FR2373162A1 - Dispositif a semi-conducteurs - Google Patents

Dispositif a semi-conducteurs

Info

Publication number
FR2373162A1
FR2373162A1 FR7736188A FR7736188A FR2373162A1 FR 2373162 A1 FR2373162 A1 FR 2373162A1 FR 7736188 A FR7736188 A FR 7736188A FR 7736188 A FR7736188 A FR 7736188A FR 2373162 A1 FR2373162 A1 FR 2373162A1
Authority
FR
France
Prior art keywords
semiconductor device
regions
cross
semiconductor
pnpn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7736188A
Other languages
English (en)
Other versions
FR2373162B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2373162A1 publication Critical patent/FR2373162A1/fr
Application granted granted Critical
Publication of FR2373162B1 publication Critical patent/FR2373162B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/735—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Abstract

L'invention concerne un dispositif à semi-conducteurs. Un commutateur à points de croisement PNPN, à semi-conducteurs, comporte une multiplicité de points de croisement qui sont formés chacun de quatre régions de types de conductivité alternants dans un substrat semi-conducteur. Un faible courant de fuite s'obtient par un choix convenable de l'épaisseur des régions du semi-conducteur et par un dopage à l'or approprié de celui-ci. L'invention s'applique aux commutateurs téléphoniques.
FR7736188A 1976-12-03 1977-11-30 Dispositif a semi-conducteurs Granted FR2373162A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/747,366 US4130827A (en) 1976-12-03 1976-12-03 Integrated circuit switching network using low substrate leakage current thyristor construction

Publications (2)

Publication Number Publication Date
FR2373162A1 true FR2373162A1 (fr) 1978-06-30
FR2373162B1 FR2373162B1 (fr) 1982-04-23

Family

ID=25004764

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7736188A Granted FR2373162A1 (fr) 1976-12-03 1977-11-30 Dispositif a semi-conducteurs

Country Status (10)

Country Link
US (1) US4130827A (fr)
JP (1) JPS5948556B2 (fr)
BE (1) BE861272A (fr)
CA (1) CA1095184A (fr)
DE (1) DE2753320C2 (fr)
ES (1) ES464707A1 (fr)
FR (1) FR2373162A1 (fr)
GB (1) GB1572379A (fr)
NL (1) NL7713078A (fr)
SE (1) SE434446B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462028A1 (fr) * 1979-07-17 1981-02-06 Thomson Csf Structure de thyristor pour circuit integre et son procede de fabrication
DE2942777A1 (de) * 1979-10-23 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Matrix-anordnung bistabiler schaltelemente
CA1145057A (fr) * 1979-12-28 1983-04-19 Adrian R. Hartman Commutateur a semiconducteur pour hautes tensions
JPS5792860A (en) * 1980-12-01 1982-06-09 Hitachi Ltd Manufacture of semiconductor integrated circuit device
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US5066869A (en) * 1990-04-09 1991-11-19 Unitrode Corporation Reset circuit with PNP saturation detector
GB2261795A (en) * 1991-11-22 1993-05-26 Motorola Israel Ltd Signal routing
US5793126A (en) * 1995-11-29 1998-08-11 Elantec, Inc. Power control chip with circuitry that isolates switching elements and bond wires for testing
US6137142A (en) * 1998-02-24 2000-10-24 Sun Microsystems, Inc. MOS device structure and method for reducing PN junction leakage
TWI506776B (zh) * 2013-08-14 2015-11-01 Macronix Int Co Ltd 半導體裝置及其製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073551A (en) * 1964-07-02 1967-06-28 Westinghouse Electric Corp Integrated circuit comprising a diode and method of making the same
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
JPS5019437B1 (fr) * 1970-06-08 1975-07-07
US3872493A (en) * 1972-08-25 1975-03-18 Westinghouse Electric Corp Selective irradiation of junctioned semiconductor devices
US3786425A (en) * 1972-12-18 1974-01-15 Bell Telephone Labor Inc Integrated circuit switching network providing crosspoint gain

Also Published As

Publication number Publication date
BE861272A (fr) 1978-03-16
GB1572379A (en) 1980-07-30
DE2753320A1 (de) 1978-06-08
DE2753320C2 (de) 1984-08-30
ES464707A1 (es) 1978-07-01
SE434446B (sv) 1984-07-23
US4130827A (en) 1978-12-19
JPS5370684A (en) 1978-06-23
SE7713184L (sv) 1978-06-04
FR2373162B1 (fr) 1982-04-23
CA1095184A (fr) 1981-02-03
JPS5948556B2 (ja) 1984-11-27
NL7713078A (nl) 1978-06-06

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Legal Events

Date Code Title Description
ST Notification of lapse