AU5847599A - Power semiconductor having a reduced reverse current - Google Patents
Power semiconductor having a reduced reverse currentInfo
- Publication number
- AU5847599A AU5847599A AU58475/99A AU5847599A AU5847599A AU 5847599 A AU5847599 A AU 5847599A AU 58475/99 A AU58475/99 A AU 58475/99A AU 5847599 A AU5847599 A AU 5847599A AU 5847599 A AU5847599 A AU 5847599A
- Authority
- AU
- Australia
- Prior art keywords
- power semiconductor
- reverse current
- reduced reverse
- reduced
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19834214 | 1998-07-29 | ||
DE19834214 | 1998-07-29 | ||
PCT/DE1999/002000 WO2000007245A1 (en) | 1998-07-29 | 1999-07-01 | Power semiconductor having a reduced reverse current |
Publications (1)
Publication Number | Publication Date |
---|---|
AU5847599A true AU5847599A (en) | 2000-02-21 |
Family
ID=7875751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU58475/99A Abandoned AU5847599A (en) | 1998-07-29 | 1999-07-01 | Power semiconductor having a reduced reverse current |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU5847599A (en) |
DE (1) | DE19981445B4 (en) |
WO (1) | WO2000007245A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10030381B4 (en) * | 2000-06-21 | 2005-04-14 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Power semiconductor device comprising a body of semiconductor material with transition between mutually opposite conductivity types |
DE10048437A1 (en) | 2000-09-29 | 2002-04-18 | Eupec Gmbh & Co Kg | Method for producing a body from semiconductor material with a reduced mean free path and body produced with the method |
DE102006006700B9 (en) * | 2006-02-13 | 2008-07-10 | Infineon Technologies Austria Ag | Semiconductor component, in particular power semiconductor component with charge carrier recombination zones and method for producing the same |
CN100459151C (en) * | 2007-01-26 | 2009-02-04 | 北京工业大学 | Insulation bar dual-pole transistor with the internal transparent collector |
GB2584698B (en) * | 2019-06-12 | 2022-09-14 | Mqsemi Ag | Non-punch-through reverse-conducting power semiconductor device and method for producing same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
EP0197948A4 (en) * | 1984-09-28 | 1988-01-07 | Motorola Inc | Charge storage depletion region discharge protection. |
GB2213988B (en) * | 1987-12-18 | 1992-02-05 | Matsushita Electric Works Ltd | Semiconductor device |
JPH07107935B2 (en) * | 1988-02-04 | 1995-11-15 | 株式会社東芝 | Semiconductor device |
DE4036222A1 (en) * | 1990-11-14 | 1992-05-21 | Bosch Gmbh Robert | METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS, IN PARTICULAR DIODES |
EP0556739B1 (en) * | 1992-02-20 | 1998-07-08 | Hitachi, Ltd. | Gate turn-off thyristor and power convertor using the same |
DE4223914C2 (en) * | 1992-06-30 | 1996-01-25 | Fraunhofer Ges Forschung | Method for producing a vertical power component with a reduced minority carrier lifetime in its drift path |
EP0931351B1 (en) * | 1996-09-30 | 2004-01-28 | EUPEC Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Thyristor with breakdown region |
-
1999
- 1999-07-01 AU AU58475/99A patent/AU5847599A/en not_active Abandoned
- 1999-07-01 WO PCT/DE1999/002000 patent/WO2000007245A1/en active Application Filing
- 1999-07-01 DE DE19981445T patent/DE19981445B4/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2000007245A1 (en) | 2000-02-10 |
DE19981445D2 (en) | 2001-02-22 |
DE19981445B4 (en) | 2005-09-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |