JPS55111151A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS55111151A
JPS55111151A JP1882379A JP1882379A JPS55111151A JP S55111151 A JPS55111151 A JP S55111151A JP 1882379 A JP1882379 A JP 1882379A JP 1882379 A JP1882379 A JP 1882379A JP S55111151 A JPS55111151 A JP S55111151A
Authority
JP
Japan
Prior art keywords
electronic circuit
circuit parts
supporting member
parts
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1882379A
Other languages
Japanese (ja)
Inventor
Kenichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1882379A priority Critical patent/JPS55111151A/en
Publication of JPS55111151A publication Critical patent/JPS55111151A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase mounting density and have diversified circuit function possible by fixing the 1st electronic circuit parts on a supporting member and then fixing the 2nd electronic circuit parts on the 1st electronic circuit parts. CONSTITUTION:On the supporting member such as gold-plated lead 2 and the like, electronic circuit parts 3, including semiconductor integrated circuit or active element or passive element etc., is fixed using bonding agent layer 5. Besides, 1 piece or more of electronic circuit parts 13... are fixed on the above using non-conductive bonding agent layer 15 and the like. Then, electrode 6 and lead 2 are properly connected with a gold wire, and they are sealed with resin 1. A wiring substrate made of alumina-ceramic and the like may be used as a supporting member, and may be sealed with cancase. Connecting material is not limited to wires. As above-mentioned, mounting density of electronic parts on ceramic substrate and printed substrate is increased and diversified function can be accomplished.
JP1882379A 1979-02-20 1979-02-20 Integrated circuit device Pending JPS55111151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1882379A JPS55111151A (en) 1979-02-20 1979-02-20 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1882379A JPS55111151A (en) 1979-02-20 1979-02-20 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS55111151A true JPS55111151A (en) 1980-08-27

Family

ID=11982275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1882379A Pending JPS55111151A (en) 1979-02-20 1979-02-20 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55111151A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5012323A (en) * 1989-11-20 1991-04-30 Micron Technology, Inc. Double-die semiconductor package having a back-bonded die and a face-bonded die interconnected on a single leadframe
US6096576A (en) * 1997-09-02 2000-08-01 Silicon Light Machines Method of producing an electrical interface to an integrated circuit device having high density I/O count
US6839479B2 (en) 2002-05-29 2005-01-04 Silicon Light Machines Corporation Optical switch
US7036058B1 (en) 1999-11-09 2006-04-25 Sharp Kabushiki Kaisha Semiconductor device having integrally sealed integrated circuit chips arranged for improved testing
US7046420B1 (en) 2003-02-28 2006-05-16 Silicon Light Machines Corporation MEM micro-structures and methods of making the same
US7232709B2 (en) 2003-12-19 2007-06-19 Nitto Denko Corporation Process for producing a semiconductor device
WO2009046030A1 (en) * 2007-10-03 2009-04-09 Micron Technology, Inc. Stackable integrated circuit package
US7772040B2 (en) 2006-09-12 2010-08-10 Nitto Denko Corporation Manufacturing method of semiconductor device, adhesive sheet used therein, and semiconductor device obtained thereby
US7880222B2 (en) 2005-02-21 2011-02-01 Sanken Electric Co., Ltd. Semiconductor device having plural regions and elements with varying areas depending on the region
US7998552B2 (en) 2007-03-01 2011-08-16 Nittok Denko Corporation Dicing/die bonding film
US8236614B2 (en) 2005-02-21 2012-08-07 Nitto Denko Corporation Semiconductor device manufacturing method
US8592260B2 (en) 2009-06-26 2013-11-26 Nitto Denko Corporation Process for producing a semiconductor device
US8841757B2 (en) 2010-11-18 2014-09-23 Nitto Denko Corporation Film for the backside of flip-chip type semiconductor, dicing tape-integrated film for the backside of semiconductor, method of manufacturing film for the backside of flip-chip type semiconductor, and semiconductor device
US9153556B2 (en) 2006-09-08 2015-10-06 Nitto Denko Corporation Adhesive sheet for manufacturing semiconductor device, manufacturing method of semiconductor device using the sheet, and semiconductor device obtained by the method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081475A (en) * 1973-11-19 1975-07-02
JPS51102566A (en) * 1975-03-07 1976-09-10 Suwa Seikosha Kk Shusekikairo
JPS5339068A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Semiconductor device
JPS5326867B2 (en) * 1974-11-11 1978-08-04

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081475A (en) * 1973-11-19 1975-07-02
JPS5326867B2 (en) * 1974-11-11 1978-08-04
JPS51102566A (en) * 1975-03-07 1976-09-10 Suwa Seikosha Kk Shusekikairo
JPS5339068A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Semiconductor device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5012323A (en) * 1989-11-20 1991-04-30 Micron Technology, Inc. Double-die semiconductor package having a back-bonded die and a face-bonded die interconnected on a single leadframe
US6096576A (en) * 1997-09-02 2000-08-01 Silicon Light Machines Method of producing an electrical interface to an integrated circuit device having high density I/O count
US6452260B1 (en) 1997-09-02 2002-09-17 Silicon Light Machines Electrical interface to integrated circuit device having high density I/O count
US7036058B1 (en) 1999-11-09 2006-04-25 Sharp Kabushiki Kaisha Semiconductor device having integrally sealed integrated circuit chips arranged for improved testing
US6839479B2 (en) 2002-05-29 2005-01-04 Silicon Light Machines Corporation Optical switch
US7046420B1 (en) 2003-02-28 2006-05-16 Silicon Light Machines Corporation MEM micro-structures and methods of making the same
US7232709B2 (en) 2003-12-19 2007-06-19 Nitto Denko Corporation Process for producing a semiconductor device
US8236614B2 (en) 2005-02-21 2012-08-07 Nitto Denko Corporation Semiconductor device manufacturing method
EP1852911B1 (en) * 2005-02-21 2019-01-02 Sanken Electric Co., Ltd. Semiconductor device
US7880222B2 (en) 2005-02-21 2011-02-01 Sanken Electric Co., Ltd. Semiconductor device having plural regions and elements with varying areas depending on the region
US9153556B2 (en) 2006-09-08 2015-10-06 Nitto Denko Corporation Adhesive sheet for manufacturing semiconductor device, manufacturing method of semiconductor device using the sheet, and semiconductor device obtained by the method
US7772040B2 (en) 2006-09-12 2010-08-10 Nitto Denko Corporation Manufacturing method of semiconductor device, adhesive sheet used therein, and semiconductor device obtained thereby
US8278153B2 (en) 2006-09-12 2012-10-02 Nitto Denko Corporation Manufacturing method of semiconductor device, adhesive sheet used therein, and semiconductor device obtained thereby
US8975759B2 (en) 2006-09-12 2015-03-10 Nitto Denko Corporation Manufacturing method of semiconductor device, adhesive sheet used therein, and semiconductor device obtained thereby
US7998552B2 (en) 2007-03-01 2011-08-16 Nittok Denko Corporation Dicing/die bonding film
WO2009046030A1 (en) * 2007-10-03 2009-04-09 Micron Technology, Inc. Stackable integrated circuit package
US8592260B2 (en) 2009-06-26 2013-11-26 Nitto Denko Corporation Process for producing a semiconductor device
US8841757B2 (en) 2010-11-18 2014-09-23 Nitto Denko Corporation Film for the backside of flip-chip type semiconductor, dicing tape-integrated film for the backside of semiconductor, method of manufacturing film for the backside of flip-chip type semiconductor, and semiconductor device

Similar Documents

Publication Publication Date Title
JPS55111151A (en) Integrated circuit device
MY109101A (en) Thin type semiconductor device, module structure using the device and method of mounting the device on board
JPS5553446A (en) Container of electronic component
JPS5779652A (en) Resin-sealed semiconductor device
JPS57181144A (en) Semiconductor device
JPS5571052A (en) Substrate for semiconductor device
JPS5511361A (en) Semiconductor fitting construction
CA2017080A1 (en) Semiconductor device package structure
JPS6455291A (en) Integrated circuit device
JPS6464298A (en) Hybrid integrated circuit
EP0081419A3 (en) High lead count hermetic mass bond integrated circuit carrier
JPS54102971A (en) Semiconductor device
JPS5710951A (en) Semiconductor device
JPS6444027A (en) Semiconductor device
JPS57104247A (en) Terminal block with resistor
JPS556862A (en) Mounting structure of ic for electronic timepiece
JPS5789276A (en) Photo chip element
JPS641262A (en) Electronic device and manufacture thereof
JPS57147262A (en) Manufacture of semiconductor device
JPS54158863A (en) Integrated-circuit device
JPS5290975A (en) Electronic wristwatch
JPS5287363A (en) Semiconductor packdage
JPS5613762A (en) Semiconductor integrated circuit
JPS6410651A (en) Packaging method for hybrid integrated circuit
JPS56120147A (en) Integrated circuit package