DE3855551D1 - Halbleiter-Laservorrichtung und deren Herstellungsverfahren - Google Patents

Halbleiter-Laservorrichtung und deren Herstellungsverfahren

Info

Publication number
DE3855551D1
DE3855551D1 DE3855551T DE3855551T DE3855551D1 DE 3855551 D1 DE3855551 D1 DE 3855551D1 DE 3855551 T DE3855551 T DE 3855551T DE 3855551 T DE3855551 T DE 3855551T DE 3855551 D1 DE3855551 D1 DE 3855551D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3855551T
Other languages
English (en)
Other versions
DE3855551T2 (de
Inventor
Mototaka Taneya
Kosei Takahashi
Toshiro Hayakawa
Sadayoshi Matsui
Mitsuhiro Matsumoto
Hiroyuki Hosoba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3855551D1 publication Critical patent/DE3855551D1/de
Application granted granted Critical
Publication of DE3855551T2 publication Critical patent/DE3855551T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE3855551T 1987-10-08 1988-10-07 Halbleiter-Laservorrichtung und deren Herstellungsverfahren Expired - Lifetime DE3855551T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62254918A JP2558744B2 (ja) 1987-10-08 1987-10-08 半導体レーザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE3855551D1 true DE3855551D1 (de) 1996-10-24
DE3855551T2 DE3855551T2 (de) 1997-02-20

Family

ID=17271666

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855551T Expired - Lifetime DE3855551T2 (de) 1987-10-08 1988-10-07 Halbleiter-Laservorrichtung und deren Herstellungsverfahren

Country Status (4)

Country Link
US (1) US4890293A (de)
EP (1) EP0311445B1 (de)
JP (1) JP2558744B2 (de)
DE (1) DE3855551T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2634825B2 (ja) * 1987-11-20 1997-07-30 シャープ株式会社 光半導体装置
JPH0327578A (ja) * 1989-06-23 1991-02-05 Eastman Kodatsuku Japan Kk 発光ダイオ―ドアレイ
US5173912A (en) * 1991-04-02 1992-12-22 The Furukawa Electric Co., Ltd. Double-carrier confinement laser diode with quantum well active and sch structures
US5256580A (en) * 1992-04-06 1993-10-26 Motorola, Inc. Method of forming a light emitting diode
JPH0653602A (ja) * 1992-07-31 1994-02-25 Hitachi Ltd 半導体レーザ素子
US5394421A (en) * 1993-01-11 1995-02-28 Rohm Co., Ltd. Semiconductor laser device including a step electrode in a form of eaves
US5838029A (en) * 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5974069A (en) 1994-09-16 1999-10-26 Rohm Co., Ltd Semiconductor laser and manufacturing method thereof
JPH0888439A (ja) * 1994-09-16 1996-04-02 Rohm Co Ltd 半導体レーザおよびその製法
JP3432910B2 (ja) * 1994-09-28 2003-08-04 ローム株式会社 半導体レーザ
US5550854A (en) * 1994-11-29 1996-08-27 Lucent Technologies Inc. Binary stratified structures for periodically pumped semiconductor lasers
JPH11354880A (ja) * 1998-06-03 1999-12-24 Rohm Co Ltd 半導体レーザ素子およびその製造方法
JP2001230493A (ja) * 2000-02-21 2001-08-24 Sony Corp 半導体レーザ発光装置
JP2005109102A (ja) * 2003-09-30 2005-04-21 Mitsubishi Electric Corp モノリシック半導体レーザおよびその製造方法
US7221277B2 (en) * 2004-10-05 2007-05-22 Tracking Technologies, Inc. Radio frequency identification tag and method of making the same
JP2007201390A (ja) * 2005-12-28 2007-08-09 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
EP0311445B1 (de) 1996-09-18
JPH0196980A (ja) 1989-04-14
JP2558744B2 (ja) 1996-11-27
DE3855551T2 (de) 1997-02-20
EP0311445A3 (de) 1989-10-18
EP0311445A2 (de) 1989-04-12
US4890293A (en) 1989-12-26

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Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

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