JPS57169272A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57169272A
JPS57169272A JP56053899A JP5389981A JPS57169272A JP S57169272 A JPS57169272 A JP S57169272A JP 56053899 A JP56053899 A JP 56053899A JP 5389981 A JP5389981 A JP 5389981A JP S57169272 A JPS57169272 A JP S57169272A
Authority
JP
Japan
Prior art keywords
type
region
layer
junction
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56053899A
Other languages
Japanese (ja)
Inventor
Moriya Nakahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56053899A priority Critical patent/JPS57169272A/en
Publication of JPS57169272A publication Critical patent/JPS57169272A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To allow substrate and source side potentials to be kept at the same potential, by providing the eutectic region of metal and semiconductor on at least one part of the junction of an n type and a p type layers. CONSTITUTION:A p type Si layer 22, p<+> type layer 36, n<+> type source region 29, n<+> type drain region 30, field insulating region 24, gate insulating layer 25 and gate electrode 26 are provided on a sapphire substrate 21 with Al ion is implanted in the neighborhood of the p-n junction under the source region 29 to form the Al-Si eutectic region 37 by heat treatment at 600 deg.C. Thus, the ohmic junction of an n type and p type layer is allowed with substrate and source side potentials kept at the same potential.
JP56053899A 1981-04-10 1981-04-10 Semiconductor device and manufacture thereof Pending JPS57169272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56053899A JPS57169272A (en) 1981-04-10 1981-04-10 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56053899A JPS57169272A (en) 1981-04-10 1981-04-10 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57169272A true JPS57169272A (en) 1982-10-18

Family

ID=12955562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56053899A Pending JPS57169272A (en) 1981-04-10 1981-04-10 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57169272A (en)

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