JP6162890B2 - マイクロ発光ダイオード - Google Patents
マイクロ発光ダイオード Download PDFInfo
- Publication number
- JP6162890B2 JP6162890B2 JP2016516928A JP2016516928A JP6162890B2 JP 6162890 B2 JP6162890 B2 JP 6162890B2 JP 2016516928 A JP2016516928 A JP 2016516928A JP 2016516928 A JP2016516928 A JP 2016516928A JP 6162890 B2 JP6162890 B2 JP 6162890B2
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- JP
- Japan
- Prior art keywords
- type semiconductor
- semiconductor layer
- emitting diode
- micro light
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 124
- 238000009792 diffusion process Methods 0.000 claims description 17
- 238000005215 recombination Methods 0.000 description 13
- 230000006798 recombination Effects 0.000 description 13
- 230000007547 defect Effects 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
の位置に拡散することはない。そのため、側面117に発生する非放射再結合が抑制され、マイクロ発光ダイオード100の発光効率が向上する。
蒸気又は機械的損傷を防止することができる。
Claims (17)
- 第1型半導体層と、
前記第1型半導体層に設けられる第2型半導体層と、
前記第2型半導体層に設けられており、少なくとも前記第2型半導体層の一部を露出するための少なくとも1つの開口を有し、前記開口の縁部と前記第2型半導体層の側面との間に、1マイクロメートル(μm)以上の第1の最短経路を有する第1の誘電体層と、
少なくとも前記第1の誘電体層の一部に設けられており、前記第1の誘電体層の前記開口を介して前記第2型半導体層の露出部に電気的に接続される第1の電極と、
を備え、
前記第1型半導体層は抵抗率(resistivity)ρ 1 と厚さt 1 を有し、前記第2型半導体層は抵抗率ρ 2 と厚さt 2 を有し、且つ
- 前記第1の誘電体層の前記開口の側面と前記第2型半導体層の側面との間に、1マイクロメートル(μm)以上の幾何加重平均距離を有する請求項1に記載のマイクロ発光ダイオード。
- 前記第1型半導体層はn型半導体層であり、前記第2型半導体層はp型半導体層である請求項1に記載のマイクロ発光ダイオード。
- 前記第1型半導体層の電流拡散長は、前記第2型半導体層の電流拡散長より20倍以上大きい請求項1に記載のマイクロ発光ダイオード。
- 前記第1型半導体層に設けられており、少なくとも前記第1型半導体層の一部を露出するための少なくとも1つの開口を有し、前記開口の縁部と前記第1型半導体層の側面との間に、1マイクロメートル(μm)以上の第2の最短経路を有する第2の誘電体層と、
前記第2の誘電体層の一部に設けられており、前記第2の誘電体層の前記開口を介して前記第1型半導体層の前記露出部に電気的に接続される第2の電極と、
を更に備える請求項1に記載のマイクロ発光ダイオード。 - 前記第1の誘電体層の前記開口の数は、1個〜1000個にある請求項1に記載のマイクロ発光ダイオード。
- 前記第1の誘電体層に垂直な方向から見る場合の前記第1の誘電体層の前記開口の面積は、前記第1の誘電体層に垂直な方向から見る場合の前記第1の誘電体層の合計面積の2.5%〜90%にある請求項1に記載のマイクロ発光ダイオード。
- 前記第1の誘電体層は、少なくとも前記第2型半導体層の前記第1型半導体層から離れる主表面の一部を覆う請求項1に記載のマイクロ発光ダイオード。
- 前記第1の誘電体層は、少なくとも前記第2型半導体層の側面の一部を覆う請求項8に記載のマイクロ発光ダイオード。
- 前記第1型半導体層と前記第2型半導体層との間に設けられており、少なくとも側面の一部が前記第1の誘電体層により覆われるアクティブ層を更に備える請求項9に記載のマイクロ発光ダイオード。
- 前記第1の誘電体層は、少なくとも前記第1型半導体層の側面の一部に覆う請求項10に記載のマイクロ発光ダイオード。
- 少なくとも前記第1型半導体層と前記第2型半導体層の一部が前記第1の電極と第2の電極との間に位置するように、少なくとも前記第1型半導体層の一部に設けられる第2の電極を更に備える請求項1に記載のマイクロ発光ダイオード。
- 前記第1型半導体層と前記第2型半導体層との間に設けられるアクティブ層を更に備え、
前記第1型半導体層、前記アクティブ層、前記第2型半導体層、及び前記開口を有する前記第1の誘電体層は、少なくとも2つの平面を有する塊体のような、組み合わせである請求項1に記載のマイクロ発光ダイオード。 - 前記第1型半導体層、前記アクティブ層、前記第2型半導体層及び前記開口を有する前記第1の誘電体層からなる前記組み合わせは、円柱体、多面体又は台形である請求項13に記載のマイクロ発光ダイオード。
- 前記第1の誘電体層の前記開口の数は、1個、2個又は3個である請求項1に記載のマイクロ発光ダイオード。
- 前記第1の誘電体層の複数の開口は、同じ形状を有する請求項1に記載のマイクロ発光ダイオード。
- 前記第1の誘電体層の複数の開口は、異なる形状を有する請求項1に記載のマイクロ発光ダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/290,999 | 2014-05-30 | ||
US14/290,999 US9105813B1 (en) | 2014-05-30 | 2014-05-30 | Micro-light-emitting diode |
PCT/CN2015/079957 WO2015180651A1 (en) | 2014-05-30 | 2015-05-27 | Micro-light-emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016536779A JP2016536779A (ja) | 2016-11-24 |
JP6162890B2 true JP6162890B2 (ja) | 2017-07-12 |
Family
ID=53763334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016516928A Active JP6162890B2 (ja) | 2014-05-30 | 2015-05-27 | マイクロ発光ダイオード |
Country Status (5)
Country | Link |
---|---|
US (1) | US9105813B1 (ja) |
EP (1) | EP3149780B1 (ja) |
JP (1) | JP6162890B2 (ja) |
CN (1) | CN105355733B (ja) |
WO (1) | WO2015180651A1 (ja) |
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-
2014
- 2014-05-30 US US14/290,999 patent/US9105813B1/en active Active
-
2015
- 2015-05-20 CN CN201510258848.9A patent/CN105355733B/zh active Active
- 2015-05-27 JP JP2016516928A patent/JP6162890B2/ja active Active
- 2015-05-27 WO PCT/CN2015/079957 patent/WO2015180651A1/en active Application Filing
- 2015-05-27 EP EP15798982.3A patent/EP3149780B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016536779A (ja) | 2016-11-24 |
US9105813B1 (en) | 2015-08-11 |
WO2015180651A1 (en) | 2015-12-03 |
EP3149780B1 (en) | 2022-03-16 |
EP3149780A1 (en) | 2017-04-05 |
EP3149780A4 (en) | 2017-10-25 |
CN105355733B (zh) | 2018-10-19 |
CN105355733A (zh) | 2016-02-24 |
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