DE68918062D1 - Halbleitervorrichtung mit einer Zwischenschicht zur Einschnürung eines Strompfades während umgekehrter Vorspannung. - Google Patents

Halbleitervorrichtung mit einer Zwischenschicht zur Einschnürung eines Strompfades während umgekehrter Vorspannung.

Info

Publication number
DE68918062D1
DE68918062D1 DE68918062T DE68918062T DE68918062D1 DE 68918062 D1 DE68918062 D1 DE 68918062D1 DE 68918062 T DE68918062 T DE 68918062T DE 68918062 T DE68918062 T DE 68918062T DE 68918062 D1 DE68918062 D1 DE 68918062D1
Authority
DE
Germany
Prior art keywords
constricting
semiconductor device
intermediate layer
current path
reverse bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918062T
Other languages
English (en)
Other versions
DE68918062T2 (de
Inventor
Naomasa C O Intellectua Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68918062D1 publication Critical patent/DE68918062D1/de
Application granted granted Critical
Publication of DE68918062T2 publication Critical patent/DE68918062T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE68918062T 1988-12-02 1989-12-01 Halbleitervorrichtung mit einer Zwischenschicht zur Einschnürung eines Strompfades während umgekehrter Vorspannung. Expired - Fee Related DE68918062T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63305767A JP2667477B2 (ja) 1988-12-02 1988-12-02 ショットキーバリアダイオード

Publications (2)

Publication Number Publication Date
DE68918062D1 true DE68918062D1 (de) 1994-10-13
DE68918062T2 DE68918062T2 (de) 1995-03-02

Family

ID=17949103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918062T Expired - Fee Related DE68918062T2 (de) 1988-12-02 1989-12-01 Halbleitervorrichtung mit einer Zwischenschicht zur Einschnürung eines Strompfades während umgekehrter Vorspannung.

Country Status (5)

Country Link
US (1) US5017976A (de)
EP (1) EP0372428B1 (de)
JP (1) JP2667477B2 (de)
KR (1) KR920010677B1 (de)
DE (1) DE68918062T2 (de)

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JP3602242B2 (ja) * 1996-02-14 2004-12-15 株式会社ルネサステクノロジ 半導体装置
JP3779366B2 (ja) * 1996-02-21 2006-05-24 株式会社東芝 半導体装置及びその製造方法
DE19723176C1 (de) * 1997-06-03 1998-08-27 Daimler Benz Ag Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
US6362495B1 (en) 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes
AU5154300A (en) * 1999-05-28 2000-12-18 Advanced Power Devices, Inc. Discrete schottky diode device with reduced leakage current
US6717229B2 (en) 2000-01-19 2004-04-06 Fabtech, Inc. Distributed reverse surge guard
EP1119055A1 (de) * 2000-01-19 2001-07-25 Fabtech, Inc. Verteilter Rückpendelschutz
AU2000267698A1 (en) * 2000-01-19 2001-07-31 Fabtech, Inc. Distributed reverse surge guard
US6525389B1 (en) * 2000-02-22 2003-02-25 International Rectifier Corporation High voltage termination with amorphous silicon layer below the field plate
US6486524B1 (en) * 2000-02-22 2002-11-26 International Rectifier Corporation Ultra low Irr fast recovery diode
US6699775B2 (en) * 2000-02-22 2004-03-02 International Rectifier Corporation Manufacturing process for fast recovery diode
DE10015884A1 (de) * 2000-03-30 2001-10-11 Philips Corp Intellectual Pty Schottky-Diode
JP3860705B2 (ja) * 2000-03-31 2006-12-20 新電元工業株式会社 半導体装置
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
SE0101848D0 (sv) * 2001-05-25 2001-05-25 Abb Research Ltd A method concerning a junction barrier Schottky diode, such a diode and use thereof
JP4810776B2 (ja) * 2001-08-03 2011-11-09 富士電機株式会社 半導体装置
GB0120595D0 (en) * 2001-08-24 2001-10-17 Koninkl Philips Electronics Nv A semiconductor rectifier
JP2003068760A (ja) * 2001-08-29 2003-03-07 Denso Corp 炭化珪素半導体装置およびその製造方法
EP2259325B1 (de) * 2002-02-20 2013-12-25 Shindengen Electric Manufacturing Co., Ltd. Transistoranordnung
JP2005191227A (ja) * 2003-12-25 2005-07-14 Sanyo Electric Co Ltd 半導体装置
JP4610207B2 (ja) * 2004-02-24 2011-01-12 三洋電機株式会社 半導体装置およびその製造方法
KR100621370B1 (ko) * 2004-06-08 2006-09-08 삼성전자주식회사 쇼트키 다이오드를 포함한 집적회로구조물 및 그 제조방법
US7436022B2 (en) * 2005-02-11 2008-10-14 Alpha & Omega Semiconductors, Ltd. Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
JP4902996B2 (ja) * 2006-01-12 2012-03-21 新電元工業株式会社 樹脂封止型ダイオード及び倍電圧整流回路
JP2007281231A (ja) * 2006-04-07 2007-10-25 Shindengen Electric Mfg Co Ltd 半導体装置
GB0611594D0 (en) * 2006-06-13 2006-07-19 Taylor Gareth A Electrical switching device and method of embedding catalytic material in a diamond substrate
US8384181B2 (en) 2007-02-09 2013-02-26 Cree, Inc. Schottky diode structure with silicon mesa and junction barrier Schottky wells
JP4396724B2 (ja) * 2007-04-18 2010-01-13 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置
US8368166B2 (en) * 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
TW200847448A (en) * 2007-05-30 2008-12-01 Intersil Inc Junction barrier schottky diode
JP4333782B2 (ja) * 2007-07-05 2009-09-16 株式会社デンソー ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置
JP5368722B2 (ja) * 2008-03-28 2013-12-18 新電元工業株式会社 半導体装置
JP5169428B2 (ja) * 2008-04-17 2013-03-27 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US7897471B2 (en) * 2008-06-19 2011-03-01 Fairchild Semiconductor Corporation Method and apparatus to improve the reliability of the breakdown voltage in high voltage devices
US7750412B2 (en) * 2008-08-06 2010-07-06 Fairchild Semiconductor Corporation Rectifier with PN clamp regions under trenches
JP5358141B2 (ja) * 2008-08-12 2013-12-04 新電元工業株式会社 半導体装置
TW201034205A (en) * 2009-03-04 2010-09-16 Actron Technology Corp Rectifier used in high temperature application
DE102009018971A1 (de) * 2009-04-25 2010-11-04 Secos Halbleitertechnologie Gmbh Konstruktion einer Schottkydiode mit verbessertem Hochstromverhalten und Verfahren zu deren Herstellung
US9117739B2 (en) * 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
JP5269015B2 (ja) * 2010-09-08 2013-08-21 株式会社東芝 半導体装置及び半導体装置の製造方法
WO2012081664A1 (ja) * 2010-12-17 2012-06-21 富士電機株式会社 半導体装置およびその製造方法
JP5306392B2 (ja) * 2011-03-03 2013-10-02 株式会社東芝 半導体整流装置
US8937319B2 (en) * 2011-03-07 2015-01-20 Shindengen Electric Manufacturing Co., Ltd. Schottky barrier diode
JP5512581B2 (ja) * 2011-03-24 2014-06-04 株式会社東芝 半導体装置
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
JP6028676B2 (ja) 2013-05-21 2016-11-16 住友電気工業株式会社 炭化珪素半導体装置
US9029974B2 (en) * 2013-09-11 2015-05-12 Infineon Technologies Ag Semiconductor device, junction field effect transistor and vertical field effect transistor
JP2015216200A (ja) * 2014-05-09 2015-12-03 株式会社豊田中央研究所 半導体装置
US20160035899A1 (en) * 2014-07-30 2016-02-04 Qualcomm Incorporated Biasing a silicon-on-insulator (soi) substrate to enhance a depletion region
EP3067935A1 (de) * 2015-03-10 2016-09-14 ABB Technology AG Leistungshalbleitergleichrichter mit steuerbarer Einschaltzustandsspannung
DE102016013542A1 (de) 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH Stapelförmige Schottky-Diode
US10147785B2 (en) 2017-01-26 2018-12-04 Semiconductor Components Industries, Llc High-voltage superjunction field effect transistor

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Also Published As

Publication number Publication date
US5017976A (en) 1991-05-21
JPH02151067A (ja) 1990-06-11
DE68918062T2 (de) 1995-03-02
KR920010677B1 (ko) 1992-12-12
JP2667477B2 (ja) 1997-10-27
EP0372428B1 (de) 1994-09-07
KR900011017A (ko) 1990-07-11
EP0372428A1 (de) 1990-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee