JPS56158485A - Schottky barrier diode element - Google Patents
Schottky barrier diode elementInfo
- Publication number
- JPS56158485A JPS56158485A JP6176980A JP6176980A JPS56158485A JP S56158485 A JPS56158485 A JP S56158485A JP 6176980 A JP6176980 A JP 6176980A JP 6176980 A JP6176980 A JP 6176980A JP S56158485 A JPS56158485 A JP S56158485A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- layer
- grid
- barrier metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 abstract 6
- 239000002184 metal Substances 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 230000008646 thermal stress Effects 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To alleviate thermal stress and to obtain a high power element by providing a grid shaped insulating layer or a layer whose conductive type is different from that of a substrate on the surface of the substrate, and linking a barrier metal which is independently formed in each grid with a flexible conductive layer. CONSTITUTION:P<+> diffused layers 14 (or insulating films) which are to become guard rings are provided on the surface of the N type Si substrate 2 in a grid shape. For example, a W electrode 3 which is to become the barrier metal is formed on each grid on the substrate surface so that metals are separated to each other. Then, after, e.g., an Ag film 15 is formed on the entire surface, a bump electrode 7 comprising, e.g., Ag is formed in the region on the substrate, on which the W electrode 3 is not provided, and the part other than electrode 7 is covered with an insulator. On the bottom surface of the substrate, an electrode comprising an Au layer 8 and an Ag layer 9 is provided. Thereafter, sealing is performed by glass, and a double heat sink type element is obtained. Since the barrier metal 3 is divided into the relatively small areas, the thermal stress can be reduced to a low value even though total area of the barriers is large, and the element suitable for the high power can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6176980A JPS56158485A (en) | 1980-05-12 | 1980-05-12 | Schottky barrier diode element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6176980A JPS56158485A (en) | 1980-05-12 | 1980-05-12 | Schottky barrier diode element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56158485A true JPS56158485A (en) | 1981-12-07 |
Family
ID=13180640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6176980A Pending JPS56158485A (en) | 1980-05-12 | 1980-05-12 | Schottky barrier diode element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56158485A (en) |
-
1980
- 1980-05-12 JP JP6176980A patent/JPS56158485A/en active Pending
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