KR900015310A - 반도체장치와 그 제조방법 - Google Patents

반도체장치와 그 제조방법

Info

Publication number
KR900015310A
KR900015310A KR1019900003423A KR900003423A KR900015310A KR 900015310 A KR900015310 A KR 900015310A KR 1019900003423 A KR1019900003423 A KR 1019900003423A KR 900003423 A KR900003423 A KR 900003423A KR 900015310 A KR900015310 A KR 900015310A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019900003423A
Other languages
English (en)
Other versions
KR930010094B1 (ko
Inventor
다케오 마에다
마사유키 히가시조노
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900015310A publication Critical patent/KR900015310A/ko
Application granted granted Critical
Publication of KR930010094B1 publication Critical patent/KR930010094B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
KR1019900003423A 1989-03-14 1990-03-14 반도체장치와 그 제조방법 KR930010094B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61638 1989-03-14
JP1061638A JPH0817179B2 (ja) 1989-03-14 1989-03-14 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR900015310A true KR900015310A (ko) 1990-10-26
KR930010094B1 KR930010094B1 (ko) 1993-10-14

Family

ID=13176951

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003423A KR930010094B1 (ko) 1989-03-14 1990-03-14 반도체장치와 그 제조방법

Country Status (4)

Country Link
US (1) US5014106A (ko)
EP (1) EP0387836A3 (ko)
JP (1) JPH0817179B2 (ko)
KR (1) KR930010094B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226589A (ja) * 1992-02-17 1993-09-03 Mitsubishi Electric Corp Ｃ−ＢｉＣＭＯＳ型半導体装置およびその製造方法
US6570242B1 (en) * 1997-11-20 2003-05-27 Texas Instruments Incorporated Bipolar transistor with high breakdown voltage collector
EP1273042B1 (en) * 2000-03-30 2010-03-03 Nxp B.V. Semiconductor device and method of manufacturing same
TW515076B (en) * 2000-10-08 2002-12-21 Koninkl Philips Electronics Nv Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode
US6831346B1 (en) 2001-05-04 2004-12-14 Cypress Semiconductor Corp. Buried layer substrate isolation in integrated circuits

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3361832D1 (en) * 1982-04-19 1986-02-27 Matsushita Electric Ind Co Ltd Semiconductor ic and method of making the same
JPS5994861A (ja) * 1982-11-24 1984-05-31 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPS6015961A (ja) * 1983-07-08 1985-01-26 Hitachi Comput Eng Corp Ltd 半導体集積回路
JPS61245563A (ja) * 1985-04-24 1986-10-31 Hitachi Ltd バイポ−ラｃｍｏｓ半導体装置
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
DE3776454D1 (de) * 1986-08-13 1992-03-12 Siemens Ag Integrierte bipolar- und komplementaere mos-transistoren auf einem gemeinsamen substrat enthaltende schaltung und verfahren zu ihrer herstellung.

Also Published As

Publication number Publication date
JPH0817179B2 (ja) 1996-02-21
JPH02240930A (ja) 1990-09-25
US5014106A (en) 1991-05-07
EP0387836A2 (en) 1990-09-19
KR930010094B1 (ko) 1993-10-14
EP0387836A3 (en) 1992-04-29

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