IL78840A0 - Lattice-graded epilayer - Google Patents

Lattice-graded epilayer

Info

Publication number
IL78840A0
IL78840A0 IL78840A IL7884086A IL78840A0 IL 78840 A0 IL78840 A0 IL 78840A0 IL 78840 A IL78840 A IL 78840A IL 7884086 A IL7884086 A IL 7884086A IL 78840 A0 IL78840 A0 IL 78840A0
Authority
IL
Israel
Prior art keywords
epilayer
graded
lattice
graded epilayer
Prior art date
Application number
IL78840A
Original Assignee
Holobeam
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Holobeam filed Critical Holobeam
Publication of IL78840A0 publication Critical patent/IL78840A0/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
IL78840A 1985-10-17 1986-05-19 Lattice-graded epilayer IL78840A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78842685A 1985-10-17 1985-10-17

Publications (1)

Publication Number Publication Date
IL78840A0 true IL78840A0 (en) 1986-09-30

Family

ID=25144454

Family Applications (1)

Application Number Title Priority Date Filing Date
IL78840A IL78840A0 (en) 1985-10-17 1986-05-19 Lattice-graded epilayer

Country Status (4)

Country Link
EP (1) EP0243378A1 (en)
AU (1) AU6192886A (en)
IL (1) IL78840A0 (en)
WO (1) WO1987002509A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201616467A (en) * 2014-10-31 2016-05-01 中華映管股份有限公司 Curved decorative panel and curved display device manufacturing method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
US3721583A (en) * 1970-12-08 1973-03-20 Ibm Vapor phase epitaxial deposition process for forming superlattice structure
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
US3821033A (en) * 1972-08-03 1974-06-28 Ibm Method for producing flat composite semiconductor substrates
FR2225207B1 (en) * 1973-04-16 1978-04-21 Ibm
US3958263A (en) * 1973-11-12 1976-05-18 Bell Telephone Laboratories, Incorporated Stress reduction in algaas-algaasp multilayer structures
US3963538A (en) * 1974-12-17 1976-06-15 International Business Machines Corporation Two stage heteroepitaxial deposition process for GaP/Si
DE2601652C3 (en) * 1976-01-17 1979-11-08 Metallurgie Hoboken-Overpelt, Bruessel Method for the epitaxial deposition of an Am. Bv semiconductor layer on a germanium substrate with a (100) orientation
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
FR2435816A1 (en) * 1978-09-08 1980-04-04 Radiotechnique Compelec METHOD FOR PRODUCING, BY EPITAXY, A SEMICONDUCTOR DEVICE WITH MULTI-LAYERED STRUCTURE AND APPLICATION THEREOF
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy

Also Published As

Publication number Publication date
WO1987002509A1 (en) 1987-04-23
EP0243378A1 (en) 1987-11-04
AU6192886A (en) 1987-05-05

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