JP5204960B2 - 研磨用組成物及び研磨方法 - Google Patents
研磨用組成物及び研磨方法 Download PDFInfo
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- JP5204960B2 JP5204960B2 JP2006227614A JP2006227614A JP5204960B2 JP 5204960 B2 JP5204960 B2 JP 5204960B2 JP 2006227614 A JP2006227614 A JP 2006227614A JP 2006227614 A JP2006227614 A JP 2006227614A JP 5204960 B2 JP5204960 B2 JP 5204960B2
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- polishing
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- 238000005498 polishing Methods 0.000 title claims description 157
- 239000000203 mixture Substances 0.000 title claims description 84
- 238000000034 method Methods 0.000 title claims description 7
- 229920003169 water-soluble polymer Polymers 0.000 claims description 30
- 239000003513 alkali Substances 0.000 claims description 17
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 14
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 14
- 239000002738 chelating agent Substances 0.000 claims description 10
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 60
- 239000006061 abrasive grain Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000011164 primary particle Substances 0.000 description 15
- 239000008119 colloidal silica Substances 0.000 description 13
- 230000007547 defect Effects 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 239000002253 acid Substances 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 4
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 3
- 239000001768 carboxy methyl cellulose Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- GLUUGHFHXGJENI-UHFFFAOYSA-N diethylenediamine Natural products C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229960003330 pentetic acid Drugs 0.000 description 3
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 3
- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 description 3
- 229920001027 sodium carboxymethylcellulose Polymers 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- WDQLRUYAYXDIFW-RWKIJVEZSA-N (2r,3r,4s,5r,6r)-4-[(2s,3r,4s,5r,6r)-3,5-dihydroxy-4-[(2r,3r,4s,5s,6r)-3,4,5-trihydroxy-6-(hydroxymethyl)oxan-2-yl]oxy-6-[[(2r,3r,4s,5s,6r)-3,4,5-trihydroxy-6-(hydroxymethyl)oxan-2-yl]oxymethyl]oxan-2-yl]oxy-6-(hydroxymethyl)oxane-2,3,5-triol Chemical compound O[C@@H]1[C@@H](CO)O[C@@H](O)[C@H](O)[C@H]1O[C@H]1[C@H](O)[C@@H](O[C@H]2[C@@H]([C@@H](O)[C@H](O)[C@@H](CO)O2)O)[C@H](O)[C@@H](CO[C@H]2[C@@H]([C@@H](O)[C@H](O)[C@@H](CO)O2)O)O1 WDQLRUYAYXDIFW-RWKIJVEZSA-N 0.000 description 1
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229920002305 Schizophyllan Polymers 0.000 description 1
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical group CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229920003123 carboxymethyl cellulose sodium Polymers 0.000 description 1
- 229940063834 carboxymethylcellulose sodium Drugs 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical group [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 description 1
- 229940006186 sodium polystyrene sulfonate Drugs 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Description
請求項3に記載の発明は、キレート剤をさらに含有する請求項1又は2に記載の研磨用組成物を提供する。
本実施形態の研磨用組成物は、所定量の水溶性高分子とアルカリと砥粒を水と混合することにより製造される。従って、本実施形態の研磨用組成物は、水溶性高分子、アルカリ、砥粒及び水からなる。この研磨用組成物は、シリコンウエハ等の半導体ウエハを研磨する用途で使用されるものであり、特にウエハの予備研磨、予備研磨が二段階以上に分けて行われる場合には最終段階の予備研磨で使用されるものである。
・ 本実施形態の研磨用組成物は、ポリビニルピロリドン及びポリN−ビニルホルムアミドから選ばれる少なくとも一種類の水溶性高分子を含有しており、この水溶性高分子によりウエハ表面に形成される親水膜は、研磨加工に起因するLPDの数を低減する働きをする。そのため、本実施形態の研磨用組成物によれば、研磨用組成物を用いて研磨した後のウエハ表面における研磨加工に起因するLPDの数を低減することができる。
・ 前記実施形態の研磨用組成物はキレート剤をさらに含有してもよい。キレート剤は、研磨用組成物中の金属不純物と錯イオンを形成してこれを捕捉することにより、金属不純物による研磨対象物の汚染を抑制する働きをする。キレート剤は、アミノカルボン酸系キレート剤又はホスホン酸系キレート剤であってもよく、エチレンジアミン四酢酸、ジエチレントリアミン五酢酸、トリエチレンテトラミン六酢酸、エチレンジアミン四メチル燐酸、又はジエチレントリアミン五メチル燐酸を含むことが好ましい。エチレンジアミン四酢酸、ジエチレントリアミン五酢酸、トリエチレンテトラミン六酢酸、エチレンジアミン四メチル燐酸、及びジエチレントリアミン五メチル燐酸は、金属不純物を捕捉する能力が特に高い。
・ 前記実施形態の研磨用組成物は使用前に濃縮原液を希釈することによって調製されてもよい。
・ コロイダルシリカ及びフュームドシリカから選ばれる少なくとも一種類の砥粒をさらに含有する請求項1〜4のいずれか一項に記載の研磨用組成物。この場合、研磨用組成物による研磨対象物の研磨速度を向上させることができる。
Claims (4)
- ポリビニルピロリドン及びポリN−ビニルホルムアミドから選ばれる少なくとも一種類の水溶性高分子を0.0003〜0.1g/Lと、
アルカリと
を含有し、シリコンウエハの予備研磨に用いられることを特徴とする研磨用組成物。 - 前記水溶性高分子の重量平均分子量が6,000〜4,000,000である請求項1に記載の研磨用組成物。
- キレート剤をさらに含有する請求項1又は2に記載の研磨用組成物。
- 請求項1〜3のいずれか一項に記載の研磨用組成物を用いて半導体ウエハの表面を研磨することを特徴とする研磨方法。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006227614A JP5204960B2 (ja) | 2006-08-24 | 2006-08-24 | 研磨用組成物及び研磨方法 |
TW096128010A TWI412580B (zh) | 2006-08-24 | 2007-07-31 | Abrasive composition and a grinding method |
GB0716358A GB2443286B (en) | 2006-08-24 | 2007-08-22 | Polishing composition and polishing method |
US11/844,014 US7867909B2 (en) | 2006-08-24 | 2007-08-23 | Polishing composition and polishing method |
KR1020070084845A KR101250044B1 (ko) | 2006-08-24 | 2007-08-23 | 연마용 조성물 및 연마 방법 |
DE102007039910.5A DE102007039910B4 (de) | 2006-08-24 | 2007-08-23 | Polierverfahren |
CN2007101468555A CN101130668B (zh) | 2006-08-24 | 2007-08-24 | 抛光用组合物和抛光方法 |
US12/360,557 US20090137123A1 (en) | 2006-08-24 | 2009-01-27 | Polishing Composition and Polishing Method |
US13/368,694 US20120138851A1 (en) | 2006-08-24 | 2012-02-08 | Polishing composition and polishing method |
US13/655,594 US8721909B2 (en) | 2006-08-24 | 2012-10-19 | Polishing composition and polishing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006227614A JP5204960B2 (ja) | 2006-08-24 | 2006-08-24 | 研磨用組成物及び研磨方法 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012250463A Division JP5656960B2 (ja) | 2012-11-14 | 2012-11-14 | Lpd低減剤及びそれを用いたシリコンウエハの欠陥低減方法 |
JP2012250464A Division JP5460827B2 (ja) | 2012-11-14 | 2012-11-14 | シリコンウエハの製造方法 |
JP2012250462A Division JP2013034026A (ja) | 2012-11-14 | 2012-11-14 | 研磨用組成物及びそれを用いた半導体ウエハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008053415A JP2008053415A (ja) | 2008-03-06 |
JP5204960B2 true JP5204960B2 (ja) | 2013-06-05 |
Family
ID=38599067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006227614A Active JP5204960B2 (ja) | 2006-08-24 | 2006-08-24 | 研磨用組成物及び研磨方法 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7867909B2 (ja) |
JP (1) | JP5204960B2 (ja) |
KR (1) | KR101250044B1 (ja) |
CN (1) | CN101130668B (ja) |
DE (1) | DE102007039910B4 (ja) |
GB (1) | GB2443286B (ja) |
TW (1) | TWI412580B (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5204960B2 (ja) | 2006-08-24 | 2013-06-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
WO2010069149A1 (zh) * | 2008-12-19 | 2010-06-24 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
US20100159807A1 (en) * | 2008-12-22 | 2010-06-24 | Jinru Bian | Polymeric barrier removal polishing slurry |
TWI385244B (zh) * | 2009-05-20 | 2013-02-11 | Epoch Material Co Ltd | 用於移除鋸痕之化學機械研磨組合物 |
DE112010002227B4 (de) | 2009-06-05 | 2018-11-29 | Sumco Corp. | Verfahren zum Polieren eines Siliciumwafers |
JP2011171689A (ja) | 2009-07-07 | 2011-09-01 | Kao Corp | シリコンウエハ用研磨液組成物 |
JP4772156B1 (ja) * | 2010-07-05 | 2011-09-14 | 花王株式会社 | シリコンウエハ用研磨液組成物 |
JP5721505B2 (ja) * | 2011-04-01 | 2015-05-20 | ニッタ・ハース株式会社 | 研磨用組成物 |
CN103890114B (zh) | 2011-10-24 | 2015-08-26 | 福吉米株式会社 | 研磨用组合物、使用了其的研磨方法和基板的制造方法 |
JP6357296B2 (ja) | 2012-02-10 | 2018-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物、及び半導体基板の製造方法 |
JP5822356B2 (ja) | 2012-04-17 | 2015-11-24 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
JP5927059B2 (ja) * | 2012-06-19 | 2016-05-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた基板の製造方法 |
CN102786879B (zh) * | 2012-07-17 | 2014-04-23 | 清华大学 | 钛酸钡化学机械抛光水性组合物及其应用 |
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US20090137123A1 (en) | 2009-05-28 |
JP2008053415A (ja) | 2008-03-06 |
US20130040461A1 (en) | 2013-02-14 |
GB2443286B (en) | 2011-11-23 |
KR20080018823A (ko) | 2008-02-28 |
CN101130668B (zh) | 2012-10-31 |
KR101250044B1 (ko) | 2013-04-02 |
DE102007039910B4 (de) | 2017-02-09 |
US8721909B2 (en) | 2014-05-13 |
US7867909B2 (en) | 2011-01-11 |
TWI412580B (zh) | 2013-10-21 |
US20080051010A1 (en) | 2008-02-28 |
US20120138851A1 (en) | 2012-06-07 |
GB0716358D0 (en) | 2007-10-03 |
TW200813207A (en) | 2008-03-16 |
DE102007039910A1 (de) | 2008-03-27 |
CN101130668A (zh) | 2008-02-27 |
GB2443286A (en) | 2008-04-30 |
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