AU6192886A - Lattice-graded epilayers - Google Patents

Lattice-graded epilayers

Info

Publication number
AU6192886A
AU6192886A AU61928/86A AU6192886A AU6192886A AU 6192886 A AU6192886 A AU 6192886A AU 61928/86 A AU61928/86 A AU 61928/86A AU 6192886 A AU6192886 A AU 6192886A AU 6192886 A AU6192886 A AU 6192886A
Authority
AU
Australia
Prior art keywords
epilayers
graded
lattice
graded epilayers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU61928/86A
Inventor
Melvin S. Cook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Holobeam Inc
Original Assignee
Holobeam Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Holobeam Inc filed Critical Holobeam Inc
Publication of AU6192886A publication Critical patent/AU6192886A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
AU61928/86A 1985-10-17 1986-07-21 Lattice-graded epilayers Abandoned AU6192886A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78842685A 1985-10-17 1985-10-17
US788426 1985-10-17

Publications (1)

Publication Number Publication Date
AU6192886A true AU6192886A (en) 1987-05-05

Family

ID=25144454

Family Applications (1)

Application Number Title Priority Date Filing Date
AU61928/86A Abandoned AU6192886A (en) 1985-10-17 1986-07-21 Lattice-graded epilayers

Country Status (4)

Country Link
EP (1) EP0243378A1 (en)
AU (1) AU6192886A (en)
IL (1) IL78840A0 (en)
WO (1) WO1987002509A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201616467A (en) * 2014-10-31 2016-05-01 中華映管股份有限公司 Method for fabricating curved decoration plate and curved display device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
US3721583A (en) * 1970-12-08 1973-03-20 Ibm Vapor phase epitaxial deposition process for forming superlattice structure
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
US3821033A (en) * 1972-08-03 1974-06-28 Ibm Method for producing flat composite semiconductor substrates
FR2225207B1 (en) * 1973-04-16 1978-04-21 Ibm
US3958263A (en) * 1973-11-12 1976-05-18 Bell Telephone Laboratories, Incorporated Stress reduction in algaas-algaasp multilayer structures
US3963538A (en) * 1974-12-17 1976-06-15 International Business Machines Corporation Two stage heteroepitaxial deposition process for GaP/Si
DE2601652C3 (en) * 1976-01-17 1979-11-08 Metallurgie Hoboken-Overpelt, Bruessel Method for the epitaxial deposition of an Am. Bv semiconductor layer on a germanium substrate with a (100) orientation
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
FR2435816A1 (en) * 1978-09-08 1980-04-04 Radiotechnique Compelec METHOD FOR PRODUCING, BY EPITAXY, A SEMICONDUCTOR DEVICE WITH MULTI-LAYERED STRUCTURE AND APPLICATION THEREOF
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy

Also Published As

Publication number Publication date
WO1987002509A1 (en) 1987-04-23
EP0243378A1 (en) 1987-11-04
IL78840A0 (en) 1986-09-30

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