JPS5730357A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5730357A
JPS5730357A JP10556580A JP10556580A JPS5730357A JP S5730357 A JPS5730357 A JP S5730357A JP 10556580 A JP10556580 A JP 10556580A JP 10556580 A JP10556580 A JP 10556580A JP S5730357 A JPS5730357 A JP S5730357A
Authority
JP
Japan
Prior art keywords
main electrode
electrode
surround
control electrode
chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10556580A
Other languages
Japanese (ja)
Inventor
Takashi Shimamura
Hideaki Sannomiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP10556580A priority Critical patent/JPS5730357A/en
Publication of JPS5730357A publication Critical patent/JPS5730357A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Abstract

PURPOSE:To enable to flow a large current in a semiconductor device by so conductively disposing a plurality of semiconductor chips on a lower main electrode as to surround an upper main electrode and so forming a control electrode on the lower main electrode as to surround a plurality of the chips. CONSTITUTION:An upper main electrode 1 is secured at the center to an insulating base 3 for the main electrode, a lead conductor 4 for the main electrode is provided on the upper main electrode 1, semiconductor chips 5 are so disposed at the prescribed interval on the periphery at the center as to surround it, and are connected with metallic wires 6 therebetween. A control electrode 7 is concentrically formed with the upper main electrode 1 on the outer periphery of the chips 5, while an insulating base 8 for the control electrode is interposed between the control electrode 7 and the main electrode 2, the chip 5 and the control electrode 7 are connected with metallic wires 9, and lead conductors 10 are formed on the electrode 7. Thus, it is electrically and mechanically balanced, and a large current can be flowed.
JP10556580A 1980-07-31 1980-07-31 Semiconductor device Pending JPS5730357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10556580A JPS5730357A (en) 1980-07-31 1980-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10556580A JPS5730357A (en) 1980-07-31 1980-07-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5730357A true JPS5730357A (en) 1982-02-18

Family

ID=14411050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10556580A Pending JPS5730357A (en) 1980-07-31 1980-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5730357A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3910470A1 (en) * 1988-03-31 1989-10-19 Toshiba Kawasaki Kk POWER SEMICONDUCTOR SWITCH DEVICE
US5498907A (en) * 1993-04-29 1996-03-12 Allied Signal Inc. Interconnection arrangement for power semiconductor switching devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3910470A1 (en) * 1988-03-31 1989-10-19 Toshiba Kawasaki Kk POWER SEMICONDUCTOR SWITCH DEVICE
US5006921A (en) * 1988-03-31 1991-04-09 Kabushiki Kaisha Toshiba Power semiconductor switching apparatus with heat sinks
US5498907A (en) * 1993-04-29 1996-03-12 Allied Signal Inc. Interconnection arrangement for power semiconductor switching devices

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