DE3880755T2 - Halbleiterlaser-vielfachanordnung. - Google Patents

Halbleiterlaser-vielfachanordnung.

Info

Publication number
DE3880755T2
DE3880755T2 DE8888306942T DE3880755T DE3880755T2 DE 3880755 T2 DE3880755 T2 DE 3880755T2 DE 8888306942 T DE8888306942 T DE 8888306942T DE 3880755 T DE3880755 T DE 3880755T DE 3880755 T2 DE3880755 T2 DE 3880755T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
multiple arrangement
laser multiple
arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888306942T
Other languages
English (en)
Other versions
DE3880755D1 (de
Inventor
Sadayoshi Matsui
Mototaka Taneya
Mitsuhiro Matsumoto
Hiroyuki Hosoba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3880755D1 publication Critical patent/DE3880755D1/de
Application granted granted Critical
Publication of DE3880755T2 publication Critical patent/DE3880755T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
DE8888306942T 1987-07-31 1988-07-28 Halbleiterlaser-vielfachanordnung. Expired - Fee Related DE3880755T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62193473A JPH06103775B2 (ja) 1987-07-31 1987-07-31 半導体レ−ザアレイ装置

Publications (2)

Publication Number Publication Date
DE3880755D1 DE3880755D1 (de) 1993-06-09
DE3880755T2 true DE3880755T2 (de) 1993-08-19

Family

ID=16308598

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888306942T Expired - Fee Related DE3880755T2 (de) 1987-07-31 1988-07-28 Halbleiterlaser-vielfachanordnung.

Country Status (4)

Country Link
US (1) US4914669A (de)
EP (1) EP0301846B1 (de)
JP (1) JPH06103775B2 (de)
DE (1) DE3880755T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283894A (ja) * 1988-05-10 1989-11-15 Sanyo Electric Co Ltd 半導体レーザ
DE69031401T2 (de) * 1989-04-28 1998-03-19 Sharp Kk Halbleiterlaser, Halbleiter-Wafer und Verfahren zur Herstellung derselben
JPH0770757B2 (ja) * 1989-10-17 1995-07-31 株式会社東芝 半導体発光素子
JP3797797B2 (ja) * 1997-08-13 2006-07-19 三菱化学株式会社 半導体発光素子の製造方法
JP3797798B2 (ja) * 1997-12-11 2006-07-19 三菱化学株式会社 半導体発光素子の製造方法
US6826224B2 (en) 2000-03-27 2004-11-30 Matsushita Electric Industrial Co., Ltd. High-power semiconductor laser array apparatus that outputs laser lights matched in wavelength and phase, manufacturing method therefor, and multi-wavelength laser emitting apparatus using such high-power semiconductor laser array apparatus
EP1143584A3 (de) 2000-03-31 2003-04-23 Matsushita Electric Industrial Co., Ltd. Vielfachhalbleiterlaser

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996492A (en) * 1975-05-28 1976-12-07 International Business Machines Corporation Two-dimensional integrated injection laser array
DE3411314A1 (de) * 1984-03-27 1985-10-03 Siemens AG, 1000 Berlin und 8000 München Laserdioden-array
US4730326A (en) * 1984-09-12 1988-03-08 Sharp Kabushiki Kaisha Semiconductor laser array device
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
JPS61296785A (ja) * 1985-06-25 1986-12-27 Sharp Corp 半導体レ−ザアレイ装置
JPH07107948B2 (ja) * 1985-12-12 1995-11-15 ゼロツクス コ−ポレ−シヨン 非コ−ヒレントな光非結合レ−ザアレイ
JPS63107183A (ja) * 1986-10-24 1988-05-12 Hitachi Ltd 半導体レ−ザ素子およびその製造方法

Also Published As

Publication number Publication date
US4914669A (en) 1990-04-03
EP0301846A3 (de) 1991-05-22
JPH06103775B2 (ja) 1994-12-14
EP0301846B1 (de) 1993-05-05
JPS6437072A (en) 1989-02-07
DE3880755D1 (de) 1993-06-09
EP0301846A2 (de) 1989-02-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee