DE69026194T2 - Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren - Google Patents

Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren

Info

Publication number
DE69026194T2
DE69026194T2 DE69026194T DE69026194T DE69026194T2 DE 69026194 T2 DE69026194 T2 DE 69026194T2 DE 69026194 T DE69026194 T DE 69026194T DE 69026194 T DE69026194 T DE 69026194T DE 69026194 T2 DE69026194 T2 DE 69026194T2
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69026194T
Other languages
English (en)
Other versions
DE69026194D1 (de
Inventor
Shozo Yuge
Hideaki Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69026194D1 publication Critical patent/DE69026194D1/de
Application granted granted Critical
Publication of DE69026194T2 publication Critical patent/DE69026194T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
DE69026194T 1989-10-16 1990-10-15 Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren Expired - Lifetime DE69026194T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1268782A JPH03129892A (ja) 1989-10-16 1989-10-16 半導体発光素子

Publications (2)

Publication Number Publication Date
DE69026194D1 DE69026194D1 (de) 1996-05-02
DE69026194T2 true DE69026194T2 (de) 1996-09-05

Family

ID=17463210

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026194T Expired - Lifetime DE69026194T2 (de) 1989-10-16 1990-10-15 Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren

Country Status (4)

Country Link
EP (1) EP0427003B1 (de)
JP (1) JPH03129892A (de)
KR (1) KR930010127B1 (de)
DE (1) DE69026194T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3124694B2 (ja) * 1995-02-15 2001-01-15 三菱電線工業株式会社 半導体発光素子
JP2008008530A (ja) * 2006-06-28 2008-01-17 Hokuetsu Denken Kk 遠赤外線乾燥装置
DE102007062050B4 (de) 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
DE102012110836A1 (de) * 2012-11-12 2014-02-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6381886A (ja) * 1986-09-25 1988-04-12 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS63124592A (ja) * 1986-11-14 1988-05-28 Nec Corp 半導体レ−ザ装置
US5034957A (en) * 1988-02-10 1991-07-23 Kabushiki Kaisha Toshiba Semiconductor laser device
JP2685209B2 (ja) * 1988-03-25 1997-12-03 株式会社東芝 半導体装置及び半導体発光装置

Also Published As

Publication number Publication date
KR930010127B1 (ko) 1993-10-14
DE69026194D1 (de) 1996-05-02
EP0427003B1 (de) 1996-03-27
JPH0572118B2 (de) 1993-10-08
JPH03129892A (ja) 1991-06-03
EP0427003A1 (de) 1991-05-15
KR910008873A (ko) 1991-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)