CN110931593A - 一种晶格匹配的硅基无砷化合物四结太阳电池 - Google Patents

一种晶格匹配的硅基无砷化合物四结太阳电池 Download PDF

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CN110931593A
CN110931593A CN201911139879.7A CN201911139879A CN110931593A CN 110931593 A CN110931593 A CN 110931593A CN 201911139879 A CN201911139879 A CN 201911139879A CN 110931593 A CN110931593 A CN 110931593A
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张小宾
林凯文
王悦辉
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University of Electronic Science and Technology of China Zhongshan Institute
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Abstract

本发明公开了一种晶格匹配的硅基无砷化合物四结太阳电池，包括Si衬底，为双面抛光的p型或n型Si单晶片；在Si衬底的上表面按照层状叠加结构从上至下依次设置有GaNP子电池、GaInNP子电池和Si子电池；在Si衬底的下表面设置有InNSbP子电池；GaNP子电池和GaInNP子电池之间通过第三隧道结连接，GaInNP子电池和Si子电池之间通过第二隧道结连接，Si衬底和InNSbP子电池之间通过第一隧道结连接。本发明在降低四结电池制造成本并提高转换效率的同时，使四结电池在生产和应用过程中更加安全环保。

Description

一种晶格匹配的硅基无砷化合物四结太阳电池
技术领域
本发明涉及太阳能光伏的技术领域，尤其是指一种晶格匹配的硅基无砷化合物四结太阳电池。
背景技术
随着人类社会经济的飞速发展，人们对能源的需求增量越来越大，其中太阳能作为一种可再生绿色能源一直被人们所关注。光伏发电技术可以将太阳能直接转换为电能进行利用，已经广泛应用于大型地面光伏电站和屋顶分布式光伏电站中。在这些光伏电站中采用最多的是单晶硅太阳电池和多晶硅太阳电池，而这两种电池均为单个p-n结结构，其理论极限效率为29％，目前技术发展较为成熟，已经越来越接近该理论极限，发展空间有限。采用多个p-n结的砷化镓(GaAs)多结电池可以更加充分的利用太阳光谱，能显著提高电池效率，然而由于成本太高主要应用于空间电源领域。目前技术发展较为成熟的GaInP/GaAs/Ge三结电池空间转换效率达30％以上，地面光谱转换效率可达33％以上。将GaAs多结电池广泛应用于地面光伏电站面临着两个关键难题：第一，由于需要基于价格昂贵的Ge衬底进行制作，制造成本较高，即使结合透镜和追日技术制作成高倍聚光光伏发电系统，其综合成本也远高于晶硅电池发电系统；第二，GaAs多结电池材料中含有大量的As元素，不仅会给制造过程中的生产废料处理带来很大难度，而且在实际应用中遇到火灾时会产生大量有毒物质，造成环境污染。因此，如果采用价格相对低廉的硅衬底，并制备无砷化合物多结电池就可以解决这两个难题，既获得了比单结硅电池高出很多的光电转换效率，又降低了多结电池的制造成本，使多结电池最终可以应用于地面大规模光伏电站。
半导体化合物GaP材料与Si的晶格常数非常接近，然而GaP的光学带隙为2.26eV，由于其带隙较高应用于多结电池时会造成整体电流偏低。研究者发现在GaP材料中掺入少量的N原子形成GaNP材料后，不仅晶格常数与Si更加匹配，而且材料光学带隙还能降低至2.05～2.15eV之间(W.Shan,W.Walukiewicz,K.M.Yu,et al.,Applied Physics Letters76(22),3251-3253(2000))，比GaP材料更加适合应用于多结太阳电池。
同时有研究表明，如果在GaInP合金中掺入少量的N可形成GaInNP四元合金材料，其材料带隙可以在1.3～2.0eV之间连续可调，同时还能与Si材料保持晶格匹配(S.Almosni,C.Robert,T.Nguyen Thanh,et al.,Journal of Applied Physics 113(12),123509(2013))，非常适合与晶硅材料结合制备太阳电池。
而另一种三元合金材料InNSb在N组分约为70％时，晶格常数与Si材料相同，材料带隙约为0.6eV，只需再掺入微量的P元素即可获得带隙在0.65～0.75eV之间的InNSbP材料，并且保持与Si材料晶格匹配。
理论分析表明，带隙结构为2.13/1.55/1.13/0.71eV的四结太阳电池在地面标准光谱的极限转换效率可达50％以上(A.Marti and G.L.Araujo,Sol.EnergyMater.Sol.Cells 43(2),203-222(1996))。因此，利用与Si材料晶格匹配的GaNP、GaInNP和InNSbP无砷化合物材料与Si衬底相结合，可以得到带隙组合为2.05～2.15/1.50～1.60/1.12/0.65～0.75eV的GaNP/GaInNP/Si/InNSbP四结太阳电池，与四结电池的最优带隙结构非常匹配，理论效率可达50％以上。同时，该四结电池基于Si衬底制作，可显著降低多结电池的制造成本，并且所采用材料均为无砷化合物，在生产和应用过程中更加安全环保。
发明内容
本发明的目的在于克服现有技术的不足与缺点，提出了一种晶格匹配的硅基无砷化合物四结太阳电池，在降低四结电池制造成本并提高转换效率的同时，使四结电池在生产和应用过程中更加安全环保。
为实现上述目的，本发明所提供的技术方案为：一种晶格匹配的硅基无砷化合物四结太阳电池，包括Si衬底，所述Si衬底为双面抛光的p型或n型Si单晶片；在所述Si衬底的上表面按照层状叠加结构从上至下依次设置有GaNP子电池、GaInNP子电池和Si子电池；在所述Si衬底的下表面设置有InNSbP子电池；所述GaNP子电池和GaInNP子电池之间通过第三隧道结连接，所述GaInNP子电池和Si子电池之间通过第二隧道结连接，所述Si衬底和InNSbP子电池之间通过第一隧道结连接。
进一步，所述GaNP子电池、GaInNP子电池、Si子电池和InNSbP子电池的所有材料层的晶格常数与Si衬底保持一致。
进一步，所述GaNP子电池中GaNP材料的光学带隙为2.05～2.15eV，该子电池总厚度为1～3μm。
进一步，所述GaInNP子电池中GaInNP材料的光学带隙为1.50～1.60eV，该子电池总厚度为1～3μm。
进一步，所述Si子电池中Si材料的光学带隙为1.12eV，该子电池总厚度为200～800μm。
进一步，所述InNSbP子电池中InNSbP材料的光学带隙为0.65～0.75eV，该子电池总厚度为1～3μm。
本发明与现有技术相比，具有如下优点与有益效果：
本发明利用双面抛光的单晶Si衬底，结合GaNP、GaInNP、InNSbP等无砷化合物材料的自身特点，在Si衬底上表面设置有GaNP子电池、GaInNP子电池和Si子电池，在其下表面设置有InNSbP子电池，最终得到带隙结构为2.05～2.15/1.50～1.60/1.12/0.65～0.75eV的GaNP/GaInNP/Si/InNSbP四结太阳电池。该硅基无砷化合物四结太阳电池带隙组合与理论最优结构相匹配，可大大提升电池转换效率，显著降低四结电池制造成本，而且在生产和应用过程中更加安全环保。
附图说明
图1为晶格匹配的硅基无砷化合物四结太阳电池结构示意图。
具体实施方式
下面结合具体实施例对本发明作进一步说明。
参见图1所示，本实施例所提供的晶格匹配的硅基无砷化合物四结太阳电池，包括有Si衬底，为双面抛光的p型或n型Si单晶片；在所述Si衬底的上表面按照层状叠加结构从上至下依次设置有GaNP子电池、GaInNP子电池和Si子电池；在所述Si衬底的下表面设置有InNSbP子电池；所述GaNP子电池和GaInNP子电池之间通过第三隧道结连接，所述GaInNP子电池和Si子电池之间通过第二隧道结连接，所述Si衬底和InNSbP子电池之间通过第一隧道结连接。
所述GaNP子电池、GaInNP子电池、Si子电池和InNSbP子电池的所有材料层的晶格常数与Si衬底保持一致。
所述GaNP子电池中GaNP材料的光学带隙为2.05～2.15eV，该子电池总厚度为1～3μm。
所述GaInNP子电池中GaInNP材料的光学带隙为1.50～1.60eV，该子电池总厚度为1～3μm。
所述Si子电池中Si材料的光学带隙为1.12eV，该子电池总厚度为200～800μm。
所述InNSbP子电池中InNSbP材料的光学带隙为0.65～0.75eV，该子电池总厚度为1～3μm。
下面为本实施例上述晶格匹配的硅基无砷化合物四结太阳电池的具体制备过程，其情况如下：
首先，以4英寸双面抛光的p型单晶Si片为衬底，然后采用金属有机化学气相沉积技术(MOCVD)或分子束外延技术(MBE)在Si衬底的上表面依次生长Si子电池、第二隧道结、GaInNP子电池、第三隧道结和GaNP子电池，然后将Si衬底翻转180，再在Si衬底的下表面依次生长第一隧道结和InNSbP子电池，即可完成晶格匹配的硅基无砷化合物四结太阳电池的制备。
综上所述，本发明利用双面抛光的单晶Si衬底，结合GaNP、GaInNP、InNSbP等无砷化合物材料的自身特点，在Si衬底上表面设置有GaNP子电池、GaInNP子电池和Si子电池，在其下表面设置有InNSbP子电池，最终得到带隙结构为2.05～2.15/1.50～1.60/1.12/0.65～0.75eV的GaNP/GaInNP/Si/InNSbP硅基无砷化合物四结太阳电池。该硅基无砷化合物四结太阳电池带隙组合与理论最优结构相匹配，可大大提升电池转换效率，显著降低多结电池制造成本，而且在生产和应用过程中更加安全环保。总之，本发明可以基于成本较低的Si衬底制作适用于地面光伏电站的高效四结太阳电池，具有实际应用价值，值得推广。
以上所述之实施例子只为本发明之较佳实施例，并非以此限制本发明的实施范围，故凡依本发明之形状、原理所作的变化，均应涵盖在本发明的保护范围内。

Claims (6)

1.一种晶格匹配的硅基无砷化合物四结太阳电池，包括Si衬底，其特征在于：所述Si衬底为双面抛光的p型或n型Si单晶片；在所述Si衬底的上表面按照层状叠加结构从上至下依次设置有GaNP子电池、GaInNP子电池和Si子电池；在所述Si衬底的下表面设置有InNSbP子电池；所述GaNP子电池和GaInNP子电池之间通过第三隧道结连接，所述GaInNP子电池和Si子电池之间通过第二隧道结连接，所述Si衬底和InNSbP子电池之间通过第一隧道结连接。
2.根据权利要求1所述的一种晶格匹配的硅基无砷化合物四结太阳电池，其特征在于：所述GaNP子电池、GaInNP子电池、Si子电池和InNSbP子电池的所有材料层的晶格常数与Si衬底保持一致。
3.根据权利要求1所述的一种晶格匹配的硅基无砷化合物四结太阳电池，其特征在于：所述GaNP子电池中GaNP材料的光学带隙为2.05～2.15eV，该子电池总厚度为1～3μm。
4.根据权利要求1所述的一种晶格匹配的硅基无砷化合物四结太阳电池，其特征在于：所述GaInNP子电池中GaInNP材料的光学带隙为1.50～1.60eV，该子电池总厚度为1～3μm。
5.根据权利要求1所述的一种晶格匹配的硅基无砷化合物四结太阳电池，其特征在于：所述Si子电池中Si材料的光学带隙为1.12eV，该子电池总厚度为200～800μm。
6.根据权利要求1所述的一种晶格匹配的硅基无砷化合物四结太阳电池，其特征在于：所述InNSbP子电池中InNSbP材料的光学带隙为0.65～0.75eV，该子电池总厚度为1～3μm。
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CN112152084A (zh) * 2020-09-27 2020-12-29 深圳市飞研智能科技有限公司 一种晶格匹配的硅基GaInNP垂直腔面发射激光器
CN114300564A (zh) * 2021-12-28 2022-04-08 武汉锐科光纤激光技术股份有限公司 双面太阳能电池以及其制作方法

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