JPS5558573A - Manufacture of mis semiconductor device - Google Patents
Manufacture of mis semiconductor deviceInfo
- Publication number
- JPS5558573A JPS5558573A JP13054278A JP13054278A JPS5558573A JP S5558573 A JPS5558573 A JP S5558573A JP 13054278 A JP13054278 A JP 13054278A JP 13054278 A JP13054278 A JP 13054278A JP S5558573 A JPS5558573 A JP S5558573A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- layer
- source
- polycrystalline
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce the gate electrode resistance and connect the gate electrode directly to the source and the drain, by adding an impurity of the same conduction type as the source and the drain to No. 1-layer of the gate electrode of multi-layer structure, consisting of heat resisting metal, such as Mo, or its Si compound sandwiched by polycrystalline Si film.
CONSTITUTION: By the CVD method, polycrystalline Si 3 containing p is formed on p-type Si. By the sputtering method, Mo and polycrystalline Si are formed continuously. Thus, by preventing the oxidation of the Mo surface, a good ohmic contact is formed. After selective etching, by using a multi-layer mask consisting of films 3∼5, injecting ions, and operating heat treatment,n-type source 6 and drain 7 are formed. Film 5 is made conducting. At this time, n-layer 8 is produced, and the gate electrode and source 6 are directly connected. Next, by covering this with PSG 9 and opening a window, Al electrodes 10, 11 are provided. Mo, W, Cr or their Si compounds may be used, besides Mo. By this method, the gate electrode wiring resistance can be reduced and an MIS device directly connected to the diffusion layer of the surface of a base plate can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13054278A JPS5558573A (en) | 1978-10-25 | 1978-10-25 | Manufacture of mis semiconductor device |
DE19792943150 DE2943150A1 (en) | 1978-10-25 | 1979-10-25 | MIS device prodn. with protective film formation on exposed metal - before doping by heat treatment of prevent oxidn. and evapn. of metal, pref. molybdenum |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13054278A JPS5558573A (en) | 1978-10-25 | 1978-10-25 | Manufacture of mis semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5558573A true JPS5558573A (en) | 1980-05-01 |
Family
ID=15036767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13054278A Pending JPS5558573A (en) | 1978-10-25 | 1978-10-25 | Manufacture of mis semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5558573A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041259A (en) * | 1983-08-17 | 1985-03-04 | Nec Corp | Semiconductor device |
JPS6057975A (en) * | 1983-09-09 | 1985-04-03 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51115659A (en) * | 1975-03-12 | 1976-10-12 | Commissariat Energie Atomique | Method of and device for electrically connecting componets one to the other |
JPS5315771A (en) * | 1976-07-28 | 1978-02-14 | Hitachi Ltd | Production of mis semiconductor device |
-
1978
- 1978-10-25 JP JP13054278A patent/JPS5558573A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51115659A (en) * | 1975-03-12 | 1976-10-12 | Commissariat Energie Atomique | Method of and device for electrically connecting componets one to the other |
JPS5315771A (en) * | 1976-07-28 | 1978-02-14 | Hitachi Ltd | Production of mis semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041259A (en) * | 1983-08-17 | 1985-03-04 | Nec Corp | Semiconductor device |
JPS6057975A (en) * | 1983-09-09 | 1985-04-03 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
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