JPS55102286A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS55102286A
JPS55102286A JP877579A JP877579A JPS55102286A JP S55102286 A JPS55102286 A JP S55102286A JP 877579 A JP877579 A JP 877579A JP 877579 A JP877579 A JP 877579A JP S55102286 A JPS55102286 A JP S55102286A
Authority
JP
Japan
Prior art keywords
layer
type inp
clad layer
end surfaces
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP877579A
Other languages
Japanese (ja)
Inventor
Takaya Yamamoto
Shigeyuki Akiba
Kazuo Sakai
Yuichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP877579A priority Critical patent/JPS55102286A/en
Publication of JPS55102286A publication Critical patent/JPS55102286A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To obtain stable lateral basic mode oscillation of a double hetero construction laser by forming projected stripes on the clad layer on an acitive layer.
CONSTITUTION: An n-type InP clad layer 15, a non-doped In1-XGaXAsP1-Y active layer 16, and a p-type InP clad layer 17 are sequentially formed on an n-type InP substrate 14. A projected stripe 31 is formed in a plane parallel with the end surfaces 30, 30a on the layer 17, and the end surfaces 30, 30a are so etched as to form vertical stripes. An n-type In1-XGaXAsYP1-Y layer 18 is grown on the etched portion, and an ohmic electrode 7 is evaporated thereon. Thus, refractive index difference occurs laterally on the active layer 16 in the vicinity of the stripe 31 to effectively enclose the light to thus obtain stable lateral basic mode oscillation of a double hetero construction laser.
COPYRIGHT: (C)1980,JPO&Japio
JP877579A 1979-01-30 1979-01-30 Semiconductor laser element Pending JPS55102286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP877579A JPS55102286A (en) 1979-01-30 1979-01-30 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP877579A JPS55102286A (en) 1979-01-30 1979-01-30 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS55102286A true JPS55102286A (en) 1980-08-05

Family

ID=11702253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP877579A Pending JPS55102286A (en) 1979-01-30 1979-01-30 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS55102286A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959839A (en) * 1988-07-25 1990-09-25 Kabushiki Kaisha Toshiba Rib waveguide type semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959839A (en) * 1988-07-25 1990-09-25 Kabushiki Kaisha Toshiba Rib waveguide type semiconductor laser

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