KR850000786A - 반도체 장치 및 그 제조방법 - Google Patents
반도체 장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR850000786A KR850000786A KR1019840003649A KR840003649A KR850000786A KR 850000786 A KR850000786 A KR 850000786A KR 1019840003649 A KR1019840003649 A KR 1019840003649A KR 840003649 A KR840003649 A KR 840003649A KR 850000786 A KR850000786 A KR 850000786A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- well
- substrate
- diffusion
- conductivity
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims 5
- 238000009792 diffusion process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 238000007654 immersion Methods 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000001556 precipitation Methods 0.000 claims 1
- 238000005389 semiconductor device fabrication Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/082—Ion implantation FETs/COMs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Led Devices (AREA)
- Element Separation (AREA)
- Motor And Converter Starters (AREA)
- Burglar Alarm Systems (AREA)
- Glass Compositions (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도부터 제4도까지는 반도체 장치의 연속적인 제조단계들을 도시한 것으로, 도시된 반도체 장치의 구성품들은 실제 크기로 도시한 것은 아니다.
Claims (9)
- 한 도전성 타입의 우물을 기판 내에 형성하기 위해 다른 도전성 타입의 기판 내에 상기 한 도전성 타입의 불순물의 제1예비용착 및 확산 몰입 단계와, 채널 조운에 의해 우물 경계선으로 부터 분리되는 지역을 형성하기 위해 불순물의 제2예비용착 및 확산 몰입단계를 가지는 반도체 장치 제조 공정에 있어서, 상기 제1확산 몰입 단계동안에, 실리콘 질화물층(26)으로 피복되는 폴리 실리콘 게이트(5,6) 밑에 채널조운이 형성되는 것을 특징으로 하는 반도체 장치 제조 방법.
- 제1항에 있어서, 상기 제1확산 유입단계는 질소 분위기에서 수행되는 것을 특징으로 하 반도체 장치 제조장치.
- 제1항에 있어서, 상기 지역(20)은 상기 기판(1)을 덮는 산화물층(2)내의 동일 구멍(10)을 통해 상기 우물(14) 내에 형성되고, 그 지역(20)은 또 반도체 장치의 소오스를 형성하고, 반도체장치의 드레인은 기판(1)에 의해 형성되는 것을 특징으로 하 반도체 장치 제조방법.
- 제3항에 있어서, 상기한 및 다른 도전성 타입의 재료는 각각 P 및 N타입 도전성을 지닌 것을 특징으로 반도체장치 제조 방법.
- 제1항에 있어서, 상기 우물(14) 및 지역(24)은 기판(1)을 덮은 산화물층(2)내의 서로 다른 개구(10,9)들을 통해 형성되고, 반도체 장치의 소오스를 지역(24)이 형성하고, 드레인을 상기 우물(14)이 형성하는 것을 특징으로 하는 반도체 장치 제조방법.
- 제5항에 있어서, 상기한 및 다른 도전성 타입재료는 P타입 도전성을 지닌 것을 특징으로 하 반도체 장치 제조방법.
- 제1항에 있어서, 상기 예비용착 단계는 이온 이식으로 수행되는 것을 특징으로 하 반도체 장치 제조방법.
- 상기 어느 한 항중 어느 한 항에 있어서의 제조 방법을 따라 만든 반도체 제조장치.
- 제8항에 있어서, 고전압 스위치를 구성하는 반도체 장치.※참고사항:최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE2/60137A BE897139A (nl) | 1983-06-27 | 1983-06-27 | Proces voor het maken van een halfgeleider-inrichting en inrichting hierdoor verkregen |
BE260137 | 1983-06-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR850000786A true KR850000786A (ko) | 1985-03-09 |
Family
ID=3865640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840003649A KR850000786A (ko) | 1983-06-27 | 1984-06-27 | 반도체 장치 및 그 제조방법 |
Country Status (19)
Country | Link |
---|---|
US (1) | US4626293A (ko) |
EP (1) | EP0133204B1 (ko) |
JP (1) | JPH0646658B2 (ko) |
KR (1) | KR850000786A (ko) |
AT (1) | ATE29625T1 (ko) |
AU (1) | AU570692B2 (ko) |
BE (1) | BE897139A (ko) |
BR (1) | BR8402888A (ko) |
CA (1) | CA1223975A (ko) |
DD (1) | DD223018A5 (ko) |
DE (1) | DE3466132D1 (ko) |
ES (1) | ES533752A0 (ko) |
HU (1) | HUT37690A (ko) |
PH (1) | PH20860A (ko) |
PT (1) | PT78788B (ko) |
RO (1) | RO91547B (ko) |
TR (1) | TR21961A (ko) |
YU (1) | YU111284A (ko) |
ZA (1) | ZA844513B (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0256033B1 (en) * | 1986-01-22 | 1993-06-02 | Hughes Aircraft Company | Optical analog data processing systems for handling bipolar and complex data |
JPH0812918B2 (ja) * | 1986-03-28 | 1996-02-07 | 株式会社東芝 | 半導体装置の製造方法 |
JP2604777B2 (ja) * | 1988-01-18 | 1997-04-30 | 松下電工株式会社 | 二重拡散型電界効果半導体装置の製法 |
CH677558A5 (en) * | 1988-11-28 | 1991-05-31 | Asea Brown Boveri | Deep PN junction mfr. for power thyristor - has oxide layer applied to surface of substrate during diffusion process for doping material |
US5668026A (en) * | 1996-03-06 | 1997-09-16 | Megamos Corporation | DMOS fabrication process implemented with reduced number of masks |
JP3292038B2 (ja) * | 1996-05-31 | 2002-06-17 | 日産自動車株式会社 | 物入れ |
JP3111947B2 (ja) | 1997-10-28 | 2000-11-27 | 日本電気株式会社 | 半導体装置、その製造方法 |
JP3487844B1 (ja) * | 2002-06-14 | 2004-01-19 | 沖電気工業株式会社 | Ldmos型半導体装置の製造方法 |
US8821141B2 (en) | 2011-06-23 | 2014-09-02 | Wright Flow Technologies Limited | Positive displacement rotary pumps with improved cooling |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3919008A (en) * | 1970-12-02 | 1975-11-11 | Hitachi Ltd | Method of manufacturing MOS type semiconductor devices |
US3895390A (en) * | 1972-11-24 | 1975-07-15 | Signetics Corp | Metal oxide semiconductor structure and method using ion implantation |
US3996655A (en) * | 1973-12-14 | 1976-12-14 | Texas Instruments Incorporated | Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product |
US3909320A (en) * | 1973-12-26 | 1975-09-30 | Signetics Corp | Method for forming MOS structure using double diffusion |
US4038107B1 (en) * | 1975-12-03 | 1995-04-18 | Samsung Semiconductor Tele | Method for making transistor structures |
JPS52143759A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Impurity diffusion method for semiconductor wafers |
US4179312A (en) * | 1977-12-08 | 1979-12-18 | International Business Machines Corporation | Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition |
DE2802838A1 (de) * | 1978-01-23 | 1979-08-16 | Siemens Ag | Mis-feldeffekttransistor mit kurzer kanallaenge |
JPS5533037A (en) * | 1978-08-28 | 1980-03-08 | Nec Corp | Manufacture of semiconductor device |
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
JPS5556663A (en) * | 1978-10-23 | 1980-04-25 | Nec Corp | Insulating-gate type field-effect transistor |
DE2947350A1 (de) * | 1979-11-23 | 1981-05-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie |
US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
JPS57170570A (en) * | 1981-04-15 | 1982-10-20 | Toshiba Corp | Field effect transistor |
GB2100507A (en) * | 1981-06-17 | 1982-12-22 | Philips Electronic Associated | Method of making a vertical igfet |
JPH0635272B2 (ja) * | 1988-04-04 | 1994-05-11 | 日産車体株式会社 | ステアリング支持装置 |
GB9120299D0 (en) * | 1991-09-24 | 1991-11-06 | Latchways Ltd | Load attachment system, and parts fittings therefor |
-
1983
- 1983-06-27 BE BE2/60137A patent/BE897139A/nl not_active IP Right Cessation
-
1984
- 1984-06-08 HU HU842231A patent/HUT37690A/hu unknown
- 1984-06-12 EP EP84106690A patent/EP0133204B1/de not_active Expired
- 1984-06-12 DE DE8484106690T patent/DE3466132D1/de not_active Expired
- 1984-06-12 AT AT84106690T patent/ATE29625T1/de not_active IP Right Cessation
- 1984-06-13 BR BR8402888A patent/BR8402888A/pt unknown
- 1984-06-14 ZA ZA844513A patent/ZA844513B/xx unknown
- 1984-06-20 CA CA000456985A patent/CA1223975A/en not_active Expired
- 1984-06-25 AU AU29828/84A patent/AU570692B2/en not_active Ceased
- 1984-06-25 PT PT78788A patent/PT78788B/pt unknown
- 1984-06-26 YU YU01112/84A patent/YU111284A/xx unknown
- 1984-06-26 PH PH30889A patent/PH20860A/en unknown
- 1984-06-26 DD DD84264524A patent/DD223018A5/de unknown
- 1984-06-26 TR TR21961A patent/TR21961A/xx unknown
- 1984-06-26 RO RO115007A patent/RO91547B/ro unknown
- 1984-06-27 KR KR1019840003649A patent/KR850000786A/ko not_active Application Discontinuation
- 1984-06-27 JP JP59131194A patent/JPH0646658B2/ja not_active Expired - Lifetime
- 1984-06-27 ES ES533752A patent/ES533752A0/es active Granted
- 1984-06-27 US US06/625,723 patent/US4626293A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
PH20860A (en) | 1987-05-19 |
ATE29625T1 (de) | 1987-09-15 |
US4626293A (en) | 1986-12-02 |
DD223018A5 (de) | 1985-05-29 |
RO91547A (ro) | 1987-04-30 |
JPH0646658B2 (ja) | 1994-06-15 |
DE3466132D1 (en) | 1987-10-15 |
BE897139A (nl) | 1983-12-27 |
ES8604369A1 (es) | 1985-12-01 |
BR8402888A (pt) | 1985-05-21 |
PT78788A (en) | 1984-07-01 |
EP0133204B1 (de) | 1987-09-09 |
ES533752A0 (es) | 1985-12-01 |
RO91547B (ro) | 1987-05-01 |
TR21961A (tr) | 1985-12-10 |
PT78788B (en) | 1986-07-11 |
YU111284A (en) | 1988-02-29 |
JPS6042869A (ja) | 1985-03-07 |
AU570692B2 (en) | 1988-03-24 |
ZA844513B (en) | 1985-02-27 |
EP0133204A1 (de) | 1985-02-20 |
CA1223975A (en) | 1987-07-07 |
HUT37690A (en) | 1986-01-23 |
AU2982884A (en) | 1985-01-03 |
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