KR850000786A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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KR850000786A
KR850000786A KR1019840003649A KR840003649A KR850000786A KR 850000786 A KR850000786 A KR 850000786A KR 1019840003649 A KR1019840003649 A KR 1019840003649A KR 840003649 A KR840003649 A KR 840003649A KR 850000786 A KR850000786 A KR 850000786A
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semiconductor device
well
substrate
diffusion
conductivity
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KR1019840003649A
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스콜스 구스타프
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더블유. 제이. 바움
인터내쇼날 스탠다드 일렉트릭 코오포레이숀
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Publication of KR850000786A publication Critical patent/KR850000786A/ko

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2252Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314Inorganic layers
    • H01L21/318Inorganic layers composed of nitrides
    • H01L21/3185Inorganic layers composed of nitrides of siliconnitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816Lateral DMOS transistors, i.e. LDMOS transistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/082Ion implantation FETs/COMs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Led Devices (AREA)
  • Element Separation (AREA)
  • Motor And Converter Starters (AREA)
  • Burglar Alarm Systems (AREA)
  • Glass Compositions (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

내용 없음.

Description

반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도부터 제4도까지는 반도체 장치의 연속적인 제조단계들을 도시한 것으로, 도시된 반도체 장치의 구성품들은 실제 크기로 도시한 것은 아니다.

Claims (9)

  1. 한 도전성 타입의 우물을 기판 내에 형성하기 위해 다른 도전성 타입의 기판 내에 상기 한 도전성 타입의 불순물의 제1예비용착 및 확산 몰입 단계와, 채널 조운에 의해 우물 경계선으로 부터 분리되는 지역을 형성하기 위해 불순물의 제2예비용착 및 확산 몰입단계를 가지는 반도체 장치 제조 공정에 있어서, 상기 제1확산 몰입 단계동안에, 실리콘 질화물층(26)으로 피복되는 폴리 실리콘 게이트(5,6) 밑에 채널조운이 형성되는 것을 특징으로 하는 반도체 장치 제조 방법.
  2. 제1항에 있어서, 상기 제1확산 유입단계는 질소 분위기에서 수행되는 것을 특징으로 하 반도체 장치 제조장치.
  3. 제1항에 있어서, 상기 지역(20)은 상기 기판(1)을 덮는 산화물층(2)내의 동일 구멍(10)을 통해 상기 우물(14) 내에 형성되고, 그 지역(20)은 또 반도체 장치의 소오스를 형성하고, 반도체장치의 드레인은 기판(1)에 의해 형성되는 것을 특징으로 하 반도체 장치 제조방법.
  4. 제3항에 있어서, 상기한 및 다른 도전성 타입의 재료는 각각 P 및 N타입 도전성을 지닌 것을 특징으로 반도체장치 제조 방법.
  5. 제1항에 있어서, 상기 우물(14) 및 지역(24)은 기판(1)을 덮은 산화물층(2)내의 서로 다른 개구(10,9)들을 통해 형성되고, 반도체 장치의 소오스를 지역(24)이 형성하고, 드레인을 상기 우물(14)이 형성하는 것을 특징으로 하는 반도체 장치 제조방법.
  6. 제5항에 있어서, 상기한 및 다른 도전성 타입재료는 P타입 도전성을 지닌 것을 특징으로 하 반도체 장치 제조방법.
  7. 제1항에 있어서, 상기 예비용착 단계는 이온 이식으로 수행되는 것을 특징으로 하 반도체 장치 제조방법.
  8. 상기 어느 한 항중 어느 한 항에 있어서의 제조 방법을 따라 만든 반도체 제조장치.
  9. 제8항에 있어서, 고전압 스위치를 구성하는 반도체 장치.
    ※참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019840003649A 1983-06-27 1984-06-27 반도체 장치 및 그 제조방법 KR850000786A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
BE2/60137A BE897139A (nl) 1983-06-27 1983-06-27 Proces voor het maken van een halfgeleider-inrichting en inrichting hierdoor verkregen
BE260137 1983-06-27

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KR850000786A true KR850000786A (ko) 1985-03-09

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US (1) US4626293A (ko)
EP (1) EP0133204B1 (ko)
JP (1) JPH0646658B2 (ko)
KR (1) KR850000786A (ko)
AT (1) ATE29625T1 (ko)
AU (1) AU570692B2 (ko)
BE (1) BE897139A (ko)
BR (1) BR8402888A (ko)
CA (1) CA1223975A (ko)
DD (1) DD223018A5 (ko)
DE (1) DE3466132D1 (ko)
ES (1) ES533752A0 (ko)
HU (1) HUT37690A (ko)
PH (1) PH20860A (ko)
PT (1) PT78788B (ko)
RO (1) RO91547B (ko)
TR (1) TR21961A (ko)
YU (1) YU111284A (ko)
ZA (1) ZA844513B (ko)

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JPH0812918B2 (ja) * 1986-03-28 1996-02-07 株式会社東芝 半導体装置の製造方法
JP2604777B2 (ja) * 1988-01-18 1997-04-30 松下電工株式会社 二重拡散型電界効果半導体装置の製法
CH677558A5 (en) * 1988-11-28 1991-05-31 Asea Brown Boveri Deep PN junction mfr. for power thyristor - has oxide layer applied to surface of substrate during diffusion process for doping material
US5668026A (en) * 1996-03-06 1997-09-16 Megamos Corporation DMOS fabrication process implemented with reduced number of masks
JP3292038B2 (ja) * 1996-05-31 2002-06-17 日産自動車株式会社 物入れ
JP3111947B2 (ja) 1997-10-28 2000-11-27 日本電気株式会社 半導体装置、その製造方法
JP3487844B1 (ja) * 2002-06-14 2004-01-19 沖電気工業株式会社 Ldmos型半導体装置の製造方法
US8821141B2 (en) 2011-06-23 2014-09-02 Wright Flow Technologies Limited Positive displacement rotary pumps with improved cooling

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Publication number Publication date
PH20860A (en) 1987-05-19
ATE29625T1 (de) 1987-09-15
US4626293A (en) 1986-12-02
DD223018A5 (de) 1985-05-29
RO91547A (ro) 1987-04-30
JPH0646658B2 (ja) 1994-06-15
DE3466132D1 (en) 1987-10-15
BE897139A (nl) 1983-12-27
ES8604369A1 (es) 1985-12-01
BR8402888A (pt) 1985-05-21
PT78788A (en) 1984-07-01
EP0133204B1 (de) 1987-09-09
ES533752A0 (es) 1985-12-01
RO91547B (ro) 1987-05-01
TR21961A (tr) 1985-12-10
PT78788B (en) 1986-07-11
YU111284A (en) 1988-02-29
JPS6042869A (ja) 1985-03-07
AU570692B2 (en) 1988-03-24
ZA844513B (en) 1985-02-27
EP0133204A1 (de) 1985-02-20
CA1223975A (en) 1987-07-07
HUT37690A (en) 1986-01-23
AU2982884A (en) 1985-01-03

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