FR2592239B1 - Laser a semi-conducteur a contre-reaction repartie avec moniteur. - Google Patents

Laser a semi-conducteur a contre-reaction repartie avec moniteur.

Info

Publication number
FR2592239B1
FR2592239B1 FR8617959A FR8617959A FR2592239B1 FR 2592239 B1 FR2592239 B1 FR 2592239B1 FR 8617959 A FR8617959 A FR 8617959A FR 8617959 A FR8617959 A FR 8617959A FR 2592239 B1 FR2592239 B1 FR 2592239B1
Authority
FR
France
Prior art keywords
monitor
semiconductor laser
distributed feedback
feedback
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8617959A
Other languages
English (en)
Other versions
FR2592239A1 (fr
Inventor
Akida Et Masashi Usami Shigeyuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Publication of FR2592239A1 publication Critical patent/FR2592239A1/fr
Application granted granted Critical
Publication of FR2592239B1 publication Critical patent/FR2592239B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
FR8617959A 1985-12-25 1986-12-22 Laser a semi-conducteur a contre-reaction repartie avec moniteur. Expired - Fee Related FR2592239B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60290846A JPH06105820B2 (ja) 1985-12-25 1985-12-25 モニタ付分布帰還形半導体レ−ザ

Publications (2)

Publication Number Publication Date
FR2592239A1 FR2592239A1 (fr) 1987-06-26
FR2592239B1 true FR2592239B1 (fr) 1994-01-07

Family

ID=17761237

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8617959A Expired - Fee Related FR2592239B1 (fr) 1985-12-25 1986-12-22 Laser a semi-conducteur a contre-reaction repartie avec moniteur.

Country Status (5)

Country Link
US (1) US4788690A (fr)
JP (1) JPH06105820B2 (fr)
CA (1) CA1265863C (fr)
FR (1) FR2592239B1 (fr)
GB (1) GB2184888B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2197122B (en) * 1986-11-03 1990-01-24 Stc Plc Injection laser and monitor photosensor combination
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JP2723522B2 (ja) * 1987-09-25 1998-03-09 日本電気株式会社 半導体レーザ
FR2639773B1 (fr) * 1988-11-25 1994-05-13 Alcatel Nv Laser a semi-conducteur accordable
US5177758A (en) * 1989-06-14 1993-01-05 Hitachi, Ltd. Semiconductor laser device with plural active layers and changing optical properties
US4995049A (en) * 1990-05-29 1991-02-19 Eastman Kodak Company Optoelectronic integrated circuit
NL9100103A (nl) * 1991-01-23 1992-08-17 Philips Nv Halfgeleiderdiodelaser met monitordiode.
US5391896A (en) * 1992-09-02 1995-02-21 Midwest Research Institute Monolithic multi-color light emission/detection device
GB2387481B (en) * 2002-04-10 2005-08-31 Intense Photonics Ltd Integrated active photonic device and photodetector
KR100594108B1 (ko) * 2005-01-21 2006-06-30 삼성전자주식회사 단일 모드 분포 귀환 레이저
JP5540360B2 (ja) * 2011-03-08 2014-07-02 日本電信電話株式会社 光パワーモニタ集積ｄｆｂレーザ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789289A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor device
JPS5875877A (ja) * 1981-10-30 1983-05-07 Nec Corp モニタ内蔵半導体レ−ザ素子
JPS5886788A (ja) * 1981-11-18 1983-05-24 Nec Corp 半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS58186986A (ja) * 1982-04-27 1983-11-01 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JPS6079788A (ja) * 1983-10-06 1985-05-07 Nec Corp 光双安定素子
JPS60202974A (ja) * 1983-10-18 1985-10-14 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ

Also Published As

Publication number Publication date
FR2592239A1 (fr) 1987-06-26
GB8630069D0 (en) 1987-01-28
CA1265863A (fr) 1990-02-13
GB2184888A (en) 1987-07-01
GB2184888B (en) 1989-11-01
JPH06105820B2 (ja) 1994-12-21
JPS62150895A (ja) 1987-07-04
CA1265863C (fr) 1990-02-13
US4788690A (en) 1988-11-29

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20060831