JPS57121260A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57121260A JPS57121260A JP56006380A JP638081A JPS57121260A JP S57121260 A JPS57121260 A JP S57121260A JP 56006380 A JP56006380 A JP 56006380A JP 638081 A JP638081 A JP 638081A JP S57121260 A JPS57121260 A JP S57121260A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- pellet
- radiated
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Abstract
PURPOSE:To improve the heat radiation of a heat sink layer in a semiconductor device by providing the layer having good thermal conductivity in a substrate. CONSTITUTION:A pellet 12 is mounted on a substrate 10 made of a ceramic material, the electrode of the pellet 12 is connected via a wire 14 to the conductor part on the substrate 10, and a cap 16 is placed on the pellet 12 and is hermetically seated. On the other hand, the substrate 10 is formed in a shape that a copper layer 20 is sandwiched in the intermediate. In this manner, the heat produced from the pellet 12 is radiated from the direction of the cap 16, is further radiated directly externally through the layer 10 from the upper half of the substrate 10, and is radiated externally via the lower half of the substrate 10 from the layer 20, thereby improving the heat radiation of the heat sink layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56006380A JPS57121260A (en) | 1981-01-21 | 1981-01-21 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56006380A JPS57121260A (en) | 1981-01-21 | 1981-01-21 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57121260A true JPS57121260A (en) | 1982-07-28 |
Family
ID=11636768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56006380A Pending JPS57121260A (en) | 1981-01-21 | 1981-01-21 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57121260A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5946050A (en) * | 1982-09-09 | 1984-03-15 | Narumi China Corp | Ceramic package for semiconductor |
JPS61287128A (en) * | 1985-06-13 | 1986-12-17 | Matsushita Electric Works Ltd | Chip carrier for electron element |
JPS62130544A (en) * | 1985-11-30 | 1987-06-12 | Ibiden Co Ltd | Substrate for placing semiconductor |
-
1981
- 1981-01-21 JP JP56006380A patent/JPS57121260A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5946050A (en) * | 1982-09-09 | 1984-03-15 | Narumi China Corp | Ceramic package for semiconductor |
JPS6327860B2 (en) * | 1982-09-09 | 1988-06-06 | Narumi China Corp | |
JPS61287128A (en) * | 1985-06-13 | 1986-12-17 | Matsushita Electric Works Ltd | Chip carrier for electron element |
JPH053744B2 (en) * | 1985-06-13 | 1993-01-18 | Matsushita Electric Works Ltd | |
JPS62130544A (en) * | 1985-11-30 | 1987-06-12 | Ibiden Co Ltd | Substrate for placing semiconductor |
JPH058865B2 (en) * | 1985-11-30 | 1993-02-03 | Ibiden Co Ltd |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1030540A (en) | Improvements in and relating to semi-conductor diodes | |
US3715636A (en) | Silicon carbide lamp mounted on a ceramic of poor thermal conductivity | |
EP0013314A3 (en) | Semiconductor device comprising a cooling body | |
JPS57121260A (en) | Semiconductor device | |
JPS55103746A (en) | Semiconductor power supply assembly and method of manufacturing same | |
JPS57166051A (en) | Semiconductor device | |
US3828229A (en) | Leadless semiconductor device for high power use | |
JPS57112055A (en) | Integrated circuit package | |
JPS56148857A (en) | Semiconductor device | |
JPS55165658A (en) | Semiconductor device | |
CA2017080A1 (en) | Semiconductor device package structure | |
JPS54128277A (en) | Semiconductor device | |
JPS5629352A (en) | Resin-sealed semiconductor device | |
JPS56146263A (en) | Manufacture of semiconductor device | |
JPS56115550A (en) | Manufacture of semiconductor device | |
JPS5455172A (en) | Semiconductor device | |
JPS6489546A (en) | Semiconductor device | |
JPS57121239A (en) | Semiconductor device | |
JPS56125849A (en) | Semiconductor device | |
JPS57120386A (en) | Semiconductor device | |
JPS56133853A (en) | Package for integrating circuit | |
JPS56142659A (en) | Semiconductor device | |
JPS5730357A (en) | Semiconductor device | |
ES475731A1 (en) | Temperature sensor | |
JPS5486276A (en) | Resin mold type semiconductor device |