JP4920221B2 - InP基板を有する光半導体装置 - Google Patents
InP基板を有する光半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 95
- 239000000758 substrate Substances 0.000 title claims description 83
- 230000003287 optical effect Effects 0.000 title claims description 32
- 239000010410 layer Substances 0.000 claims description 535
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- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
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Description
そのような状況の中、発明者らと国内外の幾つかの研究グループが黄色から緑色で発光する半導体デバイスを形成するための材料の候補として、InP半導体基板上に結晶成長により作製でき、かつInP基板に格子整合するMgxZnyCd1−x−ySeII−VI族化合物半導体に着目し研究開発を行ってきた(N. Dai等 Appl. Phys. Lett., 66、 2742(1995)、および、T. Morita等 J.Electron. Mater., 25、 425(1996)参照)。MgxZnyCd1−x−ySeは各組成(x、y)がy=0.47−0.37x(x=0〜0.8、y=0.47〜0.17)の関係式を満たす場合にInPに格子整合し、組成を(x=0、y=0.47)から(x=0.8、y=0.17)に変えることで禁制帯幅を2.1eVから3.6eVまで制御できるという特長を有している。
本発明ではこの課題を解決するために、第1の層、例えば、MgxZnyCd1−x−ySe結晶中に1018〜1020cm−3程度に高濃度p型ドーピングされた第2の薄膜半導体結晶層を適度な間隔で挿入し、挿入された半導体結晶全体で充分なp型キャリア濃度を得ることができた。
Claims (20)
- InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層として、次の(a)乃至(e)のうちの少なくとも一つを用いるものであり、
(a)MgZnCdSe層、
(b)MgSe層とZnCdSe層を有する超格子、
(c)BeZnCdSeを有する層、
(d)MgSe層とZnSe層とを有する超格子を用いるものであって、前記MgSe層にBe、Znの少なくとも一方を含有する場合を含み、前記ZnSe層にBe、Cd、Mgの少なくとも一つを含有する場合を含む、
(e)前記第1の層としてII−VI族材料を用い、前記II族材料にCdを有し、前記VI族材料にSを有し、かつ、この第1の層は単一の層であるか、又は超格子の層である、
前記第2の層として、ZnSeTe、ZnBeTe、ZnTe、MgZnSeTe、又はBeTe層の少なくとも一つを用いることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項1記載の光半導体装置。
- InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層としてMgZnCdSeを用い、
前記第2の層として、ZnSeTeを用いることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項3記載の光半導体装置。
- InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層としてMgSeとZnCdSeとを有する超格子を用い、
前記第2の層として、ZnSeTeを用いることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項5記載の光半導体装置。
- InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層として、BeZnCdSeを用い、
前記第2の層として、ZnSeTeを用いることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項7記載の光半導体装置。
- InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層として、MgZnCdSe、BeZnCdSeを用い、
前記第2の層として、ZnTe、ZnBeTe、MgZnSeTe又はBeTeの材料の少なくとも一つを用いることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項9記載の光半導体装置。
- InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層として、MgSe層とZnSe層とを有する超格子を用いるものであって、前記MgSe層にBe、Znの少なくとも一方を含有する場合を含み、前記ZnSe層にBe、Cd、Mgの少なくとも一つを含有する場合を含み、
前記第2の層として、ZnSeTe材料を用いることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項11記載の光半導体装置。
- InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層として、MgSe層とZnSe層とを有する超格子を用いるものであって、前記MgSe層にBe、Znの少なくとも一方を含有する場合を含み、前記ZnSe層にBe、Cd、Mgの少なくとも一つを含有する場合を含み、
前記第2の層として、ZnBeTe、ZnTe、MgZnSeTe、又はBeTe層材料のうちの少なくとも一つを用いることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項13記載の光半導体装置。
- InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層として、II−VI族材料を用い、前記II族材料にCdを有し、前記VI族材料にSを有し、かつ、この第1の層は単一の層であり、
前記第2の層として、ZnSeTe、ZnBeTe、ZnTe、MgZnSeTe、又はBeTe層材料のうちの少なくとも一つを用いることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項15記載の光半導体装
置。 - InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層として、II−VI族材料を用い、前記II族材料にCdを有し、前記VI族材料にSを有し、かつ、この第1の層は超格子の層であり、
前記第2の層として、ZnSeTe、ZnBeTe、ZnTe、MgZnSeTe、又はBeTe層材料のうちの少なくとも一つを用いることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項17記載の光半導体装置。
- InP基板上にn型クラッド層、活性層およびp型クラッド層を有し、
前記p型クラッド層は第1の層と第2の層を有し、
前記第1の層として、MgxZnyCd1−x−ySeの材料を用い、
前記第2の層として、ZnSeTe、ZnBeTe、ZnTe、MgZnSeTe、又はBeTe層材料のうちの少なくとも一つを用い、
前記MgxZnyCd1−x−ySe層の組成比(x、y)がy=0.47−0.37x(x=0〜0.8、y=0.47〜0.17)の関係式を満たす組み合わせで、組成比が(x=0、y=0.47)から(x=0.8、y=0.17)の範囲にあることを特徴とする光半導体装置。 - 前記第1の層および前記第2の層を有する層のp型キャリア濃度は1×1017cm−3以上、1×1022cm−3以下であることを特徴とする請求項19記載の光半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005256566A JP4920221B2 (ja) | 2005-09-05 | 2005-09-05 | InP基板を有する光半導体装置 |
CNB2006101089272A CN100514774C (zh) | 2005-09-05 | 2006-07-28 | 具有InP衬底的光半导体装置 |
KR1020060071437A KR20070025989A (ko) | 2005-09-05 | 2006-07-28 | InP 기판을 갖는 광 반도체 장치 |
US11/500,292 US7772586B2 (en) | 2005-09-05 | 2006-08-08 | Optical semiconductor devices on InP substrate |
EP06016562.8A EP1760850B1 (en) | 2005-09-05 | 2006-08-08 | Optical semiconductor devices on InP substrate |
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JP2005256566A JP4920221B2 (ja) | 2005-09-05 | 2005-09-05 | InP基板を有する光半導体装置 |
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US (1) | US7772586B2 (ja) |
EP (1) | EP1760850B1 (ja) |
JP (1) | JP4920221B2 (ja) |
KR (1) | KR20070025989A (ja) |
CN (1) | CN100514774C (ja) |
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JP4996869B2 (ja) * | 2006-03-20 | 2012-08-08 | 株式会社日立製作所 | 半導体レーザ |
JP5028177B2 (ja) * | 2007-07-25 | 2012-09-19 | ソニー株式会社 | 半導体素子 |
JP2009059886A (ja) | 2007-08-31 | 2009-03-19 | Hitachi Ltd | 半導体発光素子 |
JP2010045165A (ja) * | 2008-08-12 | 2010-02-25 | Sony Corp | 半導体素子 |
EP2211431A1 (de) * | 2009-01-22 | 2010-07-28 | Universität Bremen | Bragg-Spiegel mit Übergitter zur Kompensation einer Gitterfehlanpassung |
CN105161402B (zh) | 2010-04-30 | 2020-08-18 | 波士顿大学理事会 | 具有能带结构电位波动的高效紫外发光二极管 |
CN101976691B (zh) * | 2010-08-23 | 2012-11-21 | 北京工业大学 | 一种五结化合物半导体太阳能光伏电池芯片 |
WO2012154334A1 (en) * | 2011-04-06 | 2012-11-15 | International Crystal Laboratories | Radiation detector |
US8723189B1 (en) | 2012-01-06 | 2014-05-13 | Trustees Of Boston University | Ultraviolet light emitting diode structures and methods of manufacturing the same |
KR102099193B1 (ko) * | 2013-09-27 | 2020-04-09 | 인텔 코포레이션 | 실리콘 핀들 상에서의 led 구조체들의 형성 |
JP6954562B2 (ja) * | 2017-09-15 | 2021-10-27 | セイコーエプソン株式会社 | 発光装置およびその製造方法、ならびにプロジェクター |
CN109860360B (zh) * | 2018-11-29 | 2020-08-18 | 华灿光电(浙江)有限公司 | 一种氮化镓基发光二极管外延片及其制备方法 |
KR20210060706A (ko) | 2019-11-18 | 2021-05-27 | 삼성디스플레이 주식회사 | 양자점, 이를 포함하는 조성물 또는 복합체, 패턴화된 막, 및 이를 포함하는 표시 소자 |
RU2756003C1 (ru) * | 2020-11-13 | 2021-09-24 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" | Способ изготовления полупроводникового прибора |
Family Cites Families (15)
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US5081632A (en) | 1989-01-26 | 1992-01-14 | Hitachi, Ltd. | Semiconductor emitting device |
JPH03179790A (ja) * | 1989-12-08 | 1991-08-05 | Hitachi Ltd | 半導体構造体および半導体レーザ装置 |
EP0641493B1 (en) * | 1992-05-22 | 2000-06-28 | Minnesota Mining And Manufacturing Company | Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy |
JPH07142765A (ja) * | 1993-11-15 | 1995-06-02 | Hitachi Ltd | 半導体発光素子、半導体レーザ及び半導体発光素子の製造方法 |
JPH07202346A (ja) * | 1993-12-28 | 1995-08-04 | Toshiba Corp | 半導体装置の製造方法および半導体装置 |
JPH07254755A (ja) * | 1994-03-16 | 1995-10-03 | Hitachi Ltd | 半導体発光素子 |
JPH07326817A (ja) * | 1994-06-01 | 1995-12-12 | Fujitsu Ltd | 半導体発光素子 |
GB2298735A (en) * | 1995-03-08 | 1996-09-11 | Sharp Kk | Semiconductor device having a miniband |
JPH09129981A (ja) * | 1995-10-31 | 1997-05-16 | Nec Corp | 半導体発光素子 |
JP2803722B2 (ja) * | 1996-05-10 | 1998-09-24 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP2930032B2 (ja) * | 1996-09-26 | 1999-08-03 | 日本電気株式会社 | Ii−vi族化合物半導体発光素子およびその製造方法 |
JPH10112565A (ja) * | 1996-10-04 | 1998-04-28 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
US6178190B1 (en) * | 1997-08-04 | 2001-01-23 | Nec Corporation | II-VI compound semiconductor light emitting device |
US7358159B2 (en) * | 2001-04-04 | 2008-04-15 | Nippon Mining & Metals Co., Ltd. | Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
CN1431722A (zh) * | 2003-02-18 | 2003-07-23 | 华南师范大学 | Ⅲ族氮化物半导体蓝色发光器件 |
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2006
- 2006-07-28 CN CNB2006101089272A patent/CN100514774C/zh not_active Expired - Fee Related
- 2006-07-28 KR KR1020060071437A patent/KR20070025989A/ko not_active Application Discontinuation
- 2006-08-08 US US11/500,292 patent/US7772586B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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CN1929219A (zh) | 2007-03-14 |
JP2007073606A (ja) | 2007-03-22 |
KR20070025989A (ko) | 2007-03-08 |
US7772586B2 (en) | 2010-08-10 |
US20070051937A1 (en) | 2007-03-08 |
EP1760850A3 (en) | 2009-05-06 |
EP1760850A2 (en) | 2007-03-07 |
CN100514774C (zh) | 2009-07-15 |
EP1760850B1 (en) | 2013-05-22 |
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