NL7900225A - Injectie-laser. - Google Patents
Injectie-laser.Info
- Publication number
- NL7900225A NL7900225A NL7900225A NL7900225A NL7900225A NL 7900225 A NL7900225 A NL 7900225A NL 7900225 A NL7900225 A NL 7900225A NL 7900225 A NL7900225 A NL 7900225A NL 7900225 A NL7900225 A NL 7900225A
- Authority
- NL
- Netherlands
- Prior art keywords
- injection laser
- laser
- injection
- Prior art date
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/869,190 US4185256A (en) | 1978-01-13 | 1978-01-13 | Mode control of heterojunction injection lasers and method of fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7900225A true NL7900225A (nl) | 1979-07-17 |
Family
ID=25353090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7900225A NL7900225A (nl) | 1978-01-13 | 1979-01-11 | Injectie-laser. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4185256A (nl) |
JP (3) | JPS5846075B2 (nl) |
CA (1) | CA1100216A (nl) |
NL (1) | NL7900225A (nl) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1127282A (en) * | 1978-05-22 | 1982-07-06 | Takashi Sugino | Semiconductor laser and method of making the same |
US4347486A (en) * | 1979-10-12 | 1982-08-31 | Rca Corporation | Single filament semiconductor laser with large emitting area |
US4347612A (en) * | 1980-08-25 | 1982-08-31 | Xerox Corporation | Semiconductor injection laser for high speed modulation |
JPS57115892A (en) * | 1981-01-12 | 1982-07-19 | Agency Of Ind Science & Technol | Semiconductor laser element |
NL8101409A (nl) * | 1981-03-23 | 1982-10-18 | Philips Nv | Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
JPS586191A (ja) * | 1981-07-03 | 1983-01-13 | Hitachi Ltd | 半導体レ−ザ装置 |
JPS58132986A (ja) * | 1982-02-03 | 1983-08-08 | Hitachi Ltd | 半導体レ−ザ装置 |
GB2129211B (en) * | 1982-10-21 | 1987-01-14 | Rca Corp | Semiconductor laser and a method of making same |
FR2535121B1 (fr) * | 1982-10-25 | 1989-01-06 | Rca Corp | Laser a semi-conducteur et son procede de fabrication |
JPS59181317A (ja) * | 1983-03-31 | 1984-10-15 | Sumitomo Electric Ind Ltd | 光変調素子 |
NL8301331A (nl) * | 1983-04-15 | 1984-11-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan. |
JPS61102087A (ja) * | 1984-10-25 | 1986-05-20 | Sharp Corp | 半導体レ−ザ装置 |
JPS61222188A (ja) * | 1985-02-28 | 1986-10-02 | Sharp Corp | 半導体レ−ザアレイ素子 |
JPS6225485A (ja) * | 1985-07-25 | 1987-02-03 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
JPS6235689A (ja) * | 1985-08-09 | 1987-02-16 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS6297467U (nl) * | 1985-12-10 | 1987-06-22 | ||
DE3703905A1 (de) * | 1986-02-13 | 1987-08-27 | Sharp Kk | Fenster-halbleiterlaser und verfahren zu dessen herstellung |
JP2539406B2 (ja) * | 1987-02-04 | 1996-10-02 | 株式会社日立製作所 | 固体光ピツクアツプ |
JPH01199486A (ja) * | 1988-07-15 | 1989-08-10 | Hitachi Ltd | 半導体レーザー素子 |
US4906837A (en) * | 1988-09-26 | 1990-03-06 | The Boeing Company | Multi-channel waveguide optical sensor |
EP0415225B1 (de) * | 1989-09-01 | 1998-03-18 | Siemens Aktiengesellschaft | Integriert optische Anordnung mit wenigstens einem auf einem Substrat aus Halbleitermaterial integrierten optischen Wellenleiter |
FR2663435B1 (fr) * | 1990-06-13 | 1992-09-11 | Commissariat Energie Atomique | Filtre optique spatial monomode integre et son procede de fabrication. |
US5276699A (en) * | 1992-11-05 | 1994-01-04 | Eastman Kodak Company | Depressed-index ridge waveguide laser diode containing a stabilizing region |
US5307361A (en) * | 1992-11-05 | 1994-04-26 | Eastman Kodak Company | Ridge waveguide laser diode with a depressed-index cladding layer |
JPH09289352A (ja) * | 1996-02-22 | 1997-11-04 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
JP2009054636A (ja) * | 2007-08-23 | 2009-03-12 | Panasonic Corp | 半導体レーザ装置の製造方法および半導体レーザバーの検査方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5411117B2 (nl) * | 1972-02-23 | 1979-05-11 | ||
US3993963A (en) * | 1974-06-20 | 1976-11-23 | Bell Telephone Laboratories, Incorporated | Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same |
US3948583A (en) * | 1974-12-09 | 1976-04-06 | Bell Telephone Laboratories, Incorporated | Isolation of passive devices and integration with active devices in optical waveguiding circuits |
JPS5442592B2 (nl) * | 1975-02-18 | 1979-12-14 | ||
US3978426A (en) * | 1975-03-11 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Heterostructure devices including tapered optical couplers |
JPS5299792A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Production of semiconductor light emitting device |
US4326176A (en) * | 1976-04-16 | 1982-04-20 | Hitachi, Ltd. | Semiconductor laser device |
JPS52127085A (en) * | 1976-04-16 | 1977-10-25 | Hitachi Ltd | Semiconductor laser |
-
1978
- 1978-01-13 US US05/869,190 patent/US4185256A/en not_active Expired - Lifetime
- 1978-10-30 CA CA314,962A patent/CA1100216A/en not_active Expired
- 1978-12-19 JP JP53156766A patent/JPS5846075B2/ja not_active Expired
-
1979
- 1979-01-11 NL NL7900225A patent/NL7900225A/nl not_active Application Discontinuation
-
1983
- 1983-05-31 JP JP58096854A patent/JPS59988A/ja active Granted
- 1983-05-31 JP JP58096855A patent/JPS58222588A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA1100216A (en) | 1981-04-28 |
US4185256A (en) | 1980-01-22 |
JPS58222588A (ja) | 1983-12-24 |
JPS5846075B2 (ja) | 1983-10-14 |
JPS6327879B2 (nl) | 1988-06-06 |
JPS54101686A (en) | 1979-08-10 |
JPS59988A (ja) | 1984-01-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |