DE69127314D1 - Diamant-Halbleiteranordnung - Google Patents
Diamant-HalbleiteranordnungInfo
- Publication number
- DE69127314D1 DE69127314D1 DE69127314T DE69127314T DE69127314D1 DE 69127314 D1 DE69127314 D1 DE 69127314D1 DE 69127314 T DE69127314 T DE 69127314T DE 69127314 T DE69127314 T DE 69127314T DE 69127314 D1 DE69127314 D1 DE 69127314D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- diamond semiconductor
- diamond
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910003460 diamond Inorganic materials 0.000 title 1
- 239000010432 diamond Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6603—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2128563A JP2961812B2 (ja) | 1990-05-17 | 1990-05-17 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69127314D1 true DE69127314D1 (de) | 1997-09-25 |
DE69127314T2 DE69127314T2 (de) | 1997-12-18 |
Family
ID=14987859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69127314T Expired - Fee Related DE69127314T2 (de) | 1990-05-17 | 1991-05-10 | Diamant-Halbleiteranordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5252840A (de) |
EP (1) | EP0457508B1 (de) |
JP (1) | JP2961812B2 (de) |
DE (1) | DE69127314T2 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04302172A (ja) * | 1991-03-29 | 1992-10-26 | Kobe Steel Ltd | ダイヤモンドショットキーダイオード |
US5371382A (en) * | 1992-04-27 | 1994-12-06 | Kobe Steel Usa, Inc. | Amorphous silicon rectifying contact on diamond and method for making same |
US5362975A (en) * | 1992-09-02 | 1994-11-08 | Kobe Steel Usa | Diamond-based chemical sensors |
US5285084A (en) * | 1992-09-02 | 1994-02-08 | Kobe Steel Usa | Diamond schottky diodes and gas sensors fabricated therefrom |
US5382812A (en) * | 1993-04-14 | 1995-01-17 | Kobe Development Corporation | Diamond and II-VI heterojunction semiconductor light emitting device |
DE4322650A1 (de) * | 1993-07-07 | 1995-01-12 | Siemens Ag | Temperatursensor mit einem p-n-Übergang |
JP4071833B2 (ja) * | 1993-09-10 | 2008-04-02 | 住友電気工業株式会社 | ダイヤモンド半導体デバイス |
JP3563093B2 (ja) * | 1993-09-24 | 2004-09-08 | 住友電気工業株式会社 | 半導体装置 |
JPH07161455A (ja) * | 1993-12-09 | 1995-06-23 | Sumitomo Electric Ind Ltd | ダイヤモンドヒ−タ |
US5536953A (en) * | 1994-03-08 | 1996-07-16 | Kobe Steel Usa | Wide bandgap semiconductor device including lightly doped active region |
JPH07283434A (ja) * | 1994-04-07 | 1995-10-27 | Kobe Steel Ltd | ダイヤモンド発光素子 |
DE4415600A1 (de) * | 1994-05-04 | 1995-11-30 | Daimler Benz Ag | Elektronisches Bauteil mit einer Halbleiter-Komposit-Struktur |
DE4415601C2 (de) * | 1994-05-04 | 1997-12-18 | Daimler Benz Ag | Komposit-Struktur für elektronische Bauteile und Verfahren zu deren Herstellung |
DE69529712T2 (de) * | 1994-08-03 | 2003-10-23 | Sumitomo Electric Industries | Kühlkörper aus synthetischer Diamantschicht |
DE4427715C1 (de) * | 1994-08-05 | 1996-02-08 | Daimler Benz Ag | Komposit-Struktur mit auf einer Diamantschicht und/oder einer diamantähnlichen Schicht angeordneter Halbleiterschicht sowie ein Verfahren zu deren Herstellung |
JP3436278B2 (ja) * | 1994-09-16 | 2003-08-11 | 住友電気工業株式会社 | 電界効果トランジスタ |
US5592053A (en) * | 1994-12-06 | 1997-01-07 | Kobe Steel Usa, Inc. | Diamond target electron beam device |
DE19514546C2 (de) * | 1995-04-20 | 2000-11-09 | Daimler Chrysler Ag | Elektronisches Bauteil mit einer Komposit-Struktur |
DE19738512A1 (de) * | 1997-09-03 | 1999-02-18 | Daimler Benz Ag | Diamantschicht eines mikroelektronischen Bauteils und Verfahren zu deren Herstellung |
US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
US6858080B2 (en) * | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
KR20060122868A (ko) * | 2003-11-25 | 2006-11-30 | 스미토모덴키고교가부시키가이샤 | 다이아몬드 n형 반도체, 그의 제조 방법, 반도체 소자 및전자 방출 소자 |
DE102004006544B3 (de) * | 2004-02-10 | 2005-09-08 | Infineon Technologies Ag | Verfahren zur Abscheidung eines leitfähigen Kohlenstoffmaterials auf einem Halbleiter zur Ausbildung eines Schottky-Kontaktes und Halbleiterkontaktvorrichtung |
WO2005080645A2 (en) * | 2004-02-13 | 2005-09-01 | Apollo Diamond, Inc. | Diamond structure separation |
WO2006013430A1 (en) * | 2004-07-27 | 2006-02-09 | Element Six Limited | Diamond electrodes |
KR100636349B1 (ko) * | 2004-09-24 | 2006-10-19 | 엘지전자 주식회사 | 마이크로렌즈 배열 시트 및 그 제작방법 |
US20060163584A1 (en) * | 2005-01-26 | 2006-07-27 | Robert Linares | Boron-doped diamond semiconductor |
DE102005028216A1 (de) | 2005-06-17 | 2006-12-28 | Siemens Ag | Vorrichtung und Verfahren für die Computertomographie |
JP4858948B2 (ja) * | 2006-01-17 | 2012-01-18 | 独立行政法人産業技術総合研究所 | 不純物傾斜型ダイヤモンド薄膜及びその製造方法並びに該不純物傾斜型ダイヤモンド薄膜を用いたダイオード又はトランジスタ |
US8030637B2 (en) | 2006-08-25 | 2011-10-04 | Qimonda Ag | Memory element using reversible switching between SP2 and SP3 hybridized carbon |
US20080102278A1 (en) | 2006-10-27 | 2008-05-01 | Franz Kreupl | Carbon filament memory and method for fabrication |
US7915603B2 (en) | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
US20090050899A1 (en) * | 2007-08-23 | 2009-02-26 | National Institute of Advanced Industrial Scinece and Technology | High-output diamond semiconductor element |
JP2009059798A (ja) * | 2007-08-30 | 2009-03-19 | Sumitomo Electric Ind Ltd | ダイヤモンド電子素子の製造方法 |
US7768016B2 (en) | 2008-02-11 | 2010-08-03 | Qimonda Ag | Carbon diode array for resistivity changing memories |
JP2009200343A (ja) * | 2008-02-22 | 2009-09-03 | Sumitomo Electric Ind Ltd | ダイヤモンド電子素子 |
US7989261B2 (en) * | 2008-12-22 | 2011-08-02 | Raytheon Company | Fabricating a gallium nitride device with a diamond layer |
US7888171B2 (en) * | 2008-12-22 | 2011-02-15 | Raytheon Company | Fabricating a gallium nitride layer with diamond layers |
US7892881B2 (en) * | 2009-02-23 | 2011-02-22 | Raytheon Company | Fabricating a device with a diamond layer |
JP6444718B2 (ja) * | 2014-12-15 | 2018-12-26 | 株式会社東芝 | 半導体装置 |
DE102021123907A1 (de) | 2021-09-15 | 2023-03-16 | Universität Siegen, Körperschaft des öffentlichen Rechts | LED und Herstellungsverfahren dafür |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57121288A (en) * | 1981-01-20 | 1982-07-28 | Sanyo Electric Co Ltd | Hall element |
JPS58141572A (ja) * | 1982-02-18 | 1983-08-22 | Seiko Epson Corp | 半導体装置 |
JPS59208821A (ja) * | 1983-05-13 | 1984-11-27 | Sumitomo Electric Ind Ltd | 気相合成によるダイヤモンド半導体およびその製造方法 |
JPS59213126A (ja) * | 1983-05-19 | 1984-12-03 | Sumitomo Electric Ind Ltd | ダイヤモンド半導体素子の製造法 |
JP2614868B2 (ja) * | 1987-09-09 | 1997-05-28 | 導電性無機化合物技術研究組合 | 電界効果トランジスタの製造法 |
US4929986A (en) * | 1987-09-25 | 1990-05-29 | The United States Of America As Represented By The Secretary Of The Navy | High power diamond traveling wave amplifier |
US5006914A (en) * | 1988-12-02 | 1991-04-09 | Advanced Technology Materials, Inc. | Single crystal semiconductor substrate articles and semiconductor devices comprising same |
JPH02260470A (ja) * | 1989-03-30 | 1990-10-23 | Sumitomo Electric Ind Ltd | 発光素子 |
JP2730271B2 (ja) * | 1990-03-07 | 1998-03-25 | 住友電気工業株式会社 | 半導体装置 |
JP2813023B2 (ja) * | 1990-03-13 | 1998-10-22 | 株式会社神戸製鋼所 | Mis型ダイヤモンド電界効果トランジスタ |
-
1990
- 1990-05-17 JP JP2128563A patent/JP2961812B2/ja not_active Expired - Lifetime
-
1991
- 1991-05-09 US US07/697,438 patent/US5252840A/en not_active Expired - Lifetime
- 1991-05-10 DE DE69127314T patent/DE69127314T2/de not_active Expired - Fee Related
- 1991-05-10 EP EP91304212A patent/EP0457508B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0457508A3 (en) | 1992-03-25 |
EP0457508A2 (de) | 1991-11-21 |
JPH0422172A (ja) | 1992-01-27 |
JP2961812B2 (ja) | 1999-10-12 |
US5252840A (en) | 1993-10-12 |
DE69127314T2 (de) | 1997-12-18 |
EP0457508B1 (de) | 1997-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP |
|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: WESER & KOLLEGEN, 81245 MUENCHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |