FR2426977A1 - Circuit integre a forte densite d'integration et son procede de realisation - Google Patents

Circuit integre a forte densite d'integration et son procede de realisation

Info

Publication number
FR2426977A1
FR2426977A1 FR7913400A FR7913400A FR2426977A1 FR 2426977 A1 FR2426977 A1 FR 2426977A1 FR 7913400 A FR7913400 A FR 7913400A FR 7913400 A FR7913400 A FR 7913400A FR 2426977 A1 FR2426977 A1 FR 2426977A1
Authority
FR
France
Prior art keywords
integrated circuit
high integration
integration density
substrate
obtaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7913400A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of FR2426977A1 publication Critical patent/FR2426977A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H01L29/41783—Raised source or drain electrodes self aligned with the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)

Abstract

Circuit intégré à forte densité d'intégration et son obtention. Le procédé d'obtention applique des techniques de réalisation de grilles et de contacts auto-alignés de transistors à effet de champ et de lignes conductrices en Si polycristallin diffusées dans le substrat et aussi formées sur de l'oxyde de champ isolant formé sur le substrat. Les tolérances d'alignement des masques sont augmentées et rendues moins rigoureuses. L'utilisation dans les couches successives de matières à caractéristiques différentes de décapage permet, sans masquage, l'oxydation sélective des seules parties voulues et l'enlèvement discontinu d'une matière choisie. Application : réalisation de circuits intégrés de densité et de fiabilité accrues, contenant par exemple des transistors destinés à des mémoires vives ou mortes
FR7913400A 1978-05-26 1979-05-25 Circuit integre a forte densite d'integration et son procede de realisation Withdrawn FR2426977A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/909,886 US4277881A (en) 1978-05-26 1978-05-26 Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines

Publications (1)

Publication Number Publication Date
FR2426977A1 true FR2426977A1 (fr) 1979-12-21

Family

ID=25427983

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913400A Withdrawn FR2426977A1 (fr) 1978-05-26 1979-05-25 Circuit integre a forte densite d'integration et son procede de realisation

Country Status (7)

Country Link
US (1) US4277881A (fr)
JP (1) JPS54155782A (fr)
DE (1) DE2921010A1 (fr)
FR (1) FR2426977A1 (fr)
GB (3) GB2106713B (fr)
IT (1) IT1117188B (fr)
NL (1) NL7904120A (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587711A (en) * 1978-05-26 1986-05-13 Rockwell International Corporation Process for high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
DE3176909D1 (en) * 1980-03-06 1988-11-17 Toshiba Kk Semiconductor device using component insulation and method of manufacturing the same
US4317276A (en) * 1980-06-12 1982-03-02 Teletype Corporation Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer
US4335502A (en) * 1980-10-01 1982-06-22 Standard Microsystems Corporation Method for manufacturing metal-oxide silicon devices
US4517729A (en) * 1981-07-27 1985-05-21 American Microsystems, Incorporated Method for fabricating MOS device with self-aligned contacts
JPS58175846A (ja) * 1982-04-08 1983-10-15 Toshiba Corp 半導体装置の製造方法
CA1198226A (fr) * 1982-06-01 1985-12-17 Eliezer Kinsbron Methode de fabrication d'un dispositif semiconducteur
FR2548453B1 (fr) * 1983-06-30 1986-11-14 Thomson Csf Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence
JPS6091673A (ja) * 1983-10-25 1985-05-23 Toshiba Corp 半導体装置の製造方法
US4584761A (en) * 1984-05-15 1986-04-29 Digital Equipment Corporation Integrated circuit chip processing techniques and integrated chip produced thereby
US4658496A (en) * 1984-11-29 1987-04-21 Siemens Aktiengesellschaft Method for manufacturing VLSI MOS-transistor circuits
JPS61150369A (ja) * 1984-12-25 1986-07-09 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
CA1258320A (fr) * 1985-04-01 1989-08-08 Madhukar B. Vora Petite cellule de memoire vive sans contacts
US5739569A (en) * 1991-05-15 1998-04-14 Texas Instruments Incorporated Non-volatile memory cell with oxide and nitride tunneling layers
US5384278A (en) * 1992-11-16 1995-01-24 United Technologies Corporation Tight control of resistor valves in a SRAM process
JP3653107B2 (ja) * 1994-03-14 2005-05-25 株式会社ルネサステクノロジ 半導体装置およびその製造方法
AU2050900A (en) 1998-12-28 2000-07-31 Fairchild Semiconductor Corporation Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
DE102006051490B4 (de) * 2006-10-31 2010-07-08 Advanced Micro Devices, Inc., Sunnyvale Technik zur Herstellung einer Passivierungsschicht ohne ein Abschlussmetall
TWI364798B (en) * 2008-03-21 2012-05-21 Vanguard Int Semiconduct Corp Semiconductor device and fabrication method thereof
US11276641B1 (en) * 2020-01-06 2022-03-15 Rockwell Collins, Inc. Conformal multi-plane material deposition

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837935A (en) * 1971-05-28 1974-09-24 Fujitsu Ltd Semiconductor devices and method of manufacturing the same
JPS4859781A (fr) * 1971-11-25 1973-08-22
JPS50148084A (fr) * 1974-05-20 1975-11-27
US3899373A (en) * 1974-05-20 1975-08-12 Ibm Method for forming a field effect device
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
US4021789A (en) * 1975-09-29 1977-05-03 International Business Machines Corporation Self-aligned integrated circuits
JPS605065B2 (ja) * 1976-01-30 1985-02-08 株式会社日立製作所 Ｍｉｓ形半導体装置の製造方法
US4151537A (en) * 1976-03-10 1979-04-24 Gte Laboratories Incorporated Gate electrode for MNOS semiconductor memory device
NL7604986A (nl) * 1976-05-11 1977-11-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting, en inrichting vervaardigd door toe- passing van de werkwijze.
JPS6041470B2 (ja) * 1976-06-15 1985-09-17 松下電器産業株式会社 半導体装置の製造方法
US4057820A (en) * 1976-06-29 1977-11-08 Westinghouse Electric Corporation Dual gate MNOS transistor

Also Published As

Publication number Publication date
GB2100926B (en) 1983-05-25
GB2021860A (en) 1979-12-05
NL7904120A (nl) 1979-11-28
GB2021860B (en) 1983-04-27
IT1117188B (it) 1986-02-17
GB2100926A (en) 1983-01-06
JPS54155782A (en) 1979-12-08
IT7949184A0 (it) 1979-05-25
GB2106713A (en) 1983-04-13
US4277881A (en) 1981-07-14
DE2921010A1 (de) 1979-11-29
GB2106713B (en) 1983-08-10

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