DE3885180D1 - Halbleiterlaser-Vielfachanordnung. - Google Patents
Halbleiterlaser-Vielfachanordnung.Info
- Publication number
- DE3885180D1 DE3885180D1 DE88306896T DE3885180T DE3885180D1 DE 3885180 D1 DE3885180 D1 DE 3885180D1 DE 88306896 T DE88306896 T DE 88306896T DE 3885180 T DE3885180 T DE 3885180T DE 3885180 D1 DE3885180 D1 DE 3885180D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser array
- array
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62188279A JPH0646668B2 (ja) | 1987-07-28 | 1987-07-28 | 半導体レ−ザアレイ素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3885180D1 true DE3885180D1 (de) | 1993-12-02 |
DE3885180T2 DE3885180T2 (de) | 1994-02-24 |
Family
ID=16220870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88306896T Expired - Fee Related DE3885180T2 (de) | 1987-07-28 | 1988-07-27 | Halbleiterlaser-Vielfachanordnung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4878223A (de) |
EP (1) | EP0301818B1 (de) |
JP (1) | JPH0646668B2 (de) |
DE (1) | DE3885180T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5206185A (en) * | 1988-12-29 | 1993-04-27 | Sharp Kabushiki Kaisha | Semiconductor laser device |
EP0395436B1 (de) * | 1989-04-28 | 1997-09-10 | Sharp Kabushiki Kaisha | Halbleiterlaser, Halbleiter-Wafer und Verfahren zur Herstellung derselben |
US5208823A (en) * | 1991-09-03 | 1993-05-04 | Applied Solar Energy Corporation | Optically isolated laser diode array |
US5877766A (en) * | 1997-08-15 | 1999-03-02 | International Business Machines Corporation | Multi-node user interface component and method thereof for use in accessing a plurality of linked records |
US20040252738A1 (en) * | 2003-01-22 | 2004-12-16 | Hill Steven E. | Light emitting diodes and planar optical lasers using IV semiconductor nanocrystals |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60245191A (ja) * | 1984-05-18 | 1985-12-04 | Sharp Corp | 単一ビ−ム形半導体レ−ザアレイ装置 |
JPS61113294A (ja) * | 1984-11-07 | 1986-05-31 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS6235689A (ja) * | 1985-08-09 | 1987-02-16 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS62115795A (ja) * | 1985-11-14 | 1987-05-27 | Matsushita Electric Ind Co Ltd | 半導体レ−ザアレイ装置 |
-
1987
- 1987-07-28 JP JP62188279A patent/JPH0646668B2/ja not_active Expired - Lifetime
-
1988
- 1988-07-26 US US07/224,558 patent/US4878223A/en not_active Expired - Lifetime
- 1988-07-27 EP EP88306896A patent/EP0301818B1/de not_active Expired - Lifetime
- 1988-07-27 DE DE88306896T patent/DE3885180T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0301818B1 (de) | 1993-10-27 |
JPH0646668B2 (ja) | 1994-06-15 |
US4878223A (en) | 1989-10-31 |
EP0301818A3 (en) | 1990-07-18 |
JPS6431491A (en) | 1989-02-01 |
DE3885180T2 (de) | 1994-02-24 |
EP0301818A2 (de) | 1989-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |