JPS5739585A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- JPS5739585A JPS5739585A JP55115057A JP11505780A JPS5739585A JP S5739585 A JPS5739585 A JP S5739585A JP 55115057 A JP55115057 A JP 55115057A JP 11505780 A JP11505780 A JP 11505780A JP S5739585 A JPS5739585 A JP S5739585A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- mounting frame
- electrode leading
- detecting elements
- leading wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- -1 e.g. Substances 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
PURPOSE:To facilitate the wiring of an electrode leading wire even when detecting elements are mounted in a high density by providing an electrode leading wiring plate separately from the mounting frame of the detectors. CONSTITUTION:A mounting frame 1 containing detecting elements 2 is interposed between two through hole substrates 3, 4, an Au deposited film 23 of the positive electrode of the detecting element 2 is mounted via the conductor film 31 of the substrate 3 with an electrode leading wire 32, and an auminum deposited film 24 of negative electrode of the detecting element 2 is mounted via the conductor film 41 of the substrate 4 with an electrode leading wire 42. A containing mounting frame is formed of insulator, e.g., glass epoxy resin. A conductive buffer, e.g., conductive rubber or the like is interposed between the wiring plate and the electrode faces of the respective detecting elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55115057A JPS5739585A (en) | 1980-08-21 | 1980-08-21 | Semiconductor radiation detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55115057A JPS5739585A (en) | 1980-08-21 | 1980-08-21 | Semiconductor radiation detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5739585A true JPS5739585A (en) | 1982-03-04 |
Family
ID=14653099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55115057A Pending JPS5739585A (en) | 1980-08-21 | 1980-08-21 | Semiconductor radiation detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5739585A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59109981U (en) * | 1983-01-17 | 1984-07-24 | 横河電機株式会社 | Multi-channel radiation detector |
JPS60121372U (en) * | 1984-01-24 | 1985-08-16 | シチズン時計株式会社 | Mobile TV with electronic camera |
WO2000072381A1 (en) * | 1999-05-25 | 2000-11-30 | Commissariat A L'energie Atomique | Detector with semiconductor for detecting ionizing radiation |
JP2001318155A (en) * | 2000-02-28 | 2001-11-16 | Toshiba Corp | Radiation detector and x-ray ct device |
-
1980
- 1980-08-21 JP JP55115057A patent/JPS5739585A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59109981U (en) * | 1983-01-17 | 1984-07-24 | 横河電機株式会社 | Multi-channel radiation detector |
JPS60121372U (en) * | 1984-01-24 | 1985-08-16 | シチズン時計株式会社 | Mobile TV with electronic camera |
WO2000072381A1 (en) * | 1999-05-25 | 2000-11-30 | Commissariat A L'energie Atomique | Detector with semiconductor for detecting ionizing radiation |
FR2794287A1 (en) * | 1999-05-25 | 2000-12-01 | Commissariat Energie Atomique | SEMICONDUCTOR DETECTOR FOR THE DETECTION OF IONIZING RADIATION |
EP1188187B1 (en) * | 1999-05-25 | 2009-09-23 | Commissariat A L'energie Atomique | Semiconductor detector for detecting ionizing radiation |
JP2001318155A (en) * | 2000-02-28 | 2001-11-16 | Toshiba Corp | Radiation detector and x-ray ct device |
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