KR970705838A - 발광 다이오드칩 및 이를 사용한 발광 다이오드 - Google Patents

발광 다이오드칩 및 이를 사용한 발광 다이오드

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Publication number
KR970705838A
KR970705838A KR1019970701136A KR19970701136A KR970705838A KR 970705838 A KR970705838 A KR 970705838A KR 1019970701136 A KR1019970701136 A KR 1019970701136A KR 19970701136 A KR19970701136 A KR 19970701136A KR 970705838 A KR970705838 A KR 970705838A
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light emitting
emitting diode
chip
length
diode chip
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KR1019970701136A
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English (en)
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KR100264424B1 (ko
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히로키 이시나가
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사토오 켄이치로
롬 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

복수의 재료층(2~6)을 적층하여 이루어지는 InGaAlP계 칩인 발광 다이오드칩(1)은, 상기 재료(2~6)의 적층 방향으로 직교하는 표면은 직사각형이며, 그 직사각형의 각 변의 길이가 0.25㎜ 이하이다. 이 발광 다이오드칩(1)을 사용하여 발광 다이오드를 구성하고, 2~5㎃의 순방향 전류에 의해 발광 동작시키면, 종래의 발광 다이오드를 25㎃ 정도의 순방향 전류에 의해 발광 동작되는 경우와 같은 광도를 달성할 수 있다.

Description

발광 다이오드칩 및 이를 사용한 발광 다이오드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 실시예에 관한 발광 다이오드칩의 종단 정면도, 제3도는 동 발광 다이오드칩을 사용한 발광 다이오드의 약시 측면도.

Claims (11)

  1. 복수의 재료층을 적충하여 이루어지는 InGaAlP계 칩인 발광 다이오드칩으로서, 당해 칩에 있어서의 상기 재료층의 적층 방향으로 직교하는 표면은 직사각형이며, 그 직사각형의 각 변의 길이가 0.25mm 이하인 것을 특징으로 하는 발광 다이오드칩.
  2. 제1항에 있어서, 2~5mA의 순방향 전류에 의해 발광 동작케 되는 것을 특징으로 하는 발광 다이오드칩.
  3. 제1항에 있어서, 상기 표면은 정사각형인 것을 특징으로 하는 발광 다이오드칩.
  4. 제1항에 있어서, 상기 표면의 각변의 길이는 0.14~0.25mm인 것을 특징으로 하는 발광 다이오드칩.
  5. 제1항에 있어서, 상기 표면의 각변의 길이는 0.2~0.25mm인 것을 특징을 하는 발광 다이오드칩.
  6. 절연성 재료로 이루어지는 기판과, 이 기판에 형성된 한 쌍의 전극과, 한쪽의 전극에 전기적으로 도통하도록 상기 기판상에 탑재된 복수의 재료층을 적층하여 이루어지는 InGaAlP계 칩인 발광 다이오드칩과, 이 칩을 다른쪽의 전극에 전기적으로 접속하기 위한 와이어와, 상기 칩을 상기 와이어와 함께 봉함하는 투명 패키지를 구비한 발광 다이오드로서, 상기 칩에 있어서의 상기 재료층의 적층 방향으로 직교하는 표면은 직사각형이며, 그 직사각형의 각 변의 길이가 0.25mm 이하인 것을 특징으로 하는 발광 다이오드.
  7. 제6항에 있어서, 2~5mA의 순방향 전류에 의해 발광 동작케 되는 것을 특징으로 하는 발광 다이오드.
  8. 제6항에 있어서, 상기 표면은 정사각형인 것을 특징으로 하는 발광 다이오드.
  9. 제6항에 있어서, 상기 표면의 각변의 길이는 0.14~0.25mm인 것을 특징으로 하는 발광 다이오드.
  10. 제6항에 있어서, 상기 표면의 각변의 길이는 0.2~0.25mm인 것을 특징을 하는 발광 다이오드.
  11. 복수의 재료층을 적층하여 이루어지는 InGaAlP계 칩인 발광 다이오드칩의 사용방법으로서, 당해 칩에 있어서의 상기 재료층의 적층 방향으로 직교하는 표면은 직사각형이며, 그 직사각형의 각 변의 길이가 0.25mm 이하이고, 당해 칩을 2~5mA의 순방향 전류로 발광시키는 발광 다이오드 칩의 사용방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970701136A 1995-06-21 1996-06-20 발광 다이오드칩 및 이를 사용한 발광 다이오드 KR100264424B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15449495 1995-06-21
JP7/154494 1995-06-21
PCT/JP1996/001710 WO1997001190A1 (fr) 1995-06-21 1996-06-20 Puce a diode electroluminescente et diode electroluminescente l'utilisant

Publications (2)

Publication Number Publication Date
KR970705838A true KR970705838A (ko) 1997-10-09
KR100264424B1 KR100264424B1 (ko) 2000-08-16

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Country Status (6)

Country Link
US (1) US5760422A (ko)
JP (1) JP3414403B2 (ko)
KR (1) KR100264424B1 (ko)
DE (1) DE19680637T1 (ko)
GB (1) GB2307104B (ko)
WO (1) WO1997001190A1 (ko)

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Publication number Priority date Publication date Assignee Title
CN1219320C (zh) 1998-05-20 2005-09-14 罗姆股份有限公司 半导体器件
US6169298B1 (en) * 1998-08-10 2001-01-02 Kingmax Technology Inc. Semiconductor light emitting device with conductive window layer
JP4024994B2 (ja) * 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
US6940704B2 (en) 2001-01-24 2005-09-06 Gelcore, Llc Semiconductor light emitting device
JP2002222992A (ja) 2001-01-25 2002-08-09 Rohm Co Ltd Ｌｅｄ発光素子、およびｌｅｄ発光装置
TW200638559A (en) * 2005-04-29 2006-11-01 Hon Hai Prec Ind Co Ltd Light emitting chip and light emitting diode
USD753612S1 (en) * 2012-09-07 2016-04-12 Cree, Inc. Light emitter device
USD847102S1 (en) 2013-02-08 2019-04-30 Epistar Corporation Light emitting diode
TWD161897S (zh) * 2013-02-08 2014-07-21 晶元光電股份有限公司 發光二極體之部分

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Publication number Priority date Publication date Assignee Title
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP3290672B2 (ja) * 1990-08-20 2002-06-10 株式会社東芝 半導体発光ダイオード
JP3104979B2 (ja) * 1990-07-27 2000-10-30 株式会社東芝 紫外域半導体レーザ，半導体素子およびこれらの製造方法
JPH04361572A (ja) * 1991-06-10 1992-12-15 Toshiba Corp 半導体発光素子
JP2798545B2 (ja) * 1992-03-03 1998-09-17 シャープ株式会社 半導体発光素子及びその製造方法
US5265792A (en) * 1992-08-20 1993-11-30 Hewlett-Packard Company Light source and technique for mounting light emitting diodes
US5488233A (en) * 1993-03-11 1996-01-30 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with compound semiconductor layer
JP3264563B2 (ja) * 1993-03-15 2002-03-11 株式会社東芝 半導体発光素子及びその製造方法
JP3152812B2 (ja) * 1993-09-16 2001-04-03 株式会社東芝 半導体発光装置
US5621225A (en) * 1996-01-18 1997-04-15 Motorola Light emitting diode display package

Also Published As

Publication number Publication date
JP3414403B2 (ja) 2003-06-09
GB2307104A (en) 1997-05-14
DE19680637T1 (de) 1997-10-02
GB2307104B (en) 1999-12-29
US5760422A (en) 1998-06-02
KR100264424B1 (ko) 2000-08-16
WO1997001190A1 (fr) 1997-01-09
GB9703017D0 (en) 1997-04-02

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