JPS6486527A - Ccb tape carrier - Google Patents

Ccb tape carrier

Info

Publication number
JPS6486527A
JPS6486527A JP62244626A JP24462687A JPS6486527A JP S6486527 A JPS6486527 A JP S6486527A JP 62244626 A JP62244626 A JP 62244626A JP 24462687 A JP24462687 A JP 24462687A JP S6486527 A JPS6486527 A JP S6486527A
Authority
JP
Japan
Prior art keywords
ccb
bumps
electrodes
leads
5mum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62244626A
Other languages
Japanese (ja)
Inventor
Mamoru Onda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP62244626A priority Critical patent/JPS6486527A/en
Publication of JPS6486527A publication Critical patent/JPS6486527A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

PURPOSE:To reduce an electrode interval, and to obtain a CCB tape carrier, to which an IC element having a high degree of integration can be mounted, by constituting a conductive electric circuit onto a long-sized tape consisting of an insulating organic film and providing a protruding section of a specific thickness to an IC-element fitting section in order to load the IC element through a CCB method. CONSTITUTION:A conductive electric circuit 3 is composed of a large number of leads 5, and protruding section bumps 6 for setting up electrodes for an IC element are shaped at the noses of the leads 5 through a CCB method. Sections in which the upper sections of the leads 5 are coated with copper, gold, silver, tin, aluminum, nickel and these alloy and the like as metals capable of accurately joining with the electrodes for the IC element 7 may be employed as the bumps 6. 5mum or more is preferable as coating thickness thereof. 5mum or less is not used because the bumps 6 are not brought into contact with the electrodes for the IC element.
JP62244626A 1987-09-29 1987-09-29 Ccb tape carrier Pending JPS6486527A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62244626A JPS6486527A (en) 1987-09-29 1987-09-29 Ccb tape carrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62244626A JPS6486527A (en) 1987-09-29 1987-09-29 Ccb tape carrier

Publications (1)

Publication Number Publication Date
JPS6486527A true JPS6486527A (en) 1989-03-31

Family

ID=17121549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62244626A Pending JPS6486527A (en) 1987-09-29 1987-09-29 Ccb tape carrier

Country Status (1)

Country Link
JP (1) JPS6486527A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172039A (en) * 1995-12-18 1997-06-30 Nec Corp Semiconductor device
JPH09252023A (en) * 1996-03-15 1997-09-22 Nec Corp Semiconductor device and its manufacturing method
US9030001B2 (en) 2010-07-27 2015-05-12 Tessera, Inc. Microelectronic packages with nanoparticle joining
US9496236B2 (en) 2010-12-10 2016-11-15 Tessera, Inc. Interconnect structure
US9633971B2 (en) 2015-07-10 2017-04-25 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US10535626B2 (en) 2015-07-10 2020-01-14 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6262551A (en) * 1985-09-13 1987-03-19 グ−ルド・インコ−ポレイテツド Carrier and manufacturing thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6262551A (en) * 1985-09-13 1987-03-19 グ−ルド・インコ−ポレイテツド Carrier and manufacturing thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172039A (en) * 1995-12-18 1997-06-30 Nec Corp Semiconductor device
JPH09252023A (en) * 1996-03-15 1997-09-22 Nec Corp Semiconductor device and its manufacturing method
US9030001B2 (en) 2010-07-27 2015-05-12 Tessera, Inc. Microelectronic packages with nanoparticle joining
US9397063B2 (en) 2010-07-27 2016-07-19 Tessera, Inc. Microelectronic packages with nanoparticle joining
US9496236B2 (en) 2010-12-10 2016-11-15 Tessera, Inc. Interconnect structure
US9633971B2 (en) 2015-07-10 2017-04-25 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US9818713B2 (en) 2015-07-10 2017-11-14 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US10535626B2 (en) 2015-07-10 2020-01-14 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US10892246B2 (en) 2015-07-10 2021-01-12 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US11710718B2 (en) 2015-07-10 2023-07-25 Adeia Semiconductor Technologies Llc Structures and methods for low temperature bonding using nanoparticles

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