JPS5629361A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS5629361A JPS5629361A JP10531179A JP10531179A JPS5629361A JP S5629361 A JPS5629361 A JP S5629361A JP 10531179 A JP10531179 A JP 10531179A JP 10531179 A JP10531179 A JP 10531179A JP S5629361 A JPS5629361 A JP S5629361A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- gate
- film
- short channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To reduce the gate resistance and the noise of a semiconductor integrated circuit by implanting ion through an insulating film to form a channel by self-alignment to increase the transfer conductance thereof and increasing the size of a gate on the surface in short channel length state. CONSTITUTION:An N type epitaxial layer 102 is isolated with a P type layer 103 on a P type substrate 101 to form P type well 106, connecting layer 108a and base layer 108b thereon. Ions are implanted through the nitride film 104 to form low density N type layer 109 by the layers 108a, 108b. Then, the portion 109' between the film 104 and the layer 106 may become substantially short channel. The nitride film 104a on the portion 109' is retained, and N type layers 112a-112d are selectively formed by the oxide film mask. Subsequently, the nitride film 104a is removed by the oxide film mask 113 to form a shallow P<+> type surface gate layer 114. Finally, an oxide film 113' is coated thereon, and an electrode is attached thereto. Since in this configuration, short channel is formed to increase the transfer conductance and the surface gate is formed widely with low resistance and with low source resistance, its thermal noise is made extremely low.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10531179A JPS5629361A (en) | 1979-08-17 | 1979-08-17 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10531179A JPS5629361A (en) | 1979-08-17 | 1979-08-17 | Manufacture of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5629361A true JPS5629361A (en) | 1981-03-24 |
JPS6231508B2 JPS6231508B2 (en) | 1987-07-08 |
Family
ID=14404150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10531179A Granted JPS5629361A (en) | 1979-08-17 | 1979-08-17 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5629361A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6451510U (en) * | 1987-09-28 | 1989-03-30 |
-
1979
- 1979-08-17 JP JP10531179A patent/JPS5629361A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6231508B2 (en) | 1987-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS551103A (en) | Semiconductor resistor | |
JPS55138267A (en) | Manufacture of semiconductor integrated circuit containing resistance element | |
JPS54100273A (en) | Memory circuit and variable resistance element | |
JPS5629361A (en) | Manufacture of semiconductor integrated circuit | |
JPS56115557A (en) | Manufacture of semiconductor device | |
JPS54156483A (en) | Non-volatile semiconductor memory device | |
JPS5642366A (en) | Manufacture of semiconductor device | |
JPS54141585A (en) | Semiconductor integrated circuit device | |
JPS5642367A (en) | Manufacture of bipolar integrated circuit | |
JPS5568651A (en) | Manufacturing method of semiconductor device | |
JPS57102067A (en) | Manufacture of complementary type metal oxide semiconductor | |
JPS57128957A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS5690549A (en) | Mos type semiconductor device and its manufacture | |
JPS5629344A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS5515230A (en) | Semiconductor device and its manufacturing method | |
JPS5513953A (en) | Complementary integrated circuit | |
JPS5791521A (en) | Manufacture of semiconductor device | |
JPS551179A (en) | Complementary mis integrated circuit apparatus | |
JPS5642372A (en) | Manufacture of semiconductor device | |
JPS5580333A (en) | Manufacture of mos semiconductor device | |
JPS56112742A (en) | Manufacture of semiconductor device | |
JPS55132053A (en) | Manufacture of semiconductor device | |
JPS5513947A (en) | Semiconductor integrated circuit device | |
JPS5756965A (en) | Manufacture of semiconductor device | |
JPS57184248A (en) | Manufacture of semiconductor device |