JP7470361B2 - 光電変換素子 - Google Patents
光電変換素子 Download PDFInfo
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- JP7470361B2 JP7470361B2 JP2020005113A JP2020005113A JP7470361B2 JP 7470361 B2 JP7470361 B2 JP 7470361B2 JP 2020005113 A JP2020005113 A JP 2020005113A JP 2020005113 A JP2020005113 A JP 2020005113A JP 7470361 B2 JP7470361 B2 JP 7470361B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 33
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 164
- 239000011787 zinc oxide Substances 0.000 claims description 79
- 239000004065 semiconductor Substances 0.000 claims description 73
- 239000002245 particle Substances 0.000 claims description 63
- 239000010419 fine particle Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000843 powder Substances 0.000 claims description 14
- 239000011230 binding agent Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 230000005525 hole transport Effects 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 231100001231 less toxic Toxicity 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
本発明の光電変換素子は、基板上に、共に酸化亜鉛(ZnO)を含む第1導電型の第1半導体層と、前記第1導電型と逆の第2導電型の第2半導体層とが上下方向で接してpn接合が形成された構成を具備する光電変換素子であって、前記第1半導体層、前記第2半導体層のうちの一方は、前記一方に対応した導電型のZnO微粒子を主とした粉体中に前記一方に対応した導電型と逆の導電型のZnO微粒子が混合された粉体を構成する平均粒径が50nm~500nmの範囲とされた微粒子が結合されて構成され、前記第1半導体層と前記第2半導体層との間には、前記pn接合が形成される領域に対応した開口が形成された絶縁層を具備し、前記第1半導体層、前記第2半導体層のうちの前記一方と接続される電極が、平面視において前記開口と重複しないように形成されたことを特徴とする。
本発明の光電変換素子は、平面視において、前記電極は、前記開口の周囲を囲む環状の形状を具備することを特徴とする。
本発明の光電変換素子は、基板上に、共に酸化亜鉛(ZnO)を含む第1導電型の第1半導体層と、前記第1導電型と逆の第2導電型の第2半導体層とが上下方向で接してpn接合が形成された構成を具備する光電変換素子であって、前記第1半導体層、前記第2半導体層のうちの一方は、前記一方に対応した導電型のZnO微粒子を主とした粉体中に前記一方に対応した導電型と逆の導電型のZnO微粒子が混合された粉体を構成する平均粒径が50nm~500nmの範囲とされた微粒子が結合されて構成され、厚さが5μm~10μm以下の範囲とされた層であり、前記第1半導体層、前記第2半導体層のうちの前記一方に電極が接続されたことを特徴とする。
本発明の光電変換素子において、前記第1半導体層、前記第2半導体層のうちの前記一方に対応した導電型はp型であることを特徴とする。
本発明の光電変換素子は、前記基板上に、n型の前記第1半導体層、前記第2半導体層、前記電極を順次具備することを特徴とする。
本発明の光電変換素子は、前記第1半導体層、前記第2半導体層のうちの前記一方と前記電極との間に、前記一方と同一の導電型であり、当該導電型のZnO微粒子と絶縁性のバインダーとが混合されて構成された電荷輸送層を具備することを特徴とする。
本発明の光電変換素子は、前記pn接合が順方向となるように前記第1半導体層、前記第2半導体層に電圧が印加された場合に、少なくとも前記第1半導体層、前記第2半導体層のいずれかが発光することを特徴とする。
本発明の光電変換素子において、前記基板は金属で構成され、前記基板がある側と反対側から光が取り出されることを特徴とする。
図1において、リーク電流の経路長は、p型層93の膜厚とほぼ等しい。このため、第1の実施の形態に係る発光素子においては、このようにリーク電流の経路を長く設定するために、第1の実施の形態に係る発光素子では、図1におけるp型層(第2半導体層)93が厚く設定される。このためには、p型層93を、p型ZnO微粒子931の平均粒径(50nm~500nm)よりも十分に厚くすることが有効である。一般的に薄膜層が厚くなればその厚さ方向の抵抗は膜厚に比例して大きくなるが、この場合には、前記のようにn型ZnO微粒子932を介した電流経路をp型ZnO微粒子931によって遮断することができるため、通常知られる薄膜の抵抗の単純な厚さ依存性よりも顕著に抵抗を増大させ、これによってリーク電流を低減することができる。この場合、p型ZnO微粒子931、n型ZnO微粒子932の平均粒径が前記の通りである場合、p型層93の厚さは5μm以上とすることが好ましい。ただし、これに伴い順方向抵抗も大きくなるため、この厚さは10μm以下とすることが好ましい。すなわち、p型層93を形成するにあたりp型ZnO微粒子931にn型ZnO微粒子932が微量混在する場合には、p型層93の厚さを5μm~10μmの範囲とすることが好ましい。
第2の実施の形態に係る光電変換素子においては、前記のリーク電流の経路をp型層の実際の厚さよりも長く設定することによって、リーク電流を減少させている。図3は、この発光素子1の構成を図1に対応させて示す図である。
11 基板
12 GZO層(透明電極)
13、92 n型層(第1半導体層)
14、93 p型層(第2半導体層)
15、94 n側電極
16、36、95 p側電極(電極)
17 ホール輸送層(電荷輸送層)
18 絶縁層
18A 開口
91 ガラス基板
171 バインダー
931 p型ZnO微粒子
932 n型ZnO微粒子
B 電源
Claims (8)
- 基板上に、共に酸化亜鉛(ZnO)を含む第1導電型の第1半導体層と、前記第1導電型と逆の第2導電型の第2半導体層とが上下方向で接してpn接合が形成された構成を具備する光電変換素子であって、
前記第1半導体層、前記第2半導体層のうちの一方は、前記一方に対応した導電型のZnO微粒子を主とした粉体中に前記一方に対応した導電型と逆の導電型のZnO微粒子が混合された粉体を構成する平均粒径が50nm~500nmの範囲とされた微粒子が結合されて構成され、
前記第1半導体層と前記第2半導体層との間には、前記pn接合が形成される領域に対応した開口が形成された絶縁層を具備し、
前記第1半導体層、前記第2半導体層のうちの前記一方と接続される電極が、平面視において前記開口と重複しないように形成されたことを特徴とする光電変換素子。 - 平面視において、前記電極は、前記開口の周囲を囲む環状の形状を具備することを特徴とする請求項1に記載の光電変換素子。
- 基板上に、共に酸化亜鉛(ZnO)を含む第1導電型の第1半導体層と、前記第1導電型と逆の第2導電型の第2半導体層とが上下方向で接してpn接合が形成された構成を具備する光電変換素子であって、
前記第1半導体層、前記第2半導体層のうちの一方は、前記一方に対応した導電型のZnO微粒子を主とした粉体中に前記一方に対応した導電型と逆の導電型のZnO微粒子が混合された粉体を構成する平均粒径が50nm~500nmの範囲とされた微粒子が結合されて構成され、厚さが5μm~10μm以下の範囲とされた層であり、
前記第1半導体層、前記第2半導体層のうちの前記一方に電極が接続されたことを特徴とする光電変換素子。 - 前記第1半導体層、前記第2半導体層のうちの前記一方に対応した導電型はp型であることを特徴とする請求項1から請求項3までのいずれか1項に記載の光電変換素子。
- 前記基板上に、n型の前記第1半導体層、前記第2半導体層、前記電極を順次具備することを特徴とする請求項4に記載の光電変換素子。
- 前記第1半導体層、前記第2半導体層のうちの前記一方と前記電極との間に、前記一方と同一の導電型であり、当該導電型のZnO微粒子と絶縁性のバインダーとが混合されて構成された電荷輸送層を具備することを特徴とする請求項1から請求項5までのいずれか1項に記載の光電変換素子。
- 前記pn接合が順方向となるように前記第1半導体層、前記第2半導体層に電圧が印加された場合に、少なくとも前記第1半導体層、前記第2半導体層のいずれかが発光することを特徴とする請求項1から請求項6までのいずれか1項に記載の光電変換素子。
- 前記基板は金属で構成され、前記基板がある側と反対側から光が取り出されることを特徴とする請求項7に記載の光電変換素子。
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