CN106206849A - 应用于含dbr结构六结太阳能电池制备的温度监控方法 - Google Patents
应用于含dbr结构六结太阳能电池制备的温度监控方法 Download PDFInfo
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- CN106206849A CN106206849A CN201610716094.1A CN201610716094A CN106206849A CN 106206849 A CN106206849 A CN 106206849A CN 201610716094 A CN201610716094 A CN 201610716094A CN 106206849 A CN106206849 A CN 106206849A
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 13
- 239000000523 sample Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 230000003111 delayed effect Effects 0.000 abstract description 3
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- 230000003471 anti-radiation Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
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- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610716094.1A CN106206849B (zh) | 2016-08-24 | 2016-08-24 | 含dbr结构的六结太阳能电池制备时用的温度监控方法 |
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CN201610716094.1A CN106206849B (zh) | 2016-08-24 | 2016-08-24 | 含dbr结构的六结太阳能电池制备时用的温度监控方法 |
Publications (2)
Publication Number | Publication Date |
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CN106206849A true CN106206849A (zh) | 2016-12-07 |
CN106206849B CN106206849B (zh) | 2017-11-21 |
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CN201610716094.1A Active CN106206849B (zh) | 2016-08-24 | 2016-08-24 | 含dbr结构的六结太阳能电池制备时用的温度监控方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110634984A (zh) * | 2019-09-04 | 2019-12-31 | 中国电子科技集团公司第十八研究所 | 一种正向失配五结太阳电池 |
CN114649437A (zh) * | 2020-12-18 | 2022-06-21 | 江苏宜兴德融科技有限公司 | 一种锗多结太阳能电池及其制备方法 |
Citations (7)
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CN101478015A (zh) * | 2008-12-01 | 2009-07-08 | 苏州纳米技术与纳米仿生研究所 | 四结太阳能电池系统的分光制作方法 |
CN102354907A (zh) * | 2011-09-21 | 2012-02-15 | 中国人民解放军总装备部军械技术研究所 | 多波长一体化红外半导体激光光源 |
CN105136310A (zh) * | 2015-09-06 | 2015-12-09 | 电子科技大学 | Mocvd外延片表面温度测量的紫外测温方法及装置 |
CN204944680U (zh) * | 2015-09-06 | 2016-01-06 | 商洛学院 | 一种应用于mocvd反应室的三波长免修正在线红外监测仪 |
CN105355670A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种含dbr结构的五结太阳能电池 |
CN105355680A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种晶格匹配的六结太阳能电池 |
CN105355669A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种具有反射层的四结太阳能电池 |
-
2016
- 2016-08-24 CN CN201610716094.1A patent/CN106206849B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101478015A (zh) * | 2008-12-01 | 2009-07-08 | 苏州纳米技术与纳米仿生研究所 | 四结太阳能电池系统的分光制作方法 |
CN102354907A (zh) * | 2011-09-21 | 2012-02-15 | 中国人民解放军总装备部军械技术研究所 | 多波长一体化红外半导体激光光源 |
CN105136310A (zh) * | 2015-09-06 | 2015-12-09 | 电子科技大学 | Mocvd外延片表面温度测量的紫外测温方法及装置 |
CN204944680U (zh) * | 2015-09-06 | 2016-01-06 | 商洛学院 | 一种应用于mocvd反应室的三波长免修正在线红外监测仪 |
CN105355670A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种含dbr结构的五结太阳能电池 |
CN105355680A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种晶格匹配的六结太阳能电池 |
CN105355669A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种具有反射层的四结太阳能电池 |
Non-Patent Citations (1)
Title |
---|
张国芳: ""四结太阳能电池InGaP/GaAs/GaInAsN/Ge的设计与模拟"", 《功能材料与器件学报》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110634984A (zh) * | 2019-09-04 | 2019-12-31 | 中国电子科技集团公司第十八研究所 | 一种正向失配五结太阳电池 |
CN114649437A (zh) * | 2020-12-18 | 2022-06-21 | 江苏宜兴德融科技有限公司 | 一种锗多结太阳能电池及其制备方法 |
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CN106206849B (zh) | 2017-11-21 |
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Inventor after: Zhang Xiaobin Inventor after: Liu Xuezhen Inventor before: Yang Cuibai Inventor before: Liu Xuezhen Inventor before: Zhang Xiaobin |
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Denomination of invention: Temperature monitoring method for preparing six junction solar cell containing DBR structure Effective date of registration: 20210929 Granted publication date: 20171121 Pledgee: Industrial Bank Limited by Share Ltd. Zhongshan branch Pledgor: ZHONGSHAN DEHUA CHIP TECHNOLOGY Co.,Ltd. Registration number: Y2021980010236 |