DE68918022D1 - Halbleiterlaser mit Stegwellenleiter. - Google Patents

Halbleiterlaser mit Stegwellenleiter.

Info

Publication number
DE68918022D1
DE68918022D1 DE68918022T DE68918022T DE68918022D1 DE 68918022 D1 DE68918022 D1 DE 68918022D1 DE 68918022 T DE68918022 T DE 68918022T DE 68918022 T DE68918022 T DE 68918022T DE 68918022 D1 DE68918022 D1 DE 68918022D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
ridge waveguide
waveguide
ridge
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918022T
Other languages
English (en)
Other versions
DE68918022T2 (de
Inventor
Motoyuki Intellectual Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68918022D1 publication Critical patent/DE68918022D1/de
Application granted granted Critical
Publication of DE68918022T2 publication Critical patent/DE68918022T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
DE68918022T 1988-07-25 1989-07-25 Halbleiterlaser mit Stegwellenleiter. Expired - Fee Related DE68918022T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63183495A JP2721185B2 (ja) 1988-07-25 1988-07-25 リブ導波路型発光半導体装置

Publications (2)

Publication Number Publication Date
DE68918022D1 true DE68918022D1 (de) 1994-10-13
DE68918022T2 DE68918022T2 (de) 1995-02-02

Family

ID=16136821

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918022T Expired - Fee Related DE68918022T2 (de) 1988-07-25 1989-07-25 Halbleiterlaser mit Stegwellenleiter.

Country Status (5)

Country Link
US (1) US4959839A (de)
EP (1) EP0353033B1 (de)
JP (1) JP2721185B2 (de)
KR (1) KR920005132B1 (de)
DE (1) DE68918022T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202895A (en) * 1990-05-07 1993-04-13 Kabushiki Kaisha Toshiba Semiconductor device having an active layer made of ingaalp material
JP2863648B2 (ja) * 1991-04-16 1999-03-03 三菱電機株式会社 可視光半導体レーザ
US5383214A (en) * 1992-07-16 1995-01-17 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and a method for producing the same
JPH06244490A (ja) * 1993-02-15 1994-09-02 Sumitomo Electric Ind Ltd 半導体レーザおよびその製造方法
US5301202A (en) * 1993-02-25 1994-04-05 International Business Machines, Corporation Semiconductor ridge waveguide laser with asymmetrical cladding
JPH08139360A (ja) * 1994-09-12 1996-05-31 Showa Denko Kk 半導体ヘテロ接合材料
US5889805A (en) * 1996-11-01 1999-03-30 Coherent, Inc. Low-threshold high-efficiency laser diodes with aluminum-free active region
JP4939804B2 (ja) 2005-12-21 2012-05-30 三星電子株式会社 不揮発性半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102286A (en) * 1979-01-30 1980-08-05 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser element
JPS5654083A (en) * 1979-10-05 1981-05-13 Nec Corp Semiconductor laser apparatus
JPS61272988A (ja) * 1985-05-29 1986-12-03 Hitachi Ltd 半導体レ−ザ装置
JPS61284985A (ja) * 1985-06-12 1986-12-15 Hitachi Ltd 半導体レ−ザ装置の作製方法
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
KR920005132B1 (ko) 1992-06-26
EP0353033B1 (de) 1994-09-07
EP0353033A2 (de) 1990-01-31
US4959839A (en) 1990-09-25
EP0353033A3 (en) 1990-09-05
JPH0233987A (ja) 1990-02-05
KR900002475A (ko) 1990-02-28
JP2721185B2 (ja) 1998-03-04
DE68918022T2 (de) 1995-02-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee