KR900002475A - 리브도파로형 발광반도체장치 - Google Patents

리브도파로형 발광반도체장치 Download PDF

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Publication number
KR900002475A
KR900002475A KR1019890010487A KR890010487A KR900002475A KR 900002475 A KR900002475 A KR 900002475A KR 1019890010487 A KR1019890010487 A KR 1019890010487A KR 890010487 A KR890010487 A KR 890010487A KR 900002475 A KR900002475 A KR 900002475A
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KR
South Korea
Prior art keywords
layer
light emitting
semiconductor device
emitting semiconductor
waveguide light
Prior art date
Application number
KR1019890010487A
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English (en)
Other versions
KR920005132B1 (ko
Inventor
모토유키 야마모토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900002475A publication Critical patent/KR900002475A/ko
Application granted granted Critical
Publication of KR920005132B1 publication Critical patent/KR920005132B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

내용 없음.

Description

리브도파로형 발광반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 리브도파로형 발광반도체장치의 주요부를 도시해 놓은 단면도.

Claims (1)

  1. 도핑되지 않은 활성층(3)이 도전형이 다른 상부 및 하부 클래드층(4,2)간에 형성되어 있고, 상기 상부 클래드층(4)에는 다층방향에 수직인 방향으로 줄무늬모양의 메사부(7)가 형성되어 있으며, 이 메사부(7)상에 상부클래드층(4)과 동일한 도전형의 저항층(6)이 형성되어 있고, 상기 상부 클래드층(4)중 메사부(7)이외의 부분이 그 상부클래드층(4)과 반대도전형의 전류저지층(9)으로 매립되어 있는 리브도파로형 발광반도체장치에 있어서, 상기 줄무늬모양이 메사부(7)와 저항층(6)간에 이를 층(7,6)보다 불순물농도가 높은 중간층(5)이 형성되어 있는 것을 특징으로 하는 리브도파로형 발광반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890010487A 1988-07-25 1989-07-25 리브도파로형 발광반도체장치 KR920005132B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63-183495 1988-07-25
JP63183495A JP2721185B2 (ja) 1988-07-25 1988-07-25 リブ導波路型発光半導体装置
JP88-183495 1998-07-25

Publications (2)

Publication Number Publication Date
KR900002475A true KR900002475A (ko) 1990-02-28
KR920005132B1 KR920005132B1 (ko) 1992-06-26

Family

ID=16136821

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890010487A KR920005132B1 (ko) 1988-07-25 1989-07-25 리브도파로형 발광반도체장치

Country Status (5)

Country Link
US (1) US4959839A (ko)
EP (1) EP0353033B1 (ko)
JP (1) JP2721185B2 (ko)
KR (1) KR920005132B1 (ko)
DE (1) DE68918022T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7499318B2 (en) 2005-12-21 2009-03-03 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device having a management memory capable of suppressing bitline interference during a read operation

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69115555T2 (de) * 1990-05-07 1996-09-05 Toshiba Kawasaki Kk Halbleiterlaser
JP2863648B2 (ja) * 1991-04-16 1999-03-03 三菱電機株式会社 可視光半導体レーザ
US5383214A (en) * 1992-07-16 1995-01-17 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and a method for producing the same
JPH06244490A (ja) * 1993-02-15 1994-09-02 Sumitomo Electric Ind Ltd 半導体レーザおよびその製造方法
US5301202A (en) * 1993-02-25 1994-04-05 International Business Machines, Corporation Semiconductor ridge waveguide laser with asymmetrical cladding
JPH08139360A (ja) * 1994-09-12 1996-05-31 Showa Denko Kk 半導体ヘテロ接合材料
US5889805A (en) * 1996-11-01 1999-03-30 Coherent, Inc. Low-threshold high-efficiency laser diodes with aluminum-free active region

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102286A (en) * 1979-01-30 1980-08-05 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser element
JPS5654083A (en) * 1979-10-05 1981-05-13 Nec Corp Semiconductor laser apparatus
JPS61272988A (ja) * 1985-05-29 1986-12-03 Hitachi Ltd 半導体レ−ザ装置
JPS61284985A (ja) * 1985-06-12 1986-12-15 Hitachi Ltd 半導体レ−ザ装置の作製方法
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7499318B2 (en) 2005-12-21 2009-03-03 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device having a management memory capable of suppressing bitline interference during a read operation

Also Published As

Publication number Publication date
JP2721185B2 (ja) 1998-03-04
KR920005132B1 (ko) 1992-06-26
DE68918022D1 (de) 1994-10-13
US4959839A (en) 1990-09-25
EP0353033A3 (en) 1990-09-05
DE68918022T2 (de) 1995-02-02
JPH0233987A (ja) 1990-02-05
EP0353033B1 (en) 1994-09-07
EP0353033A2 (en) 1990-01-31

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