WO2002103813A1 - Element emetteur de lumiere a semi-conducteur au nitrure, et dispositif emetteur de lumiere utilisant cet element - Google Patents

Element emetteur de lumiere a semi-conducteur au nitrure, et dispositif emetteur de lumiere utilisant cet element Download PDF

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Publication number
WO2002103813A1
WO2002103813A1 PCT/JP2002/005998 JP0205998W WO02103813A1 WO 2002103813 A1 WO2002103813 A1 WO 2002103813A1 JP 0205998 W JP0205998 W JP 0205998W WO 02103813 A1 WO02103813 A1 WO 02103813A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light emitting
nitride semiconductor
conductive
emitting element
Prior art date
Application number
PCT/JP2002/005998
Other languages
English (en)
Japanese (ja)
Inventor
Shinichi Nagahama
Tomotsugu Mitani
Tomoya Yanamoto
Masashi Yamamoto
Original Assignee
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2001/005097 external-priority patent/WO2002103811A1/fr
Application filed by Nichia Corporation filed Critical Nichia Corporation
Priority to JP2003506019A priority Critical patent/JP3956941B2/ja
Publication of WO2002103813A1 publication Critical patent/WO2002103813A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Abstract

L'invention concerne un élément émetteur de lumière à semi-conducteur au nitrure, dont l'efficacité de capter la lumière est accrue et capable de fournir une émission lumineuse à rendement élevé, caractérisé en ce qu'il comprend, formées sur un substrat, une première couche de type conducteur (11), une couche active (3) et une seconde couche de type conducteur (12), et en ce qu'une troisième couche semi-conductrice au nitrure (5) de InAlGaN, fonctionnant comme une couche de constriction de courant ayant une ouverture (41), est prévue entre une première couche semi-conductrice au nitrure (4) et une seconde couche semi-conductrice au nitrure (6) sur la couche (4), à l'intérieur de la seconde couche conductrice (12), et en ce qu'une électrode (20) et une fenêtre (40) ou un film translucide (30) disposés dans la fenêtre (40) sont partiellement prévus sur la surface de la seconde couche de type conducteur, de sorte qu'une grande quantité de lumière peut être captée par la surface supérieure.
PCT/JP2002/005998 2001-06-15 2002-06-17 Element emetteur de lumiere a semi-conducteur au nitrure, et dispositif emetteur de lumiere utilisant cet element WO2002103813A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003506019A JP3956941B2 (ja) 2001-06-15 2002-06-17 窒化物半導体発光素子及びそれを用いた発光装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPPCT/JP01/05097 2001-06-15
PCT/JP2001/005097 WO2002103811A1 (fr) 2001-06-15 2001-06-15 Appareil semi-conducteur d'emission de lumiere
JP2001300928 2001-09-28
JP2001-300928 2001-09-28

Publications (1)

Publication Number Publication Date
WO2002103813A1 true WO2002103813A1 (fr) 2002-12-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/005998 WO2002103813A1 (fr) 2001-06-15 2002-06-17 Element emetteur de lumiere a semi-conducteur au nitrure, et dispositif emetteur de lumiere utilisant cet element

Country Status (2)

Country Link
JP (1) JP3956941B2 (fr)
WO (1) WO2002103813A1 (fr)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005018008A1 (fr) * 2003-08-19 2005-02-24 Nichia Corporation Dispositif a semi-conducteurs
JP2005228924A (ja) * 2004-02-13 2005-08-25 Toshiba Corp 半導体発光素子
WO2005106979A1 (fr) * 2004-04-28 2005-11-10 Mitsubishi Cable Industries, Ltd. Élément luminescent semi-conducteur à nitrure
JPWO2004082034A1 (ja) * 2003-03-14 2006-06-15 住友電気工業株式会社 半導体装置
US7148514B2 (en) 2003-12-23 2006-12-12 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting diode and fabrication method thereof
JP2007036078A (ja) * 2005-07-29 2007-02-08 Showa Denko Kk ｐｎ接合型発光ダイオード
US7227879B2 (en) 2003-06-27 2007-06-05 Nichia Corporation Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
WO2007117035A1 (fr) * 2006-04-12 2007-10-18 Rohm Co., Ltd. Element electroluminescent de nitrure semi-conducteur et son procede de fabrication
JP2008047854A (ja) * 2006-07-19 2008-02-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子
JP2009038355A (ja) * 2007-07-10 2009-02-19 Toyoda Gosei Co Ltd 発光装置
JP2009038377A (ja) * 2007-07-31 2009-02-19 Epivalley Co Ltd Ｉｉｉ族窒化物半導体発光素子
GB2454655A (en) * 2007-11-09 2009-05-20 Sharp Kk Nitride structures with AlInN current confinement layers
US7635875B2 (en) 2001-07-24 2009-12-22 Nichia Corporation Semiconductor light emitting device
JP2010050318A (ja) * 2008-08-22 2010-03-04 Stanley Electric Co Ltd 半導体発光装置の製造方法及び半導体発光装置
JP2011233927A (ja) * 2011-08-02 2011-11-17 Oki Data Corp 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置
WO2012133425A1 (fr) * 2011-03-29 2012-10-04 日本ゼオン株式会社 Élément d'émission de lumière et appareil d'éclairage
JP2012209107A (ja) * 2011-03-29 2012-10-25 Nippon Zeon Co Ltd 面発光素子及び照明器具
JP2012212508A (ja) * 2011-03-30 2012-11-01 Nippon Zeon Co Ltd 発光素子及び照明器具
US8338853B2 (en) 2005-08-25 2012-12-25 Toyota Jidosha Kabushiki Kaisha Substrate for forming light-emitting layer, light emitter and light-emitting substance
JP2014197704A (ja) * 2006-12-11 2014-10-16 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 発光デバイスおよび発光デバイスの作製方法
EP2942823A1 (fr) * 2009-12-09 2015-11-11 LG Innotek Co., Ltd. Dispositif électroluminescent, procédé de fabrication du dispositif électroluminescent, paquet électroluminescent et système d'éclairage
US9978903B2 (en) 2015-11-26 2018-05-22 Nichia Corporation Light-emitting element and method for producing the same
JP2018519662A (ja) * 2015-06-18 2018-07-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 窒化物半導体部品の製造方法および窒化物半導体部品
JP2018186213A (ja) * 2017-04-27 2018-11-22 スタンレー電気株式会社 垂直共振器型発光素子
US10347808B2 (en) 2015-08-31 2019-07-09 Nichia Corporation Light emitting device and method of manufacturing the light emitting device
JP7470361B2 (ja) 2020-01-16 2024-04-18 株式会社S-Nanotech Co-Creation 光電変換素子

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Cited By (47)

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Publication number Priority date Publication date Assignee Title
US9368681B2 (en) 2001-07-24 2016-06-14 Nichia Corporation Semiconductor light emitting device
US9865773B2 (en) 2001-07-24 2018-01-09 Nichia Corporation Semiconductor light emitting device
US10396242B2 (en) 2001-07-24 2019-08-27 Nichia Corporation Semiconductor light emitting device
US10593833B2 (en) 2001-07-24 2020-03-17 Nichia Corporation Semiconductor light emitting device
US7635875B2 (en) 2001-07-24 2009-12-22 Nichia Corporation Semiconductor light emitting device
US7504671B2 (en) 2003-03-14 2009-03-17 Sumitomo Electric Industries, Ltd. Semiconductor device
JPWO2004082034A1 (ja) * 2003-03-14 2006-06-15 住友電気工業株式会社 半導体装置
US7420223B2 (en) 2003-03-14 2008-09-02 Sumitomo Electric Industries, Ltd. Semiconductor device
US7335925B2 (en) 2003-03-14 2008-02-26 Sumitomo Electric Industries, Ltd. Semiconductor device
US7227879B2 (en) 2003-06-27 2007-06-05 Nichia Corporation Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
US7817692B2 (en) 2003-06-27 2010-10-19 Nichia Corporation Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
EP3166152A1 (fr) * 2003-08-19 2017-05-10 Nichia Corporation Diode électroluminescente semi-conductrice et son procédé de fabrication
WO2005018008A1 (fr) * 2003-08-19 2005-02-24 Nichia Corporation Dispositif a semi-conducteurs
EP3699963A1 (fr) * 2003-08-19 2020-08-26 Nichia Corporation Diode électroluminescente semi-conductrice et procédé de fabrication de son substrat
US7148514B2 (en) 2003-12-23 2006-12-12 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting diode and fabrication method thereof
JP2005228924A (ja) * 2004-02-13 2005-08-25 Toshiba Corp 半導体発光素子
JP5082444B2 (ja) * 2004-04-28 2012-11-28 三菱化学株式会社 窒化物半導体発光素子
WO2005106979A1 (fr) * 2004-04-28 2005-11-10 Mitsubishi Cable Industries, Ltd. Élément luminescent semi-conducteur à nitrure
JPWO2005106979A1 (ja) * 2004-04-28 2008-03-21 三菱電線工業株式会社 窒化物半導体発光素子
JP2007036078A (ja) * 2005-07-29 2007-02-08 Showa Denko Kk ｐｎ接合型発光ダイオード
US8338853B2 (en) 2005-08-25 2012-12-25 Toyota Jidosha Kabushiki Kaisha Substrate for forming light-emitting layer, light emitter and light-emitting substance
US7786502B2 (en) 2006-04-12 2010-08-31 Rohm Co., Ltd. Nitride semiconductor light-emitting device and method of manufacturing the same
WO2007117035A1 (fr) * 2006-04-12 2007-10-18 Rohm Co., Ltd. Element electroluminescent de nitrure semi-conducteur et son procede de fabrication
JP2008047854A (ja) * 2006-07-19 2008-02-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子
JP2014197704A (ja) * 2006-12-11 2014-10-16 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 発光デバイスおよび発光デバイスの作製方法
JP2009038355A (ja) * 2007-07-10 2009-02-19 Toyoda Gosei Co Ltd 発光装置
JP2009038377A (ja) * 2007-07-31 2009-02-19 Epivalley Co Ltd Ｉｉｉ族窒化物半導体発光素子
GB2454655A (en) * 2007-11-09 2009-05-20 Sharp Kk Nitride structures with AlInN current confinement layers
JP2010050318A (ja) * 2008-08-22 2010-03-04 Stanley Electric Co Ltd 半導体発光装置の製造方法及び半導体発光装置
US9899581B2 (en) 2009-12-09 2018-02-20 Lg Innotek Co., Ltd. Light emitting apparatus
EP2942823A1 (fr) * 2009-12-09 2015-11-11 LG Innotek Co., Ltd. Dispositif électroluminescent, procédé de fabrication du dispositif électroluminescent, paquet électroluminescent et système d'éclairage
US9911908B2 (en) 2009-12-09 2018-03-06 Lg Innotek Co., Ltd. Light emitting apparatus
US11335838B2 (en) 2009-12-09 2022-05-17 Suzhou Lekin Semiconductor Co., Ltd. Light emitting apparatus
US9281448B2 (en) 2009-12-09 2016-03-08 Lg Innotek Co., Ltd. Light emitting apparatus
EP2333852B1 (fr) * 2009-12-09 2019-03-27 LG Innotek Co., Ltd. Dispositif électroluminescent et paquet électroluminescent
JP2012209107A (ja) * 2011-03-29 2012-10-25 Nippon Zeon Co Ltd 面発光素子及び照明器具
US9112182B2 (en) 2011-03-29 2015-08-18 Zeon Corporation Light-emitting element and illuminating apparatus
WO2012133425A1 (fr) * 2011-03-29 2012-10-04 日本ゼオン株式会社 Élément d'émission de lumière et appareil d'éclairage
JP2012212508A (ja) * 2011-03-30 2012-11-01 Nippon Zeon Co Ltd 発光素子及び照明器具
JP2011233927A (ja) * 2011-08-02 2011-11-17 Oki Data Corp 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置
US10475959B2 (en) 2015-06-18 2019-11-12 Osram Opto Semiconductors Gmbh Method for producing a nitride semiconductor component, and a nitride semiconductor component
JP2018519662A (ja) * 2015-06-18 2018-07-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 窒化物半導体部品の製造方法および窒化物半導体部品
US10347808B2 (en) 2015-08-31 2019-07-09 Nichia Corporation Light emitting device and method of manufacturing the light emitting device
US10134944B2 (en) 2015-11-26 2018-11-20 Nichia Corporation Light-emitting element and method for producing the same
US9978903B2 (en) 2015-11-26 2018-05-22 Nichia Corporation Light-emitting element and method for producing the same
JP2018186213A (ja) * 2017-04-27 2018-11-22 スタンレー電気株式会社 垂直共振器型発光素子
JP7470361B2 (ja) 2020-01-16 2024-04-18 株式会社S-Nanotech Co-Creation 光電変換素子

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JP3956941B2 (ja) 2007-08-08

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