AU5154300A - Discrete schottky diode device with reduced leakage current - Google Patents

Discrete schottky diode device with reduced leakage current

Info

Publication number
AU5154300A
AU5154300A AU51543/00A AU5154300A AU5154300A AU 5154300 A AU5154300 A AU 5154300A AU 51543/00 A AU51543/00 A AU 51543/00A AU 5154300 A AU5154300 A AU 5154300A AU 5154300 A AU5154300 A AU 5154300A
Authority
AU
Australia
Prior art keywords
leakage current
schottky diode
diode device
reduced leakage
discrete schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU51543/00A
Inventor
Wayne Y. W. Hsueh
Vladimir Rodov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Power Devices Inc
Original Assignee
Advanced Power Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Power Devices Inc filed Critical Advanced Power Devices Inc
Publication of AU5154300A publication Critical patent/AU5154300A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66212—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
AU51543/00A 1999-05-28 2000-05-22 Discrete schottky diode device with reduced leakage current Abandoned AU5154300A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32231399A 1999-05-28 1999-05-28
US09322313 1999-05-28
PCT/US2000/014094 WO2000074130A1 (en) 1999-05-28 2000-05-22 Discrete schottky diode device with reduced leakage current

Publications (1)

Publication Number Publication Date
AU5154300A true AU5154300A (en) 2000-12-18

Family

ID=23254325

Family Applications (1)

Application Number Title Priority Date Filing Date
AU51543/00A Abandoned AU5154300A (en) 1999-05-28 2000-05-22 Discrete schottky diode device with reduced leakage current

Country Status (3)

Country Link
AU (1) AU5154300A (en)
TW (1) TW457598B (en)
WO (1) WO2000074130A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3860705B2 (en) * 2000-03-31 2006-12-20 新電元工業株式会社 Semiconductor device
DE10259373B4 (en) * 2002-12-18 2012-03-22 Infineon Technologies Ag Overcurrent Schottky diode with low reverse current
DE102011087591A1 (en) * 2011-12-01 2013-06-06 Robert Bosch Gmbh High-voltage trench junction barrier Schottky
CN102790097B (en) * 2012-08-10 2014-08-06 江苏能华微电子科技发展有限公司 Power diode device and preparation method thereof
DE102016013542A1 (en) * 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH Stacked Schottky diode
DE102017011878A1 (en) * 2017-12-21 2019-06-27 3-5 Power Electronics GmbH Stacked III-V semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649890A (en) * 1969-12-31 1972-03-14 Microwave Ass High burnout resistance schottky barrier diode
JP2667477B2 (en) * 1988-12-02 1997-10-27 株式会社東芝 Schottky barrier diode
US5278443A (en) * 1990-02-28 1994-01-11 Hitachi, Ltd. Composite semiconductor device with Schottky and pn junctions
US5430314A (en) * 1992-04-23 1995-07-04 Siliconix Incorporated Power device with buffered gate shield region
US5960286A (en) * 1994-02-22 1999-09-28 Kabushiki Kaisha Toshiba Method of manufacturing power semiconductor devices
JP3632344B2 (en) * 1997-01-06 2005-03-23 日産自動車株式会社 Semiconductor device

Also Published As

Publication number Publication date
WO2000074130A9 (en) 2001-03-08
WO2000074130A1 (en) 2000-12-07
TW457598B (en) 2001-10-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase