CA2052970A1 - Dispositif a supraconducteur comportant un canal d'oxyde supraconducteur extremement mince et methode de fabrication de ce dispositif - Google Patents
Dispositif a supraconducteur comportant un canal d'oxyde supraconducteur extremement mince et methode de fabrication de ce dispositifInfo
- Publication number
- CA2052970A1 CA2052970A1 CA2052970A CA2052970A CA2052970A1 CA 2052970 A1 CA2052970 A1 CA 2052970A1 CA 2052970 A CA2052970 A CA 2052970A CA 2052970 A CA2052970 A CA 2052970A CA 2052970 A1 CA2052970 A1 CA 2052970A1
- Authority
- CA
- Canada
- Prior art keywords
- superconducting
- superconductor
- oxide superconductor
- superconducting channel
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures
- H10N60/207—Field effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/702—Josephson junction present
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/703—Microelectronic device with superconducting conduction line
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2270070A JP2641975B2 (ja) | 1990-10-08 | 1990-10-08 | 超電導素子および作製方法 |
JP270070/1990 | 1990-10-08 | ||
JP2287830A JP2641976B2 (ja) | 1990-10-25 | 1990-10-25 | 超電導素子および作製方法 |
JP287830/1990 | 1990-10-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2052970A1 true CA2052970A1 (fr) | 1992-04-09 |
CA2052970C CA2052970C (fr) | 1996-07-02 |
Family
ID=26549051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002052970A Expired - Fee Related CA2052970C (fr) | 1990-10-08 | 1991-10-08 | Dispositif a supraconducteur comportant un canal d'oxyde supraconducteur extremement mince et methode de fabrication de ce dispositif |
Country Status (4)
Country | Link |
---|---|
US (2) | US5236896A (fr) |
EP (1) | EP0480814B1 (fr) |
CA (1) | CA2052970C (fr) |
DE (1) | DE69119022T2 (fr) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2051778C (fr) * | 1990-09-19 | 1997-05-06 | Takao Nakamura | Methode de fabrication d'un dispositif supraconducteur a couche d'oxyde supraconducteur d'epaisseur reduite, et dispositif supraconducteur ainsi fabrique |
US5407903A (en) * | 1990-09-28 | 1995-04-18 | Sumitomo Electric Industries, Ltd. | Superconducting device having a reduced thickness of oxide superconducting layer |
DE69124072T2 (de) * | 1990-10-31 | 1997-08-07 | Sumitomo Electric Industries | Supraleitende Schaltung und Verfahren zu ihrer Herstellung |
CA2054795C (fr) * | 1990-11-01 | 1996-08-06 | Hiroshi Inada | Dispositif a canal fait d'une couche d'oxyde supraconducteur extremement mince et sa methode de fabrication |
US5134117A (en) * | 1991-01-22 | 1992-07-28 | Biomagnetic Technologies, Inc. | High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction |
EP0591312B1 (fr) * | 1991-06-24 | 1997-08-06 | Forschungszentrum Jülich Gmbh | Pistes conductrices structurees et leur procede de fabrication |
DE69223371T2 (de) * | 1991-09-24 | 1998-06-10 | Sumitomo Electric Industries | Supraleitende Dünnschicht aus oxidisch supraleitendem Material, supraleitender Strompfad und supraleitende Einrichtung mit der supraleitenden Dünnschicht |
JP2773487B2 (ja) * | 1991-10-15 | 1998-07-09 | 日本電気株式会社 | トンネルトランジスタ |
WO1993010565A1 (fr) * | 1991-11-13 | 1993-05-27 | Seiko Epson Corporation | Element supraconducteur |
EP0545801B1 (fr) * | 1991-11-30 | 1997-03-19 | Sumitomo Electric Industries, Ltd. | Dispositif à supraconducteur avec un canal supraconducteur extrêmement mince formé d'un matériau d'oxyde supraconducteur et procédé pour sa fabrication |
EP0551033B1 (fr) * | 1991-12-10 | 1997-03-19 | Sumitomo Electric Industries, Ltd. | Dispositif supraconducteur à canal supraconducteur extrêmement mince en oxyde supraconducteur et procédé pour sa fabrication |
CA2085172C (fr) * | 1991-12-12 | 1996-07-23 | Takao Nakamura | Dispositif supraconducteur a canal d'oxyde supraconducteur extremement mince et methode de fabrication de ce dispositif |
JPH05251776A (ja) * | 1991-12-13 | 1993-09-28 | Sumitomo Electric Ind Ltd | 超電導素子およびその作製方法 |
US5552374A (en) * | 1992-04-09 | 1996-09-03 | Sumitomo Electric Industries, Ltd. | Oxide superconducting a transistor in crank-shaped configuration |
JP2822773B2 (ja) * | 1992-04-28 | 1998-11-11 | 住友電気工業株式会社 | 超電導インタフェース回路 |
CA2099640A1 (fr) * | 1992-06-24 | 1993-12-25 | Michitomo Iiyama | Dispositif supraconducteur ayant une voie supraconductrice formee d'oxyde supraconducteur et methode de fabrication connexe |
US5828079A (en) * | 1992-06-29 | 1998-10-27 | Matsushita Electric Industrial Co., Ltd. | Field-effect type superconducting device including bi-base oxide compound containing copper |
EP0973208B1 (fr) * | 1992-07-28 | 2005-04-27 | Nippon Telegraph And Telephone Corporation | Dispositif à adaptation de grille et procédé pour sa fabrication |
JPH0745880A (ja) * | 1993-07-29 | 1995-02-14 | Sumitomo Electric Ind Ltd | 絶縁体薄膜と酸化物超電導薄膜との積層膜 |
KR0148596B1 (ko) * | 1994-11-28 | 1998-10-15 | 양승택 | 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법 |
JPH08227743A (ja) * | 1995-02-20 | 1996-09-03 | Sumitomo Electric Ind Ltd | 酸化物超電導体用金属電極 |
KR100194621B1 (ko) * | 1995-12-21 | 1999-07-01 | 정선종 | 고온초전도 전계효과 소자 및 그 제조방법 |
US5994276A (en) * | 1997-09-08 | 1999-11-30 | Mcmaster University | Composite high Tc superconductor film |
US6660598B2 (en) * | 2002-02-26 | 2003-12-09 | International Business Machines Corporation | Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region |
JP2005056754A (ja) * | 2003-08-06 | 2005-03-03 | Sumitomo Electric Ind Ltd | 超電導線材およびその製造方法 |
US7553704B2 (en) * | 2005-06-28 | 2009-06-30 | Freescale Semiconductor, Inc. | Antifuse element and method of manufacture |
US20070254402A1 (en) * | 2006-04-27 | 2007-11-01 | Robert Rotzoll | Structure and fabrication of self-aligned high-performance organic fets |
US10238529B2 (en) | 2013-09-26 | 2019-03-26 | 3 West C. LLC | Ostomy bag |
US9993364B2 (en) | 2013-09-26 | 2018-06-12 | 3 West C, Llc | Ostomy bag |
US11298257B2 (en) | 2017-03-22 | 2022-04-12 | 3 West C, Llc. | Ostomy apparatuses and related methods |
DE102020112143B4 (de) | 2020-05-05 | 2022-03-17 | Lts Lohmann Therapie-Systeme Ag | Nicotin - Corona |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4751563A (en) * | 1984-11-05 | 1988-06-14 | International Business Machines, Corp. | Microminiaturized electrical interconnection device and its method of fabrication |
DE3850580T2 (de) * | 1987-01-30 | 1994-10-27 | Hitachi Ltd | Supraleiteranordnung. |
KR910002311B1 (ko) * | 1987-02-27 | 1991-04-11 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 디바이스 |
US5212150A (en) * | 1987-05-06 | 1993-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Oxide superconducting lead for interconnecting device component with a semiconductor substrate via at least one buffer layer |
US5183800A (en) * | 1987-07-15 | 1993-02-02 | Sharp Kabushiki Kaisha | Interconnection method for semiconductor device comprising a high-temperature superconductive material |
DE3876228T2 (de) * | 1988-01-15 | 1993-06-03 | Ibm | Feldeffektanordnung mit supraleitendem kanal. |
US4878094A (en) * | 1988-03-30 | 1989-10-31 | Minko Balkanski | Self-powered electronic component and manufacturing method therefor |
JP2862137B2 (ja) * | 1988-08-11 | 1999-02-24 | 古河電気工業株式会社 | 超電導トランジスタ |
US5135908A (en) * | 1989-08-07 | 1992-08-04 | The Trustees Of Columbia University In The City Of New York | Method of patterning superconducting films |
JP2913785B2 (ja) * | 1990-07-12 | 1999-06-28 | 富士通株式会社 | 半導体装置の製造方法 |
US5407903A (en) * | 1990-09-28 | 1995-04-18 | Sumitomo Electric Industries, Ltd. | Superconducting device having a reduced thickness of oxide superconducting layer |
-
1991
- 1991-10-08 DE DE69119022T patent/DE69119022T2/de not_active Expired - Fee Related
- 1991-10-08 CA CA002052970A patent/CA2052970C/fr not_active Expired - Fee Related
- 1991-10-08 US US07/771,986 patent/US5236896A/en not_active Expired - Fee Related
- 1991-10-08 EP EP91402677A patent/EP0480814B1/fr not_active Expired - Lifetime
-
1993
- 1993-04-28 US US08/053,401 patent/US5322526A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0480814B1 (fr) | 1996-04-24 |
EP0480814A2 (fr) | 1992-04-15 |
CA2052970C (fr) | 1996-07-02 |
US5322526A (en) | 1994-06-21 |
DE69119022T2 (de) | 1996-10-31 |
EP0480814A3 (en) | 1992-08-05 |
DE69119022D1 (de) | 1996-05-30 |
US5236896A (en) | 1993-08-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |