ES464707A1 - Perfeccionamientos en dispositivos semiconductores. - Google Patents

Perfeccionamientos en dispositivos semiconductores.

Info

Publication number
ES464707A1
ES464707A1 ES464707A ES464707A ES464707A1 ES 464707 A1 ES464707 A1 ES 464707A1 ES 464707 A ES464707 A ES 464707A ES 464707 A ES464707 A ES 464707A ES 464707 A1 ES464707 A1 ES 464707A1
Authority
ES
Spain
Prior art keywords
integrated circuit
leakage current
switching network
circuit switching
low substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES464707A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES464707A1 publication Critical patent/ES464707A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/735—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)
  • Element Separation (AREA)
  • Power Conversion In General (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Interface Circuits In Exchanges (AREA)

Abstract

Perfeccionamientos en dispositivo semiconductores del tipo de dispositivos que comprende: un material semiconductor que comprende una parte principal y una parte superior que son ambas de un primer tipo de conductividad; una primera región contenida dentro de zonas de la parte principal y la parte superior del material semiconductorteniendo la primera región una parte que atraviesa completamente la parte superior del material semiconductor para aislar completamente una parte o zona de dicha parte superior.
ES464707A 1976-12-03 1977-12-02 Perfeccionamientos en dispositivos semiconductores. Expired ES464707A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/747,366 US4130827A (en) 1976-12-03 1976-12-03 Integrated circuit switching network using low substrate leakage current thyristor construction

Publications (1)

Publication Number Publication Date
ES464707A1 true ES464707A1 (es) 1978-07-01

Family

ID=25004764

Family Applications (1)

Application Number Title Priority Date Filing Date
ES464707A Expired ES464707A1 (es) 1976-12-03 1977-12-02 Perfeccionamientos en dispositivos semiconductores.

Country Status (10)

Country Link
US (1) US4130827A (es)
JP (1) JPS5948556B2 (es)
BE (1) BE861272A (es)
CA (1) CA1095184A (es)
DE (1) DE2753320C2 (es)
ES (1) ES464707A1 (es)
FR (1) FR2373162A1 (es)
GB (1) GB1572379A (es)
NL (1) NL7713078A (es)
SE (1) SE434446B (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462028A1 (fr) * 1979-07-17 1981-02-06 Thomson Csf Structure de thyristor pour circuit integre et son procede de fabrication
DE2942777A1 (de) * 1979-10-23 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Matrix-anordnung bistabiler schaltelemente
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
JPS5792860A (en) * 1980-12-01 1982-06-09 Hitachi Ltd Manufacture of semiconductor integrated circuit device
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US5066869A (en) * 1990-04-09 1991-11-19 Unitrode Corporation Reset circuit with PNP saturation detector
GB2261795A (en) * 1991-11-22 1993-05-26 Motorola Israel Ltd Signal routing
US5793126A (en) * 1995-11-29 1998-08-11 Elantec, Inc. Power control chip with circuitry that isolates switching elements and bond wires for testing
US6137142A (en) * 1998-02-24 2000-10-24 Sun Microsystems, Inc. MOS device structure and method for reducing PN junction leakage
TWI506776B (zh) * 2013-08-14 2015-11-01 Macronix Int Co Ltd 半導體裝置及其製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073551A (en) * 1964-07-02 1967-06-28 Westinghouse Electric Corp Integrated circuit comprising a diode and method of making the same
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
JPS5019437B1 (es) * 1970-06-08 1975-07-07
US3872493A (en) * 1972-08-25 1975-03-18 Westinghouse Electric Corp Selective irradiation of junctioned semiconductor devices
US3786425A (en) * 1972-12-18 1974-01-15 Bell Telephone Labor Inc Integrated circuit switching network providing crosspoint gain

Also Published As

Publication number Publication date
FR2373162A1 (fr) 1978-06-30
SE7713184L (sv) 1978-06-04
JPS5370684A (en) 1978-06-23
GB1572379A (en) 1980-07-30
DE2753320A1 (de) 1978-06-08
DE2753320C2 (de) 1984-08-30
NL7713078A (nl) 1978-06-06
FR2373162B1 (es) 1982-04-23
BE861272A (fr) 1978-03-16
CA1095184A (en) 1981-02-03
US4130827A (en) 1978-12-19
SE434446B (sv) 1984-07-23
JPS5948556B2 (ja) 1984-11-27

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19990503