CA2052970A1 - Dispositif a supraconducteur comportant un canal d'oxyde supraconducteur extremement mince et methode de fabrication de ce dispositif - Google Patents

Dispositif a supraconducteur comportant un canal d'oxyde supraconducteur extremement mince et methode de fabrication de ce dispositif

Info

Publication number
CA2052970A1
CA2052970A1 CA2052970A CA2052970A CA2052970A1 CA 2052970 A1 CA2052970 A1 CA 2052970A1 CA 2052970 A CA2052970 A CA 2052970A CA 2052970 A CA2052970 A CA 2052970A CA 2052970 A1 CA2052970 A1 CA 2052970A1
Authority
CA
Canada
Prior art keywords
superconducting
superconductor
oxide superconductor
superconducting channel
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2052970A
Other languages
English (en)
Other versions
CA2052970C (fr
Inventor
Takao Nakamura
Hiroshi Inada
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Takao Nakamura
Hiroshi Inada
Michitomo Iiyama
Sumitomo Electric Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2270070A external-priority patent/JP2641975B2/ja
Priority claimed from JP2287830A external-priority patent/JP2641976B2/ja
Application filed by Takao Nakamura, Hiroshi Inada, Michitomo Iiyama, Sumitomo Electric Industries, Ltd. filed Critical Takao Nakamura
Publication of CA2052970A1 publication Critical patent/CA2052970A1/fr
Application granted granted Critical
Publication of CA2052970C publication Critical patent/CA2052970C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/20Permanent superconducting devices
    • H10N60/205Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207Field effect devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/70High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701Coated or thin film device, i.e. active or passive
    • Y10S505/702Josephson junction present
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/70High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701Coated or thin film device, i.e. active or passive
    • Y10S505/703Microelectronic device with superconducting conduction line
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729Growing single crystal, e.g. epitaxy, bulk

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
CA002052970A 1990-10-08 1991-10-08 Dispositif a supraconducteur comportant un canal d'oxyde supraconducteur extremement mince et methode de fabrication de ce dispositif Expired - Fee Related CA2052970C (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2270070A JP2641975B2 (ja) 1990-10-08 1990-10-08 超電導素子および作製方法
JP270070/1990 1990-10-08
JP2287830A JP2641976B2 (ja) 1990-10-25 1990-10-25 超電導素子および作製方法
JP287830/1990 1990-10-25

Publications (2)

Publication Number Publication Date
CA2052970A1 true CA2052970A1 (fr) 1992-04-09
CA2052970C CA2052970C (fr) 1996-07-02

Family

ID=26549051

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002052970A Expired - Fee Related CA2052970C (fr) 1990-10-08 1991-10-08 Dispositif a supraconducteur comportant un canal d'oxyde supraconducteur extremement mince et methode de fabrication de ce dispositif

Country Status (4)

Country Link
US (2) US5236896A (fr)
EP (1) EP0480814B1 (fr)
CA (1) CA2052970C (fr)
DE (1) DE69119022T2 (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2051778C (fr) * 1990-09-19 1997-05-06 Takao Nakamura Methode de fabrication d'un dispositif supraconducteur a couche d'oxyde supraconducteur d'epaisseur reduite, et dispositif supraconducteur ainsi fabrique
US5407903A (en) * 1990-09-28 1995-04-18 Sumitomo Electric Industries, Ltd. Superconducting device having a reduced thickness of oxide superconducting layer
DE69124072T2 (de) * 1990-10-31 1997-08-07 Sumitomo Electric Industries Supraleitende Schaltung und Verfahren zu ihrer Herstellung
CA2054795C (fr) * 1990-11-01 1996-08-06 Hiroshi Inada Dispositif a canal fait d'une couche d'oxyde supraconducteur extremement mince et sa methode de fabrication
US5134117A (en) * 1991-01-22 1992-07-28 Biomagnetic Technologies, Inc. High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction
EP0591312B1 (fr) * 1991-06-24 1997-08-06 Forschungszentrum Jülich Gmbh Pistes conductrices structurees et leur procede de fabrication
DE69223371T2 (de) * 1991-09-24 1998-06-10 Sumitomo Electric Industries Supraleitende Dünnschicht aus oxidisch supraleitendem Material, supraleitender Strompfad und supraleitende Einrichtung mit der supraleitenden Dünnschicht
JP2773487B2 (ja) * 1991-10-15 1998-07-09 日本電気株式会社 トンネルトランジスタ
WO1993010565A1 (fr) * 1991-11-13 1993-05-27 Seiko Epson Corporation Element supraconducteur
EP0545801B1 (fr) * 1991-11-30 1997-03-19 Sumitomo Electric Industries, Ltd. Dispositif à supraconducteur avec un canal supraconducteur extrêmement mince formé d'un matériau d'oxyde supraconducteur et procédé pour sa fabrication
EP0551033B1 (fr) * 1991-12-10 1997-03-19 Sumitomo Electric Industries, Ltd. Dispositif supraconducteur à canal supraconducteur extrêmement mince en oxyde supraconducteur et procédé pour sa fabrication
CA2085172C (fr) * 1991-12-12 1996-07-23 Takao Nakamura Dispositif supraconducteur a canal d'oxyde supraconducteur extremement mince et methode de fabrication de ce dispositif
JPH05251776A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導素子およびその作製方法
US5552374A (en) * 1992-04-09 1996-09-03 Sumitomo Electric Industries, Ltd. Oxide superconducting a transistor in crank-shaped configuration
JP2822773B2 (ja) * 1992-04-28 1998-11-11 住友電気工業株式会社 超電導インタフェース回路
CA2099640A1 (fr) * 1992-06-24 1993-12-25 Michitomo Iiyama Dispositif supraconducteur ayant une voie supraconductrice formee d'oxyde supraconducteur et methode de fabrication connexe
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper
EP0973208B1 (fr) * 1992-07-28 2005-04-27 Nippon Telegraph And Telephone Corporation Dispositif à adaptation de grille et procédé pour sa fabrication
JPH0745880A (ja) * 1993-07-29 1995-02-14 Sumitomo Electric Ind Ltd 絶縁体薄膜と酸化物超電導薄膜との積層膜
KR0148596B1 (ko) * 1994-11-28 1998-10-15 양승택 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
JPH08227743A (ja) * 1995-02-20 1996-09-03 Sumitomo Electric Ind Ltd 酸化物超電導体用金属電極
KR100194621B1 (ko) * 1995-12-21 1999-07-01 정선종 고온초전도 전계효과 소자 및 그 제조방법
US5994276A (en) * 1997-09-08 1999-11-30 Mcmaster University Composite high Tc superconductor film
US6660598B2 (en) * 2002-02-26 2003-12-09 International Business Machines Corporation Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region
JP2005056754A (ja) * 2003-08-06 2005-03-03 Sumitomo Electric Ind Ltd 超電導線材およびその製造方法
US7553704B2 (en) * 2005-06-28 2009-06-30 Freescale Semiconductor, Inc. Antifuse element and method of manufacture
US20070254402A1 (en) * 2006-04-27 2007-11-01 Robert Rotzoll Structure and fabrication of self-aligned high-performance organic fets
US10238529B2 (en) 2013-09-26 2019-03-26 3 West C. LLC Ostomy bag
US9993364B2 (en) 2013-09-26 2018-06-12 3 West C, Llc Ostomy bag
US11298257B2 (en) 2017-03-22 2022-04-12 3 West C, Llc. Ostomy apparatuses and related methods
DE102020112143B4 (de) 2020-05-05 2022-03-17 Lts Lohmann Therapie-Systeme Ag Nicotin - Corona

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751563A (en) * 1984-11-05 1988-06-14 International Business Machines, Corp. Microminiaturized electrical interconnection device and its method of fabrication
DE3850580T2 (de) * 1987-01-30 1994-10-27 Hitachi Ltd Supraleiteranordnung.
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
US5212150A (en) * 1987-05-06 1993-05-18 Semiconductor Energy Laboratory Co., Ltd. Oxide superconducting lead for interconnecting device component with a semiconductor substrate via at least one buffer layer
US5183800A (en) * 1987-07-15 1993-02-02 Sharp Kabushiki Kaisha Interconnection method for semiconductor device comprising a high-temperature superconductive material
DE3876228T2 (de) * 1988-01-15 1993-06-03 Ibm Feldeffektanordnung mit supraleitendem kanal.
US4878094A (en) * 1988-03-30 1989-10-31 Minko Balkanski Self-powered electronic component and manufacturing method therefor
JP2862137B2 (ja) * 1988-08-11 1999-02-24 古河電気工業株式会社 超電導トランジスタ
US5135908A (en) * 1989-08-07 1992-08-04 The Trustees Of Columbia University In The City Of New York Method of patterning superconducting films
JP2913785B2 (ja) * 1990-07-12 1999-06-28 富士通株式会社 半導体装置の製造方法
US5407903A (en) * 1990-09-28 1995-04-18 Sumitomo Electric Industries, Ltd. Superconducting device having a reduced thickness of oxide superconducting layer

Also Published As

Publication number Publication date
EP0480814B1 (fr) 1996-04-24
EP0480814A2 (fr) 1992-04-15
CA2052970C (fr) 1996-07-02
US5322526A (en) 1994-06-21
DE69119022T2 (de) 1996-10-31
EP0480814A3 (en) 1992-08-05
DE69119022D1 (de) 1996-05-30
US5236896A (en) 1993-08-17

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