NL7900756A - Heterostructuur laser. - Google Patents

Heterostructuur laser.

Info

Publication number
NL7900756A
NL7900756A NL7900756A NL7900756A NL7900756A NL 7900756 A NL7900756 A NL 7900756A NL 7900756 A NL7900756 A NL 7900756A NL 7900756 A NL7900756 A NL 7900756A NL 7900756 A NL7900756 A NL 7900756A
Authority
NL
Netherlands
Prior art keywords
heterostructure laser
heterostructure
laser
Prior art date
Application number
NL7900756A
Other languages
English (en)
Original Assignee
Int Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Standard Electric Corp filed Critical Int Standard Electric Corp
Publication of NL7900756A publication Critical patent/NL7900756A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7900756A 1978-02-14 1979-01-31 Heterostructuur laser. NL7900756A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5811/78A GB1570479A (en) 1978-02-14 1978-02-14 Heterostructure laser

Publications (1)

Publication Number Publication Date
NL7900756A true NL7900756A (nl) 1979-08-16

Family

ID=9803054

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7900756A NL7900756A (nl) 1978-02-14 1979-01-31 Heterostructuur laser.

Country Status (6)

Country Link
US (1) US4251298A (nl)
AU (1) AU531085B2 (nl)
DE (1) DE2903942A1 (nl)
FR (1) FR2417195A1 (nl)
GB (1) GB1570479A (nl)
NL (1) NL7900756A (nl)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
US4335461A (en) * 1980-08-25 1982-06-15 Xerox Corporation Injection lasers with lateral spatial thickness variations (LSTV) in the active layer
US4447904A (en) * 1981-02-04 1984-05-08 Xerox Corporation Semiconductor devices with nonplanar characteristics produced in chemical vapor deposition
US4448797A (en) * 1981-02-04 1984-05-15 Xerox Corporation Masking techniques in chemical vapor deposition
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4371968A (en) * 1981-07-01 1983-02-01 The United States Of America As Represented By The Secretary Of The Army Monolithic injection laser arrays formed by crystal regrowth techniques
US4534033A (en) * 1981-08-25 1985-08-06 Handotal Kenkyu Shinkokai Three terminal semiconductor laser
FR2528234A1 (fr) * 1982-06-04 1983-12-09 Thomson Csf Dispositif semi-conducteur photoemetteur de type laser a guidage par gradient d'indice, et procede de realisation d'un tel dispositif
GB2123604B (en) * 1982-06-29 1985-12-18 Standard Telephones Cables Ltd Injection laser manufacture
JPS599990A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp 半導体レ−ザの製造方法
US4509996A (en) * 1982-11-05 1985-04-09 International Standard Electric Corporation Injection laser manufacture
JPS59215785A (ja) * 1983-05-24 1984-12-05 Matsushita Electric Ind Co Ltd 半導体レ−ザ
JPS60501634A (ja) * 1983-06-17 1985-09-26 ア−ルシ−エ−　コ−ポレ−ション 平担な活性層を有するレーザ・アレーの製造方法
US4547396A (en) * 1983-06-17 1985-10-15 Rca Corporation Method of making a laser array
JPS60102790A (ja) * 1983-11-09 1985-06-06 Mitsubishi Electric Corp 半導体発光装置の製造方法
DE3435148A1 (de) * 1984-09-25 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode
US4644381A (en) * 1985-04-08 1987-02-17 Siemens Corporate Research & Support, Inc. I2 L heterostructure bipolar transistors and method of making the same
JPH07112091B2 (ja) * 1986-03-06 1995-11-29 株式会社東芝 埋め込み型半導体レ−ザの製造方法
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
DE3714523A1 (de) * 1987-04-30 1988-11-10 Siemens Ag Laserdiode mit vergrabener aktiver schicht und seitlicher strombegrenzung und verfahren zu deren herstellung
JPH01235397A (ja) * 1988-03-16 1989-09-20 Mitsubishi Electric Corp 半導体レーザ
JP3517091B2 (ja) * 1997-07-04 2004-04-05 東芝電子エンジニアリング株式会社 窒化ガリウム系半導体発光素子およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2300440A (en) * 1939-02-15 1942-11-03 Ohio Corrugating Company Container
US2315785A (en) * 1939-06-26 1943-04-06 William H Greenleaf Safety shaving device
US4033796A (en) * 1975-06-23 1977-07-05 Xerox Corporation Method of making buried-heterostructure diode injection laser

Also Published As

Publication number Publication date
FR2417195A1 (fr) 1979-09-07
FR2417195B1 (nl) 1985-02-15
AU531085B2 (en) 1983-08-11
GB1570479A (en) 1980-07-02
DE2903942A1 (de) 1979-08-23
US4251298A (en) 1981-02-17
AU4407079A (en) 1979-08-23

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BV The patent application has lapsed