DE3782462T2 - Laserdiode mit verteilter rueckkopplung. - Google Patents

Laserdiode mit verteilter rueckkopplung.

Info

Publication number
DE3782462T2
DE3782462T2 DE8787110685T DE3782462T DE3782462T2 DE 3782462 T2 DE3782462 T2 DE 3782462T2 DE 8787110685 T DE8787110685 T DE 8787110685T DE 3782462 T DE3782462 T DE 3782462T DE 3782462 T2 DE3782462 T2 DE 3782462T2
Authority
DE
Germany
Prior art keywords
laser diode
distributed feedback
feedback
distributed
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787110685T
Other languages
English (en)
Other versions
DE3782462D1 (de
Inventor
Mito C O Nec Corporation Ikuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3782462D1 publication Critical patent/DE3782462D1/de
Application granted granted Critical
Publication of DE3782462T2 publication Critical patent/DE3782462T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
DE8787110685T 1986-07-25 1987-07-23 Laserdiode mit verteilter rueckkopplung. Expired - Lifetime DE3782462T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61176016A JPS6332988A (ja) 1986-07-25 1986-07-25 分布帰還形半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE3782462D1 DE3782462D1 (de) 1992-12-10
DE3782462T2 true DE3782462T2 (de) 1993-05-27

Family

ID=16006244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787110685T Expired - Lifetime DE3782462T2 (de) 1986-07-25 1987-07-23 Laserdiode mit verteilter rueckkopplung.

Country Status (4)

Country Link
US (1) US4794618A (de)
EP (1) EP0254311B1 (de)
JP (1) JPS6332988A (de)
DE (1) DE3782462T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8801667A (nl) * 1988-07-01 1990-02-01 Philips Nv Fi - coating voor dfb/dbr laserdiodes.
US4952019A (en) * 1988-10-27 1990-08-28 General Electric Company Grating-coupled surface-emitting superluminescent device
US5469459A (en) * 1993-01-08 1995-11-21 Nec Corporation Laser diode element with excellent intermodulation distortion characteristic
JP3186705B2 (ja) 1998-08-27 2001-07-11 日本電気株式会社 分布帰還型半導体レーザ
US6574261B2 (en) 1998-08-27 2003-06-03 Nec Corporation Distributed feedback semiconductor laser
JP3778260B2 (ja) * 2000-08-16 2006-05-24 日本電気株式会社 半導体レーザとこれを用いたデジタル光通信システムと方法
JP2003133638A (ja) * 2001-08-14 2003-05-09 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子及びレーザモジュール
US6856731B2 (en) * 2003-04-10 2005-02-15 Lucent Technologies Inc. Heat tunable optical devices with linearity compensation
JP4325558B2 (ja) * 2005-01-05 2009-09-02 住友電気工業株式会社 半導体レーザ、および半導体レーザを作製する方法
JP4884081B2 (ja) 2006-05-30 2012-02-22 ルネサスエレクトロニクス株式会社 分布帰還型半導体レーザ
KR20130120266A (ko) * 2012-04-25 2013-11-04 한국전자통신연구원 분포 궤환형 레이저 다이오드
JP6183122B2 (ja) * 2013-10-02 2017-08-23 富士通株式会社 光半導体素子、光半導体素子アレイ、光送信モジュール及び光伝送システム
US10680409B2 (en) 2018-03-07 2020-06-09 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Laser device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5858784A (ja) * 1981-10-05 1983-04-07 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
CA1196078A (en) * 1981-12-07 1985-10-29 Masafumi Seki Double channel planar buried heterostructure laser with periodic structure formed in guide layer
JPS59198786A (ja) * 1983-04-26 1984-11-10 Nec Corp 分布帰還型半導体レ−ザ
JPS60178685A (ja) * 1984-02-27 1985-09-12 Nippon Telegr & Teleph Corp <Ntt> 単一軸モ−ド半導体レ−ザ装置
JPS6147685A (ja) * 1984-08-15 1986-03-08 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ

Also Published As

Publication number Publication date
JPS6332988A (ja) 1988-02-12
US4794618A (en) 1988-12-27
DE3782462D1 (de) 1992-12-10
EP0254311A3 (en) 1988-10-05
EP0254311A2 (de) 1988-01-27
EP0254311B1 (de) 1992-11-04

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