CN101976691B - 一种五结化合物半导体太阳能光伏电池芯片 - Google Patents
一种五结化合物半导体太阳能光伏电池芯片 Download PDFInfo
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- CN101976691B CN101976691B CN2010102601423A CN201010260142A CN101976691B CN 101976691 B CN101976691 B CN 101976691B CN 2010102601423 A CN2010102601423 A CN 2010102601423A CN 201010260142 A CN201010260142 A CN 201010260142A CN 101976691 B CN101976691 B CN 101976691B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 150000001875 compounds Chemical class 0.000 title claims abstract description 11
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 21
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 4
- 238000000862 absorption spectrum Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
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- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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CN2010102601423A CN101976691B (zh) | 2010-08-23 | 2010-08-23 | 一种五结化合物半导体太阳能光伏电池芯片 |
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CN2010102601423A CN101976691B (zh) | 2010-08-23 | 2010-08-23 | 一种五结化合物半导体太阳能光伏电池芯片 |
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CN101976691A CN101976691A (zh) | 2011-02-16 |
CN101976691B true CN101976691B (zh) | 2012-11-21 |
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CN102790134A (zh) * | 2012-08-21 | 2012-11-21 | 天津三安光电有限公司 | 一种高效倒装五结太阳能电池及其制备方法 |
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US6673646B2 (en) * | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US7119271B2 (en) * | 2001-10-12 | 2006-10-10 | The Boeing Company | Wide-bandgap, lattice-mismatched window layer for a solar conversion device |
US7126052B2 (en) * | 2002-10-02 | 2006-10-24 | The Boeing Company | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices |
US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
JP4920221B2 (ja) * | 2005-09-05 | 2012-04-18 | 学校法人上智学院 | InP基板を有する光半導体装置 |
US20090078310A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells |
US20090078311A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells |
US20090188554A1 (en) * | 2008-01-25 | 2009-07-30 | Emcore Corporation | III-V Compound Semiconductor Solar Cell for Terrestrial Solar Array |
CN101728440A (zh) * | 2008-10-22 | 2010-06-09 | 诺华光谱有限公司 | 太阳能转换器和复合转换器 |
US20100122764A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
CN101478014A (zh) * | 2008-12-01 | 2009-07-08 | 苏州纳米技术与纳米仿生研究所 | 五结太阳能电池系统的分光制作方法 |
CN201956362U (zh) * | 2010-08-23 | 2011-08-31 | 北京工业大学 | 一种五结化合物半导体太阳能光伏电池芯片 |
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Address after: 528437 Zhongshan Torch Development Zone, Guangdong, one of the torch Road, No. 22 Patentee after: REDSOLAR NEW ENERGY TECHNOLOGY CO., LTD. Address before: 528437 Zhongshan Torch Development Zone, Guangdong, one of the torch Road, No. 22 Patentee before: Guangdong Ruide Xingyang Solar Technology Co., Ltd. |
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Denomination of invention: A five junction compound semiconductor solar photovoltaic cell chip Effective date of registration: 20210929 Granted publication date: 20121121 Pledgee: Industrial Bank Limited by Share Ltd. Zhongshan branch Pledgor: ZHONGSHAN DEHUA CHIP TECHNOLOGY Co.,Ltd. Registration number: Y2021980010236 |