KR900002475A - 리브도파로형 발광반도체장치 - Google Patents
리브도파로형 발광반도체장치 Download PDFInfo
- Publication number
- KR900002475A KR900002475A KR1019890010487A KR890010487A KR900002475A KR 900002475 A KR900002475 A KR 900002475A KR 1019890010487 A KR1019890010487 A KR 1019890010487A KR 890010487 A KR890010487 A KR 890010487A KR 900002475 A KR900002475 A KR 900002475A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- light emitting
- semiconductor device
- emitting semiconductor
- waveguide light
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 238000005253 cladding Methods 0.000 claims 5
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 리브도파로형 발광반도체장치의 주요부를 도시해 놓은 단면도.
Claims (1)
- 도핑되지 않은 활성층(3)이 도전형이 다른 상부 및 하부 클래드층(4,2)간에 형성되어 있고, 상기 상부 클래드층(4)에는 다층방향에 수직인 방향으로 줄무늬모양의 메사부(7)가 형성되어 있으며, 이 메사부(7)상에 상부클래드층(4)과 동일한 도전형의 저항층(6)이 형성되어 있고, 상기 상부 클래드층(4)중 메사부(7)이외의 부분이 그 상부클래드층(4)과 반대도전형의 전류저지층(9)으로 매립되어 있는 리브도파로형 발광반도체장치에 있어서, 상기 줄무늬모양이 메사부(7)와 저항층(6)간에 이를 층(7,6)보다 불순물농도가 높은 중간층(5)이 형성되어 있는 것을 특징으로 하는 리브도파로형 발광반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-183495 | 1988-07-25 | ||
JP63183495A JP2721185B2 (ja) | 1988-07-25 | 1988-07-25 | リブ導波路型発光半導体装置 |
JP88-183495 | 1998-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900002475A true KR900002475A (ko) | 1990-02-28 |
KR920005132B1 KR920005132B1 (ko) | 1992-06-26 |
Family
ID=16136821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890010487A KR920005132B1 (ko) | 1988-07-25 | 1989-07-25 | 리브도파로형 발광반도체장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4959839A (ko) |
EP (1) | EP0353033B1 (ko) |
JP (1) | JP2721185B2 (ko) |
KR (1) | KR920005132B1 (ko) |
DE (1) | DE68918022T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7499318B2 (en) | 2005-12-21 | 2009-03-03 | Samsung Electronics Co., Ltd. | Nonvolatile semiconductor memory device having a management memory capable of suppressing bitline interference during a read operation |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5202895A (en) * | 1990-05-07 | 1993-04-13 | Kabushiki Kaisha Toshiba | Semiconductor device having an active layer made of ingaalp material |
JP2863648B2 (ja) * | 1991-04-16 | 1999-03-03 | 三菱電機株式会社 | 可視光半導体レーザ |
US5383214A (en) * | 1992-07-16 | 1995-01-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and a method for producing the same |
JPH06244490A (ja) * | 1993-02-15 | 1994-09-02 | Sumitomo Electric Ind Ltd | 半導体レーザおよびその製造方法 |
US5301202A (en) * | 1993-02-25 | 1994-04-05 | International Business Machines, Corporation | Semiconductor ridge waveguide laser with asymmetrical cladding |
JPH08139360A (ja) * | 1994-09-12 | 1996-05-31 | Showa Denko Kk | 半導体ヘテロ接合材料 |
US5889805A (en) * | 1996-11-01 | 1999-03-30 | Coherent, Inc. | Low-threshold high-efficiency laser diodes with aluminum-free active region |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55102286A (en) * | 1979-01-30 | 1980-08-05 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser element |
JPS5654083A (en) * | 1979-10-05 | 1981-05-13 | Nec Corp | Semiconductor laser apparatus |
JPS61272988A (ja) * | 1985-05-29 | 1986-12-03 | Hitachi Ltd | 半導体レ−ザ装置 |
JPS61284985A (ja) * | 1985-06-12 | 1986-12-15 | Hitachi Ltd | 半導体レ−ザ装置の作製方法 |
US4792958A (en) * | 1986-02-28 | 1988-12-20 | Kabushiki Kaisha Toshiba | Semiconductor laser with mesa stripe waveguide structure |
JPS63164484A (ja) * | 1986-12-26 | 1988-07-07 | Sharp Corp | 半導体レ−ザ素子 |
-
1988
- 1988-07-25 JP JP63183495A patent/JP2721185B2/ja not_active Expired - Lifetime
-
1989
- 1989-07-24 US US07/383,530 patent/US4959839A/en not_active Expired - Lifetime
- 1989-07-25 EP EP89307565A patent/EP0353033B1/en not_active Expired - Lifetime
- 1989-07-25 DE DE68918022T patent/DE68918022T2/de not_active Expired - Fee Related
- 1989-07-25 KR KR1019890010487A patent/KR920005132B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7499318B2 (en) | 2005-12-21 | 2009-03-03 | Samsung Electronics Co., Ltd. | Nonvolatile semiconductor memory device having a management memory capable of suppressing bitline interference during a read operation |
Also Published As
Publication number | Publication date |
---|---|
KR920005132B1 (ko) | 1992-06-26 |
JP2721185B2 (ja) | 1998-03-04 |
EP0353033A3 (en) | 1990-09-05 |
DE68918022T2 (de) | 1995-02-02 |
EP0353033A2 (en) | 1990-01-31 |
US4959839A (en) | 1990-09-25 |
DE68918022D1 (de) | 1994-10-13 |
JPH0233987A (ja) | 1990-02-05 |
EP0353033B1 (en) | 1994-09-07 |
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