DE3581025D1 - Halbleiterlaser-vielfachanordnung. - Google Patents

Halbleiterlaser-vielfachanordnung.

Info

Publication number
DE3581025D1
DE3581025D1 DE8585306442T DE3581025T DE3581025D1 DE 3581025 D1 DE3581025 D1 DE 3581025D1 DE 8585306442 T DE8585306442 T DE 8585306442T DE 3581025 T DE3581025 T DE 3581025T DE 3581025 D1 DE3581025 D1 DE 3581025D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
multiple arrangement
laser multiple
arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585306442T
Other languages
English (en)
Inventor
Mototaka Taneya
Sadayoshi Matsui
Mitsuhiro Matsumoto
Saburo Yamamoto
Seiki Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19118984A external-priority patent/JPS6169187A/ja
Priority claimed from JP19119184A external-priority patent/JPS6169188A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3581025D1 publication Critical patent/DE3581025D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8585306442T 1984-09-12 1985-09-11 Halbleiterlaser-vielfachanordnung. Expired - Lifetime DE3581025D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19118984A JPS6169187A (ja) 1984-09-12 1984-09-12 半導体レ−ザアレイ装置
JP19119184A JPS6169188A (ja) 1984-09-12 1984-09-12 光偏向半導体レ−ザアレイ装置

Publications (1)

Publication Number Publication Date
DE3581025D1 true DE3581025D1 (de) 1991-02-07

Family

ID=26506556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585306442T Expired - Lifetime DE3581025D1 (de) 1984-09-12 1985-09-11 Halbleiterlaser-vielfachanordnung.

Country Status (3)

Country Link
US (1) US4730326A (de)
EP (1) EP0174839B1 (de)
DE (1) DE3581025D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2539368B2 (ja) * 1985-12-20 1996-10-02 株式会社日立製作所 半導体レ−ザ装置
JPS62282483A (ja) * 1986-05-30 1987-12-08 Sharp Corp 半導体レ−ザアレイ装置
JPH06103775B2 (ja) * 1987-07-31 1994-12-14 シャープ株式会社 半導体レ−ザアレイ装置
CA2011155C (en) * 1989-03-06 1994-04-19 Misuzu Sagawa Semiconductor laser device
US5576879A (en) * 1994-01-14 1996-11-19 Fuji Xerox Co., Ltd. Composite optical modulator
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6504859B1 (en) 2000-01-21 2003-01-07 Sandia Corporation Light sources based on semiconductor current filaments
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607299A (nl) * 1976-07-02 1978-01-04 Philips Nv Injektielaser.
US4255717A (en) * 1978-10-30 1981-03-10 Xerox Corporation Monolithic multi-emitting laser device
US4534033A (en) * 1981-08-25 1985-08-06 Handotal Kenkyu Shinkokai Three terminal semiconductor laser
US4603421A (en) * 1982-11-24 1986-07-29 Xerox Corporation Incoherent composite multi-emitter laser for an optical arrangement

Also Published As

Publication number Publication date
EP0174839A2 (de) 1986-03-19
EP0174839B1 (de) 1991-01-02
EP0174839A3 (en) 1987-08-12
US4730326A (en) 1988-03-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee