DE69428835T2 - Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren - Google Patents

Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren

Info

Publication number
DE69428835T2
DE69428835T2 DE69428835T DE69428835T DE69428835T2 DE 69428835 T2 DE69428835 T2 DE 69428835T2 DE 69428835 T DE69428835 T DE 69428835T DE 69428835 T DE69428835 T DE 69428835T DE 69428835 T2 DE69428835 T2 DE 69428835T2
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428835T
Other languages
English (en)
Other versions
DE69428835D1 (de
Inventor
Yukio Shakuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13713593A external-priority patent/JP3288481B2/ja
Priority claimed from JP13713393A external-priority patent/JP3288479B2/ja
Priority claimed from JP13713493A external-priority patent/JP3288480B2/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Application granted granted Critical
Publication of DE69428835D1 publication Critical patent/DE69428835D1/de
Publication of DE69428835T2 publication Critical patent/DE69428835T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
DE69428835T 1993-06-08 1994-06-06 Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren Expired - Fee Related DE69428835T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13713593A JP3288481B2 (ja) 1993-06-08 1993-06-08 半導体発光装置の製造方法
JP13713393A JP3288479B2 (ja) 1993-06-08 1993-06-08 半導体発光装置の製造方法
JP13713493A JP3288480B2 (ja) 1993-06-08 1993-06-08 半導体発光装置の製造方法

Publications (2)

Publication Number Publication Date
DE69428835D1 DE69428835D1 (de) 2001-12-06
DE69428835T2 true DE69428835T2 (de) 2002-08-22

Family

ID=27317408

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428835T Expired - Fee Related DE69428835T2 (de) 1993-06-08 1994-06-06 Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren

Country Status (3)

Country Link
US (1) US5548127A (de)
EP (1) EP0632510B1 (de)
DE (1) DE69428835T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JP3122324B2 (ja) * 1995-02-20 2001-01-09 三菱電線工業株式会社 半導体発光素子
DE29511927U1 (de) * 1995-07-24 1997-01-09 Thera Ges Fuer Patente Lichtpolymerisationsgerät
US6888170B2 (en) * 2002-03-15 2005-05-03 Cornell Research Foundation, Inc. Highly doped III-nitride semiconductors
US6953740B2 (en) * 2002-03-15 2005-10-11 Cornell Research Foundation, Inc. Highly doped III-nitride semiconductors
JP4500516B2 (ja) * 2002-12-13 2010-07-14 三菱電機株式会社 半導体レーザ素子およびその製造方法
US7528418B2 (en) * 2006-02-24 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP5352248B2 (ja) * 2009-01-09 2013-11-27 Ｄｏｗａエレクトロニクス株式会社 窒化物半導体発光素子およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178684A (ja) * 1984-02-24 1985-09-12 Nec Corp 半導体レ−ザ
US4719497A (en) * 1984-06-15 1988-01-12 Hewlett-Packard Company High efficiency light-emitting diode
JP2656276B2 (ja) * 1988-01-22 1997-09-24 株式会社東芝 半導体発光素子
JPH03161982A (ja) * 1989-11-20 1991-07-11 Sanyo Electric Co Ltd 発光素子
JP3020542B2 (ja) * 1990-03-30 2000-03-15 株式会社東芝 半導体発光装置
JP3197042B2 (ja) * 1992-01-31 2001-08-13 株式会社東芝 半導体発光装置
JPH0783138B2 (ja) * 1993-01-29 1995-09-06 日本電気株式会社 半導体発光素子

Also Published As

Publication number Publication date
EP0632510B1 (de) 2001-10-31
US5548127A (en) 1996-08-20
EP0632510A2 (de) 1995-01-04
EP0632510A3 (de) 1995-04-12
DE69428835D1 (de) 2001-12-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee