CN105355680A - 一种晶格匹配的六结太阳能电池 - Google Patents

一种晶格匹配的六结太阳能电池 Download PDF

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CN105355680A
CN105355680A CN201510811411.3A CN201510811411A CN105355680A CN 105355680 A CN105355680 A CN 105355680A CN 201510811411 A CN201510811411 A CN 201510811411A CN 105355680 A CN105355680 A CN 105355680A
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张小宾
王雷
马涤非
刘雪珍
刘建庆
张杨
杨翠柏
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Zhongshan Dehua Chip Technology Co Ltd
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Abstract

本发明公开了一种晶格匹配的六结太阳能电池，该电池以p型Ge单晶片为衬底，在Ge衬底上依次设置有GaInAs/GaInP缓冲层、AlGaAs/GaInAs？DBR、Ga1-3xIn3xNxAs1-x子电池、AlAs/AlGaAs？DBR、Ga1-3yIn3yNyAs1-y子电池、GaInAs子电池、AlGaInAs子电池和AlGaInP子电池，其中AlGaAs/GaInAs？DBR用于反射长波光子，AlAs/AlGaAs？DBR用于反射中长波光子。本发明可以使光子被子电池二次吸收利用，提高子电池收集效率，从而提高六结太阳能电池整体的光电转换效率；同时，本发明还可以减小子电池厚度，降低电池生产成本。

Description

一种晶格匹配的六结太阳能电池
技术领域
本发明涉及太阳能光伏的技术领域，尤其是指一种晶格匹配的六结太阳能电池。
背景技术
目前，太阳能电池从技术发展历史来看，大体可以分为三大类：第一代晶硅太阳能电池、第二代薄膜太阳能电池和第三代砷化镓聚光(多结)太阳能电池。砷化镓多结太阳能电池因其转换效率明显高于晶硅电池而被广泛地应用于聚光光伏发电(CPV)系统和空间电源系统。砷化镓多结电池的主流结构是由GaInP、GaInAs和Ge子电池组成的GaInP/GaInAs/Ge三结太阳能电池，电池结构上整体保持晶格匹配，带隙组合为1.85/1.40/0.67eV。然而，对于太阳光光谱，这种三结电池的带隙组合并不是最佳的，由于GaInAs子电池和Ge子电池之间较大的带隙差距，这种结构下Ge底电池的短路电流要比中电池和顶电池的大很多，由于串联结构的电流限制原因，这种结构造成了很大一部分光子能量不能被充分转换利用，限制了电池性能的提高。
理论分析表明，半导体化合物六结太阳能电池可以优化带隙组合，提高电池的光电转换效率，但是在材料选择上必须保持晶格匹配，这样才能保证外延材料的晶体质量。近些年来，研究者发现GaInNAs四元合金材料中，通过调节In和N的组分，并保持In组分约为N组分的3倍，就能使得GaInNAs的光学带隙达到0.9～1.4eV，并且与Ge衬底(或GaAs衬底)晶格匹配。因此，基于Ge衬底可以生长得到AlGaInP/AlGaInAs/GaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/Ge六结太阳能电池，该六结电池可以通过调节各个子电池的材料参数保持晶格匹配，并可以将带隙组合优化为2.1/1.7/1.4/1.1/0.9/0.67eV，接近六结电池的最佳理论带隙组合，其地面光谱聚光效率极限可达50％以上，空间光谱极限效率可达38％以上，远远高于传统三结电池，这主要是因为六结电池可以更加充分地利用太阳光，提高电池的开路电压和填充因子。
然而，在GaInNAs材料的实际制备过程中，由于GaInNAs需要低温生长才能保证N原子的有效并入，材料中会同时引入大量的C原子，造成背景载流子浓度过高，影响少子扩散长度。此时，若GaInNAs材料层太厚，并不能形成对光生载流子的有效收集；若GaInNAs材料层太薄则造成电池吸收率太低，不能将相应波段的光子完全吸收。因此，如果在GaInNAs材料层下面插入分布式布拉格反射层(DBR，DistributedBragReflector)结构则可以有效解决该问题，降低GaInNAs子电池设计厚度。在结构设计中，可以通过调节DBR结构反射相应波段的太阳光，使初次没有被GaInNAs材料的吸收光子反射回去被二次吸收，相当于变相地增加了GaInNAs的“有效吸收厚度”，完美解决了少子扩散长度较小和吸收厚度要求之间的矛盾。另外，由于提供N原子的N源(一般是二甲基肼源)价格比一般的有机源都要高出很多，减小GaInNAs材料层厚度还可以降低电池的生产成本。
总之，这种包含GaInNAs材料和DBR结构的AlGaInP/AlGaInAs/GaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/Ge六结太阳能电池在保证晶格匹配的基础上，既可以满足六结电池带隙组合的理论设计要求，又能解决实际制备过程中GaInNAs材料少子扩散长度较小的问题，还可以节约电池的生产成本，可最大程度地发挥六结电池的优势，提高电池转换效率。
发明内容
本发明的目的在于克服现有技术的不足与缺点，提出一种晶格匹配的高效六结太阳能电池，可以提高GaInNAs子电池收集效率，增加六结电池短路电流，还可以减少GaInNAs子电池厚度，节约生产成本，最终发挥六结电池的优势，提高电池整体光电转换效率。
为实现上述目的，本发明所提供的技术方案为：一种晶格匹配的六结太阳能电池，包括有Ge衬底，所述Ge衬底为p型Ge单晶片；在所述Ge衬底上面按照层状叠加结构由下至上依次设置有GaInAs/GaInP缓冲层、AlGaAs/GaInAsDBR、Ga1-3xIn3xNxAs1-x子电池、AlAs/AlGaAsDBR、Ga1-3yIn3yNyAs1-y子电池、GaInAs子电池、AlGaInAs子电池和AlGaInP子电池；所述GaInAs/GaInP缓冲层和AlGaAs/GaInAsDBR之间通过第一隧道结连接，所述Ga1-3xIn3xNxAs1-x子电池和AlAs/AlGaAsDBR通过第二隧道结连接，所述Ga1-3yIn3yNyAs1-y子电池和GaInAs子电池通过第三隧道结连接，所述GaInAs子电池和AlGaInAs子电池通过第四隧道结连接，所述AlGaInAs子电池和AlGaInP子电池通过第五隧道结连接；其中，所述AlGaAs/GaInAsDBR用于反射长波光子，所述AlAs/AlGaAsDBR用于反射中长波光子。
所述AlGaAs/GaInAsDBR的反射波长为1250～1350nm，该AlGaAs/GaInAsDBR中AlGaAs/GaInAs组合层的对数为10～30对。
所述Ga1-3xIn3xNxAs1-x子电池中Ga1-3xIn3xNxAs1-x材料的光学带隙为0.90～0.95eV。
所述AlAs/AlGaAsDBR的反射波长为900～1100nm，该AlAs/AlGaAsDBR中AlAs/AlGaAs组合层的对数为10～30对。
所述Ga1-3yIn3yNyAs1-y子电池中Ga1-3yIn3yNyAs1-y材料的光学带隙为1.10～1.15eV。
所述GaInAs子电池中GaInAs材料的光学带隙为1.4eV。
所述AlGaInAs子电池中AlGaInAs材料的光学带隙为1.70～1.75eV。
所述AlGaInP子电池中AlGaInP材料的光学带隙为2.10～2.15eV。
本发明与现有技术相比，具有如下优点与有益效果：
本发明的关键在于将GaInNAs材料和DBR结构引入到六结太阳能电池中，采用GaInNAs材料可以保持电池整体上的晶格匹配，而在Ga1-3xIn3xNxAs1-x子电池和Ga1-3yIn3yNyAs1-y子电池下方分别插入AlGaAs/GaInAsDBR和AlAs/AlGaAsDBR，通过调节DBR结构参数，使初次没有被GaInNAs材料的吸收光子反射回去被二次吸收，相当于变相地增加了GaInNAs的“有效吸收厚度”，完美解决了GaInNAs材料少子扩散长度较小和吸收厚度要求之间的矛盾。该电池结构既可以达到六结电池的晶格匹配要求，又可以满足六结电池带隙组合的理论设计要求，又能解决实际制备过程中GaInNAs材料少子扩散长度较小的问题，还可以节约电池的生产成本，可最大程度地发挥六结电池的优势，提高电池效率。
附图说明
图1为本发明所述晶格匹配的六结太阳能电池结构示意图。
具体实施方式
下面结合具体实施例对本发明作进一步说明。
如图1所示，本实施例所述的晶格匹配的六结太阳能电池，包括有Ge衬底，所述Ge衬底为p型Ge单晶片；在所述Ge衬底上面按照层状叠加结构由下至上依次设置有GaInAs/GaInP缓冲层、AlGaAs/GaInAsDBR、Ga1-3xIn3xNxAs1-x子电池、AlAs/AlGaAsDBR、Ga1-3yIn3yNyAs1-y子电池、GaInAs子电池、AlGaInAs子电池和AlGaInP子电池；所述GaInAs/GaInP缓冲层和AlGaAs/GaInAsDBR之间通过第一隧道结连接，所述Ga1-3xIn3xNxAs1-x子电池和AlAs/AlGaAsDBR通过第二隧道结连接，所述Ga1-3yIn3yNyAs1-y子电池和GaInAs子电池通过第三隧道结连接，所述GaInAs子电池和AlGaInAs子电池通过第四隧道结连接，所述AlGaInAs子电池和AlGaInP子电池通过第五隧道结连接。
所述AlGaAs/GaInAsDBR用于反射长波光子，其反射波长为1250～1350nm，该AlGaAs/GaInAsDBR中AlGaAs/GaInAs组合层的对数为10～30对。
所述Ga1-3xIn3xNxAs1-x子电池中Ga1-3xIn3xNxAs1-x材料的光学带隙为0.90～0.95eV。
所述AlAs/AlGaAsDBR用于反射中长波光子，其反射波长为900～1100nm，该AlAs/AlGaAsDBR中AlAs/AlGaAs组合层的对数为10～30对。
所述Ga1-3yIn3yNyAs1-y子电池中Ga1-3yIn3yNyAs1-y材料的光学带隙为1.10～1.15eV。
所述GaInAs子电池中GaInAs材料的光学带隙为1.4eV。
所述AlGaInAs子电池中AlGaInAs材料的光学带隙为1.70～1.75eV。
所述AlGaInP子电池中AlGaInP材料的光学带隙为2.10～2.15eV。
下面为本实施例上述晶格匹配的六结太阳能电池的具体制备过程，其情况如下：
首先，以4英寸p型Ge单晶片为衬底，然后采用金属有机化学气相沉积技术(MOCVD)或分子束外延生长技术(MBE)在Ge衬底的上表面依次生长GaInAs/GaInP缓冲层、第一隧道结、AlGaAs/GaInAsDBR、Ga1-3xIn3xNxAs1-x子电池、第二隧道结、AlAs/AlGaAsDBR、Ga1-3yIn3yNyAs1-y子电池、第三隧道结、GaInAs子电池、第四隧道结、AlGaInAs子电池、第五隧道结和AlGaInP子电池，即可完成晶格匹配的高效六结太阳能电池的制备。
综上所述，本发明结合GaInNAs材料自身特点，并利用DBR反射层结构，在六结太阳能电池的Ga1-3xIn3xNxAs1-x子电池和Ga1-3yIn3yNyAs1-y子电池下方分别插入AlGaAs/GaInAsDBR和AlAs/AlGaAsDBR，通过调节DBR结构参数，使初次没有被GaInNAs材料的吸收光子反射回去被二次吸收，相当于变相地增加了GaInNAs的“有效吸收厚度”，这不仅可以达到晶格匹配的要求，又可以满足六结电池带隙组合的理论设计要求，还能解决实际制备过程中GaInNAs材料少子扩散长度较小的问题，并且可以节约电池的生产成本，可最大程度地发挥六结电池的优势，显著提高电池效率。总之，本发明可以更加充分地利用太阳光能量，提高多结电池的光电转换效率，值得推广。
以上所述之实施例子只为本发明之较佳实施例，并非以此限制本发明的实施范围，故凡依本发明之形状、原理所作的变化，均应涵盖在本发明的保护范围内。

Claims (8)

1.一种晶格匹配的六结太阳能电池，包括有Ge衬底，其特征在于：所述Ge衬底为p型Ge单晶片；在所述Ge衬底上面按照层状叠加结构由下至上依次设置有GaInAs/GaInP缓冲层、AlGaAs/GaInAsDBR、Ga1-3xIn3xNxAs1-x子电池、AlAs/AlGaAsDBR、Ga1-3yIn3yNyAs1-y子电池、GaInAs子电池、AlGaInAs子电池和AlGaInP子电池；所述GaInAs/GaInP缓冲层和AlGaAs/GaInAsDBR之间通过第一隧道结连接，所述Ga1-3xIn3xNxAs1-x子电池和AlAs/AlGaAsDBR通过第二隧道结连接，所述Ga1-3yIn3yNyAs1-y子电池和GaInAs子电池通过第三隧道结连接，所述GaInAs子电池和AlGaInAs子电池通过第四隧道结连接，所述AlGaInAs子电池和AlGaInP子电池通过第五隧道结连接；其中，所述AlGaAs/GaInAsDBR用于反射长波光子，所述AlAs/AlGaAsDBR用于反射中长波光子。
2.根据权利要求1所述的一种晶格匹配的六结太阳能电池，其特征在于：所述AlGaAs/GaInAsDBR的反射波长为1250～1350nm，该AlGaAs/GaInAsDBR中AlGaAs/GaInAs组合层的对数为10～30对。
3.根据权利要求1所述的一种晶格匹配的六结太阳能电池，其特征在于：所述Ga1-3xIn3xNxAs1-x子电池中Ga1-3xIn3xNxAs1-x材料的光学带隙为0.90～0.95eV。
4.根据权利要求1所述的一种晶格匹配的六结太阳能电池，其特征在于：所述AlAs/AlGaAsDBR的反射波长为900～1100nm，该AlAs/AlGaAsDBR中AlAs/AlGaAs组合层的对数为10～30对。
5.根据权利要求1所述的一种晶格匹配的六结太阳能电池，其特征在于：所述Ga1-3yIn3yNyAs1-y子电池中Ga1-3yIn3yNyAs1-y材料的光学带隙为1.10～1.15eV。
6.根据权利要求1所述的一种晶格匹配的六结太阳能电池，其特征在于：所述GaInAs子电池中GaInAs材料的光学带隙为1.4eV。
7.根据权利要求1所述的一种晶格匹配的六结太阳能电池，其特征在于：所述AlGaInAs子电池中AlGaInAs材料的光学带隙为1.70～1.75eV。
8.根据权利要求1所述的一种晶格匹配的六结太阳能电池，其特征在于：所述AlGaInP子电池中AlGaInP材料的光学带隙为2.10～2.15eV。
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CN106206849A (zh) * 2016-08-24 2016-12-07 中山德华芯片技术有限公司 应用于含dbr结构六结太阳能电池制备的温度监控方法
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CN112186061A (zh) * 2020-09-21 2021-01-05 浙江大学绍兴微电子研究中心 内置滤光器的叠层太阳能电池

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