DE3587702D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE3587702D1
DE3587702D1 DE90118783T DE3587702T DE3587702D1 DE 3587702 D1 DE3587702 D1 DE 3587702D1 DE 90118783 T DE90118783 T DE 90118783T DE 3587702 T DE3587702 T DE 3587702T DE 3587702 D1 DE3587702 D1 DE 3587702D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE90118783T
Other languages
English (en)
Other versions
DE3587702T2 (de
Inventor
Saburo Yamamoto
Hiroshi Hayashi
Taiji Morimoto
Seiki Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8325084A external-priority patent/JPS60225423A/ja
Priority claimed from JP8325184A external-priority patent/JPS60225490A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3587702D1 publication Critical patent/DE3587702D1/de
Publication of DE3587702T2 publication Critical patent/DE3587702T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE90118783T 1984-04-24 1985-04-23 Halbleiterlaser. Expired - Lifetime DE3587702T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8325084A JPS60225423A (ja) 1984-04-24 1984-04-24 液相エピタキシヤル成長方法
JP8325184A JPS60225490A (ja) 1984-04-24 1984-04-24 半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
DE3587702D1 true DE3587702D1 (de) 1994-02-03
DE3587702T2 DE3587702T2 (de) 1994-04-07

Family

ID=26424303

Family Applications (2)

Application Number Title Priority Date Filing Date
DE90118783T Expired - Lifetime DE3587702T2 (de) 1984-04-24 1985-04-23 Halbleiterlaser.
DE8585302819T Expired - Lifetime DE3586293T2 (de) 1984-04-24 1985-04-23 Halbleiterlaser.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8585302819T Expired - Lifetime DE3586293T2 (de) 1984-04-24 1985-04-23 Halbleiterlaser.

Country Status (3)

Country Link
US (1) US4792960A (de)
EP (2) EP0160490B1 (de)
DE (2) DE3587702T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03127891A (ja) * 1989-10-13 1991-05-30 Mitsubishi Electric Corp 半導体レーザ装置
JPH0461292A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体レーザ
DE4035994A1 (de) * 1990-11-12 1992-05-14 Siemens Ag Schaltung und verfahren zur anpassung von antennen in einem kernspinresonanz-bildgeraet
US6009113A (en) * 1994-07-18 1999-12-28 Sharp Kabushiki Kaisha Semiconductor laser device having clad and contact layers respectively doped with Mg and method for fabricating the same
JP3195715B2 (ja) * 1994-07-18 2001-08-06 シャープ株式会社 半導体レーザ素子及びその製造方法
JPH1012958A (ja) * 1996-06-19 1998-01-16 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
US20030063645A1 (en) * 2001-09-28 2003-04-03 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for suppressing fabry perot oscillations
US11217964B2 (en) * 2018-12-28 2022-01-04 Intel Corporation Current channel for III-V silicon hybrid laser

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125690A (en) * 1979-03-22 1980-09-27 Nec Corp Semiconductor laser
JPS5742184A (en) * 1980-08-26 1982-03-09 Sharp Corp Semiconductor laser element
JPS58115877A (ja) * 1981-12-28 1983-07-09 Sharp Corp 半導体レ−ザ素子
JPS5940592A (ja) * 1982-08-30 1984-03-06 Sharp Corp 半導体レ−ザ素子
US4589115A (en) * 1983-09-09 1986-05-13 Xerox Corporation Wavelength tuning of quantum well heterostructure lasers using an external grating
JPS6091692A (ja) * 1983-10-25 1985-05-23 Sharp Corp 半導体レ−ザ装置

Also Published As

Publication number Publication date
DE3587702T2 (de) 1994-04-07
DE3586293D1 (de) 1992-08-13
EP0412582B1 (de) 1993-12-22
EP0160490A2 (de) 1985-11-06
US4792960A (en) 1988-12-20
EP0160490B1 (de) 1992-07-08
EP0412582A1 (de) 1991-02-13
DE3586293T2 (de) 1993-04-29
EP0160490A3 (en) 1987-07-15

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Legal Events

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