NL7904120A - Werkwijze voor het vervaardigen van geintegreerde schakelingen en aldus vervaardigde schakeling. - Google Patents
Werkwijze voor het vervaardigen van geintegreerde schakelingen en aldus vervaardigde schakeling.Info
- Publication number
- NL7904120A NL7904120A NL7904120AA NL7904120A NL7904120A NL 7904120 A NL7904120 A NL 7904120A NL 7904120A A NL7904120A A NL 7904120AA NL 7904120 A NL7904120 A NL 7904120A NL 7904120 A NL7904120 A NL 7904120A
- Authority
- NL
- Netherlands
- Prior art keywords
- circuits
- manufactured
- manufacturing integrated
- integrated circuits
- circuits manufactured
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/909,886 US4277881A (en) | 1978-05-26 | 1978-05-26 | Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7904120A true NL7904120A (nl) | 1979-11-28 |
Family
ID=25427983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7904120AA NL7904120A (nl) | 1978-05-26 | 1979-05-25 | Werkwijze voor het vervaardigen van geintegreerde schakelingen en aldus vervaardigde schakeling. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4277881A (xx) |
JP (1) | JPS54155782A (xx) |
DE (1) | DE2921010A1 (xx) |
FR (1) | FR2426977A1 (xx) |
GB (3) | GB2106713B (xx) |
IT (1) | IT1117188B (xx) |
NL (1) | NL7904120A (xx) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4587711A (en) * | 1978-05-26 | 1986-05-13 | Rockwell International Corporation | Process for high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
DE3176909D1 (en) * | 1980-03-06 | 1988-11-17 | Toshiba Kk | Semiconductor device using component insulation and method of manufacturing the same |
US4317276A (en) * | 1980-06-12 | 1982-03-02 | Teletype Corporation | Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer |
US4335502A (en) * | 1980-10-01 | 1982-06-22 | Standard Microsystems Corporation | Method for manufacturing metal-oxide silicon devices |
US4517729A (en) * | 1981-07-27 | 1985-05-21 | American Microsystems, Incorporated | Method for fabricating MOS device with self-aligned contacts |
JPS58175846A (ja) * | 1982-04-08 | 1983-10-15 | Toshiba Corp | 半導体装置の製造方法 |
CA1198226A (en) * | 1982-06-01 | 1985-12-17 | Eliezer Kinsbron | Method for manufacturing a semiconductor device |
FR2548453B1 (fr) * | 1983-06-30 | 1986-11-14 | Thomson Csf | Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence |
JPS6091673A (ja) * | 1983-10-25 | 1985-05-23 | Toshiba Corp | 半導体装置の製造方法 |
US4584761A (en) * | 1984-05-15 | 1986-04-29 | Digital Equipment Corporation | Integrated circuit chip processing techniques and integrated chip produced thereby |
US4658496A (en) * | 1984-11-29 | 1987-04-21 | Siemens Aktiengesellschaft | Method for manufacturing VLSI MOS-transistor circuits |
JPS61150369A (ja) * | 1984-12-25 | 1986-07-09 | Toshiba Corp | 読み出し専用半導体記憶装置およびその製造方法 |
CA1258320A (en) * | 1985-04-01 | 1989-08-08 | Madhukar B. Vora | Small contactless ram cell |
US5739569A (en) * | 1991-05-15 | 1998-04-14 | Texas Instruments Incorporated | Non-volatile memory cell with oxide and nitride tunneling layers |
US5384278A (en) * | 1992-11-16 | 1995-01-24 | United Technologies Corporation | Tight control of resistor valves in a SRAM process |
JP3653107B2 (ja) | 1994-03-14 | 2005-05-25 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
AU2050900A (en) | 1998-12-28 | 2000-07-31 | Fairchild Semiconductor Corporation | Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage |
US7078296B2 (en) | 2002-01-16 | 2006-07-18 | Fairchild Semiconductor Corporation | Self-aligned trench MOSFETs and methods for making the same |
DE102006051490B4 (de) * | 2006-10-31 | 2010-07-08 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Herstellung einer Passivierungsschicht ohne ein Abschlussmetall |
TWI364798B (en) * | 2008-03-21 | 2012-05-21 | Vanguard Int Semiconduct Corp | Semiconductor device and fabrication method thereof |
US11276641B1 (en) * | 2020-01-06 | 2022-03-15 | Rockwell Collins, Inc. | Conformal multi-plane material deposition |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3837935A (en) * | 1971-05-28 | 1974-09-24 | Fujitsu Ltd | Semiconductor devices and method of manufacturing the same |
JPS4859781A (xx) * | 1971-11-25 | 1973-08-22 | ||
JPS50148084A (xx) * | 1974-05-20 | 1975-11-27 | ||
US3899373A (en) * | 1974-05-20 | 1975-08-12 | Ibm | Method for forming a field effect device |
US3943542A (en) * | 1974-11-06 | 1976-03-09 | International Business Machines, Corporation | High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same |
US4021789A (en) * | 1975-09-29 | 1977-05-03 | International Business Machines Corporation | Self-aligned integrated circuits |
JPS605065B2 (ja) * | 1976-01-30 | 1985-02-08 | 株式会社日立製作所 | Mis形半導体装置の製造方法 |
US4151537A (en) * | 1976-03-10 | 1979-04-24 | Gte Laboratories Incorporated | Gate electrode for MNOS semiconductor memory device |
NL7604986A (nl) * | 1976-05-11 | 1977-11-15 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleider- inrichting, en inrichting vervaardigd door toe- passing van de werkwijze. |
JPS6041470B2 (ja) * | 1976-06-15 | 1985-09-17 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US4057820A (en) * | 1976-06-29 | 1977-11-08 | Westinghouse Electric Corporation | Dual gate MNOS transistor |
-
1978
- 1978-05-26 US US05/909,886 patent/US4277881A/en not_active Expired - Lifetime
-
1979
- 1979-05-18 JP JP6212479A patent/JPS54155782A/ja active Pending
- 1979-05-23 DE DE19792921010 patent/DE2921010A1/de not_active Ceased
- 1979-05-24 GB GB08230325A patent/GB2106713B/en not_active Expired
- 1979-05-24 GB GB7918076A patent/GB2021860B/en not_active Expired
- 1979-05-24 GB GB08137755A patent/GB2100926B/en not_active Expired
- 1979-05-25 NL NL7904120AA patent/NL7904120A/xx not_active Application Discontinuation
- 1979-05-25 IT IT49184/79A patent/IT1117188B/it active
- 1979-05-25 FR FR7913400A patent/FR2426977A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE2921010A1 (de) | 1979-11-29 |
JPS54155782A (en) | 1979-12-08 |
GB2106713B (en) | 1983-08-10 |
GB2021860A (en) | 1979-12-05 |
GB2106713A (en) | 1983-04-13 |
GB2100926A (en) | 1983-01-06 |
GB2100926B (en) | 1983-05-25 |
IT7949184A0 (it) | 1979-05-25 |
GB2021860B (en) | 1983-04-27 |
US4277881A (en) | 1981-07-14 |
FR2426977A1 (fr) | 1979-12-21 |
IT1117188B (it) | 1986-02-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |