DE3483856D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE3483856D1
DE3483856D1 DE8484305129T DE3483856T DE3483856D1 DE 3483856 D1 DE3483856 D1 DE 3483856D1 DE 8484305129 T DE8484305129 T DE 8484305129T DE 3483856 T DE3483856 T DE 3483856T DE 3483856 D1 DE3483856 D1 DE 3483856D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484305129T
Other languages
English (en)
Inventor
Toshiro Hayakawa
Nobuyuki Miyauchi
Seiki Yano
Takahiro Suyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3483856D1 publication Critical patent/DE3483856D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8484305129T 1983-07-29 1984-07-27 Halbleiterlaser. Expired - Lifetime DE3483856D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58140756A JPS6031288A (ja) 1983-07-29 1983-07-29 半導体レ−ザ素子

Publications (1)

Publication Number Publication Date
DE3483856D1 true DE3483856D1 (de) 1991-02-07

Family

ID=15276003

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484305129T Expired - Lifetime DE3483856D1 (de) 1983-07-29 1984-07-27 Halbleiterlaser.

Country Status (4)

Country Link
US (1) US4637029A (de)
EP (1) EP0133036B1 (de)
JP (1) JPS6031288A (de)
DE (1) DE3483856D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
JPH0770971B2 (ja) * 1986-03-13 1995-07-31 ソニー株式会社 テレビ及びラジオ受信装置
JPH0398539U (de) * 1990-01-29 1991-10-14
US5412679A (en) * 1994-02-14 1995-05-02 Eastman Kodak Company Optical waveguide epitaxially grown on semiconductors for upconversion
US6551857B2 (en) * 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US8933715B2 (en) 2012-04-08 2015-01-13 Elm Technology Corporation Configurable vertical integration

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637687A (en) * 1979-09-04 1981-04-11 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS58206184A (ja) * 1982-05-25 1983-12-01 Sharp Corp 半導体レ−ザ素子及びその製造方法
JPS5917292A (ja) * 1982-07-20 1984-01-28 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
JPS6031288A (ja) 1985-02-18
US4637029A (en) 1987-01-13
EP0133036A2 (de) 1985-02-13
EP0133036B1 (de) 1990-12-27
EP0133036A3 (en) 1986-03-05

Similar Documents

Publication Publication Date Title
DE3482935D1 (de) Halbleiterlaservorrichtung.
DE3584702D1 (de) Halbleiterlaservorrichtung.
DE3584330D1 (de) Halbleiterlaservorrichtung.
DE3751548T2 (de) Halbleiterlaser.
DE3483769D1 (de) Halbleiterdiode.
DE3587748T2 (de) Halbleiterlaseranordnung.
DE3483450D1 (de) Halbleiterlaser.
DE3873689T2 (de) Halbleiterlaser.
DE3575501D1 (de) Halbleiterlaser.
DE3579991D1 (de) Halbleiterlaser.
DE3586934D1 (de) Halbleiterlaser.
DE3778510D1 (de) Halbleiterlaser.
DE3581557D1 (de) Halbleiterlaser.
DE3579826D1 (de) Halbleiterlaser.
DE3484817D1 (de) Halbleiteranordnung.
NL190943C (nl) Halfgeleiderlaser.
DE3575243D1 (de) Halbleiterlaser.
DE3485537D1 (de) Halbleiter-laservorrichtung.
DE3485698D1 (de) Halbleiterlaser.
DE3587702T2 (de) Halbleiterlaser.
DE3482297D1 (de) Halbleiterlaser.
DE3581025D1 (de) Halbleiterlaser-vielfachanordnung.
DE3583202D1 (de) Halbleiterlaser.
DE3483856D1 (de) Halbleiterlaser.
DE3480758D1 (de) Halbleiterlaser.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN