GB2123604B - Injection laser manufacture - Google Patents
Injection laser manufactureInfo
- Publication number
- GB2123604B GB2123604B GB08231655A GB8231655A GB2123604B GB 2123604 B GB2123604 B GB 2123604B GB 08231655 A GB08231655 A GB 08231655A GB 8231655 A GB8231655 A GB 8231655A GB 2123604 B GB2123604 B GB 2123604B
- Authority
- GB
- United Kingdom
- Prior art keywords
- injection laser
- laser manufacture
- manufacture
- injection
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08231655A GB2123604B (en) | 1982-06-29 | 1982-11-05 | Injection laser manufacture |
DE19833322531 DE3322531A1 (en) | 1982-06-29 | 1983-06-23 | METHOD FOR PRODUCING AN INJECTION LASER |
US06/508,293 US4509996A (en) | 1982-11-05 | 1983-06-24 | Injection laser manufacture |
FR8310634A FR2529399A1 (en) | 1982-06-29 | 1983-06-28 | METHOD FOR MANUFACTURING INJECTION LASER |
JP58116284A JPS5956787A (en) | 1982-06-29 | 1983-06-29 | Method of producing injection laser |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8218752 | 1982-06-29 | ||
GB08231655A GB2123604B (en) | 1982-06-29 | 1982-11-05 | Injection laser manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2123604A GB2123604A (en) | 1984-02-01 |
GB2123604B true GB2123604B (en) | 1985-12-18 |
Family
ID=26283210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08231655A Expired GB2123604B (en) | 1982-06-29 | 1982-11-05 | Injection laser manufacture |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE3322531A1 (en) |
FR (1) | FR2529399A1 (en) |
GB (1) | GB2123604B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8518353D0 (en) * | 1985-07-20 | 1985-08-29 | Plessey Co Plc | Heterostructure device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1065460A (en) * | 1975-06-23 | 1979-10-30 | Robert D. Burnham | Buried-heterostructure diode injection laser |
GB1530323A (en) * | 1975-12-22 | 1978-10-25 | Standard Telephones Cables Ltd | Semiconductor waveguide structures |
GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
JPS5723292A (en) * | 1980-07-16 | 1982-02-06 | Sony Corp | Semiconductor laser device and manufacture thereof |
-
1982
- 1982-11-05 GB GB08231655A patent/GB2123604B/en not_active Expired
-
1983
- 1983-06-23 DE DE19833322531 patent/DE3322531A1/en not_active Withdrawn
- 1983-06-28 FR FR8310634A patent/FR2529399A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2123604A (en) | 1984-02-01 |
FR2529399A1 (en) | 1983-12-30 |
DE3322531A1 (en) | 1983-12-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19941105 |