SE434446B - Halvledaranordning med lag leckstrom - Google Patents
Halvledaranordning med lag leckstromInfo
- Publication number
- SE434446B SE434446B SE7713184A SE7713184A SE434446B SE 434446 B SE434446 B SE 434446B SE 7713184 A SE7713184 A SE 7713184A SE 7713184 A SE7713184 A SE 7713184A SE 434446 B SE434446 B SE 434446B
- Authority
- SE
- Sweden
- Prior art keywords
- region
- substrate
- area
- charge carriers
- recombination
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 51
- 239000002800 charge carrier Substances 0.000 claims description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 24
- 238000005215 recombination Methods 0.000 claims description 22
- 230000006798 recombination Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- WYUYEJNGHIOFOC-VVTVMFAVSA-N 2-[(z)-1-(4-methylphenyl)-3-pyrrolidin-1-ylprop-1-enyl]pyridine;hydrochloride Chemical compound Cl.C1=CC(C)=CC=C1C(\C=1N=CC=CC=1)=C\CN1CCCC1 WYUYEJNGHIOFOC-VVTVMFAVSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 18
- 239000010931 gold Substances 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 244000045947 parasite Species 0.000 description 2
- 235000005747 Carum carvi Nutrition 0.000 description 1
- 240000000467 Carum carvi Species 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000004899 c-terminal region Anatomy 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1027—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/735—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electronic Switches (AREA)
- Element Separation (AREA)
- Power Conversion In General (AREA)
- Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
- Interface Circuits In Exchanges (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/747,366 US4130827A (en) | 1976-12-03 | 1976-12-03 | Integrated circuit switching network using low substrate leakage current thyristor construction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7713184L SE7713184L (sv) | 1978-06-04 |
| SE434446B true SE434446B (sv) | 1984-07-23 |
Family
ID=25004764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7713184A SE434446B (sv) | 1976-12-03 | 1977-11-22 | Halvledaranordning med lag leckstrom |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4130827A (fr) |
| JP (1) | JPS5948556B2 (fr) |
| BE (1) | BE861272A (fr) |
| CA (1) | CA1095184A (fr) |
| DE (1) | DE2753320C2 (fr) |
| ES (1) | ES464707A1 (fr) |
| FR (1) | FR2373162A1 (fr) |
| GB (1) | GB1572379A (fr) |
| NL (1) | NL7713078A (fr) |
| SE (1) | SE434446B (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2462028A1 (fr) * | 1979-07-17 | 1981-02-06 | Thomson Csf | Structure de thyristor pour circuit integre et son procede de fabrication |
| DE2942777A1 (de) * | 1979-10-23 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Matrix-anordnung bistabiler schaltelemente |
| CA1145057A (fr) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | Commutateur a semiconducteur pour hautes tensions |
| JPS5792860A (en) * | 1980-12-01 | 1982-06-09 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
| US4467344A (en) * | 1981-12-23 | 1984-08-21 | At&T Bell Telephone Laboratories, Incorporated | Bidirectional switch using two gated diode switches in a single dielectrically isolated tub |
| US5066869A (en) * | 1990-04-09 | 1991-11-19 | Unitrode Corporation | Reset circuit with PNP saturation detector |
| GB2261795A (en) * | 1991-11-22 | 1993-05-26 | Motorola Israel Ltd | Signal routing |
| US5793126A (en) * | 1995-11-29 | 1998-08-11 | Elantec, Inc. | Power control chip with circuitry that isolates switching elements and bond wires for testing |
| US6137142A (en) * | 1998-02-24 | 2000-10-24 | Sun Microsystems, Inc. | MOS device structure and method for reducing PN junction leakage |
| TWI506776B (zh) * | 2013-08-14 | 2015-11-01 | Macronix Int Co Ltd | 半導體裝置及其製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1073551A (en) * | 1964-07-02 | 1967-06-28 | Westinghouse Electric Corp | Integrated circuit comprising a diode and method of making the same |
| US3640783A (en) * | 1969-08-11 | 1972-02-08 | Trw Semiconductors Inc | Semiconductor devices with diffused platinum |
| JPS5019437B1 (fr) * | 1970-06-08 | 1975-07-07 | ||
| US3872493A (en) * | 1972-08-25 | 1975-03-18 | Westinghouse Electric Corp | Selective irradiation of junctioned semiconductor devices |
| US3786425A (en) * | 1972-12-18 | 1974-01-15 | Bell Telephone Labor Inc | Integrated circuit switching network providing crosspoint gain |
-
1976
- 1976-12-03 US US05/747,366 patent/US4130827A/en not_active Expired - Lifetime
-
1977
- 1977-10-26 CA CA289,611A patent/CA1095184A/fr not_active Expired
- 1977-11-22 SE SE7713184A patent/SE434446B/sv not_active IP Right Cessation
- 1977-11-28 NL NL7713078A patent/NL7713078A/xx not_active Application Discontinuation
- 1977-11-28 BE BE182983A patent/BE861272A/fr not_active IP Right Cessation
- 1977-11-30 DE DE2753320A patent/DE2753320C2/de not_active Expired
- 1977-11-30 FR FR7736188A patent/FR2373162A1/fr active Granted
- 1977-12-01 GB GB50030/77A patent/GB1572379A/en not_active Expired
- 1977-12-02 ES ES464707A patent/ES464707A1/es not_active Expired
- 1977-12-03 JP JP52144641A patent/JPS5948556B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2373162B1 (fr) | 1982-04-23 |
| BE861272A (fr) | 1978-03-16 |
| JPS5948556B2 (ja) | 1984-11-27 |
| CA1095184A (fr) | 1981-02-03 |
| JPS5370684A (en) | 1978-06-23 |
| SE7713184L (sv) | 1978-06-04 |
| DE2753320A1 (de) | 1978-06-08 |
| DE2753320C2 (de) | 1984-08-30 |
| GB1572379A (en) | 1980-07-30 |
| NL7713078A (nl) | 1978-06-06 |
| US4130827A (en) | 1978-12-19 |
| FR2373162A1 (fr) | 1978-06-30 |
| ES464707A1 (es) | 1978-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 7713184-5 Effective date: 19880322 Format of ref document f/p: F |