ATE143176T1 - Lichtemittierende halbleitervorrichtung und übergitterstruktur - Google Patents

Lichtemittierende halbleitervorrichtung und übergitterstruktur

Info

Publication number
ATE143176T1
ATE143176T1 AT92103465T AT92103465T ATE143176T1 AT E143176 T1 ATE143176 T1 AT E143176T1 AT 92103465 T AT92103465 T AT 92103465T AT 92103465 T AT92103465 T AT 92103465T AT E143176 T1 ATE143176 T1 AT E143176T1
Authority
AT
Austria
Prior art keywords
active layer
layer
energy gap
layers
quantum barrier
Prior art date
Application number
AT92103465T
Other languages
English (en)
Inventor
Kenichi Iga
Fumio Koyama
Takeshi Takagi
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Application granted granted Critical
Publication of ATE143176T1 publication Critical patent/ATE143176T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H01S5/2013—MQW barrier reflection layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
AT92103465T 1991-02-28 1992-02-28 Lichtemittierende halbleitervorrichtung und übergitterstruktur ATE143176T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05544291A JP3181063B2 (ja) 1991-02-28 1991-02-28 超格子構造体，それを用いた電子またはホールの閉じ込め構造および半導体発光素子

Publications (1)

Publication Number Publication Date
ATE143176T1 true ATE143176T1 (de) 1996-10-15

Family

ID=12998710

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92103465T ATE143176T1 (de) 1991-02-28 1992-02-28 Lichtemittierende halbleitervorrichtung und übergitterstruktur

Country Status (4)

Country Link
EP (1) EP0502442B1 (de)
JP (1) JP3181063B2 (de)
AT (1) ATE143176T1 (de)
DE (1) DE69213787T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5600667A (en) * 1993-04-05 1997-02-04 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
JPH06334265A (ja) * 1993-05-19 1994-12-02 Mitsubishi Electric Corp 量子井戸型半導体レーザ
JPH0888434A (ja) * 1994-09-19 1996-04-02 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
JPH1079554A (ja) * 1996-09-04 1998-03-24 Mitsubishi Electric Corp 光半導体装置
US6737684B1 (en) 1998-02-20 2004-05-18 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0634425B2 (ja) * 1986-07-25 1994-05-02 三菱電機株式会社 半導体レ−ザ
JPH0666519B2 (ja) * 1986-08-14 1994-08-24 東京工業大学長 超格子構造体
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置

Also Published As

Publication number Publication date
JPH04273491A (ja) 1992-09-29
DE69213787D1 (de) 1996-10-24
EP0502442A2 (de) 1992-09-09
EP0502442A3 (en) 1993-02-03
DE69213787T2 (de) 1997-05-07
JP3181063B2 (ja) 2001-07-03
EP0502442B1 (de) 1996-09-18

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